E 1220 DIODE Search Results

Contextual Info: P ^p jlG E C P L E S S E Y DS3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP The introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs CW Gunn diodes further into the millimetre wave frequency

DC1277

Abstract: DC1279F-T DC1276 DC1270 Gunn Diode e band DC1277G-T DC1278F DC1279C DC1279F 018ph diode
Contextual Info: 37bâ£22 DOlflS'îO TSD « P L S B Si GEC P L E S S E Y S E M I C O N D U C T O R S D S3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP Tha introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs

07241

Abstract: kaab R30E12B R30E16A kaab 200 3B30A
Contextual Info: INT E R N A T IONAL RECTIFI ER IO R 73 D 1 4055455 D00723Ö T 1 Data Sheet No. PD-2.152 in t e r n a t io n a l r e c t if ie r R30E SERIES 1800-1200 VOLTS RANGE 1220 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS PART NUMBER VRRM» VR - V]

10bit DAC 10V output

Abstract: DAC102X BIT 3713 AD7521 LM741 10bit DAC 15V output DAC1021 DAC1220 Application Notes DAC1222 LF351 OPERATIONAL AMPLIFIER
Contextual Info: S e m i c o n d u c t o r DAC 1020/D AC 1021 /D A C 1022 10-Bit Binary Multiplying D /A Converter DAC 1220/D AC1222 12-Bit Binary Multiplying D /A Converter General Description The DAC1020 and the DAC1220 are, respectively, 10 and 12-bit binary multiplying digital-to-analog converters. A de­

DAC102X

Abstract: DAC122X GD743 DAC1020 DAC1222 AD7520 AD7530 AD7533 DAC1021 National Semiconductor dac1221lcn
Contextual Info: DAC1020/DAC1021/DAC1022/DAC1220/DAC1221/DAC1222 SÔE D . . S3! • h S G 1 1 2 4 D D 7 M 3 3 2 bbb « N S C 5 NATI . National S F M IC O N D L IN E A R s e m ic o n d u c t o r u DAC 1020/DAC1021/D A C 1022 10-Bi t Binary Multiplying D /A Converter DAC 1220/D A C 1221 / DAC 1222

e 1220 diode

Contextual Info: SBH 1220 . SBH 1245 -2 Axial lead diode High temperature schottky barrier diodes SBH 1220 . SBH 1245 Forward Current: 12 A Reverse Voltage: 20 to 45 V    !"#$ Mechanical Data       %&"  '&%   * +   ,&" +  -        

e 1220 diode

Abstract: 4E diode
Contextual Info: SB 1220 . SB 12100 -2 Axial lead diode Schottky barrier rectifiers diodes SB 1220 . SB 12100 ;  <  3  <  < + 0+  3  <  < +   <    < 2  0? , 0? ,@ 0? ," 0? ,"% 0? ,% 0? , 0? ,! #; #  @ " "% %  ! #;0

SCHOTTKY semikron

Abstract: sbh1240 1220
Contextual Info: SBH 1220 . SBH 1240 -2 Axial lead diode High temperature schottky barrier diodes SBH 1220 . SBH 1240 Forward Current: 12 A Reverse Voltage: 20 to 40 V Features                    !"#$ Mechanical Data       %&"  '&% 

42r2

Abstract: RC snubber circuit BYW 62 Thomson-CSF 22R2 RP 8040 X ku1010 BYW88-600 BYW88-800 RP4040 g4010
Contextual Info: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■f sm vF (A) (V) / iF 10 m s max 6 A * / Tease = 125°C G 506,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R) G 1206, (R)

DIODE REDRESSEMENT 4040

Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Contextual Info: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)

DIODE REDRESSEMENT

Abstract: JAF-1-40 Diodes de redressement BYT 12 DIODE J-RFV-2-05 J-RFV-2-15 J-RFV-3-05 J-RFV-3-15 J-RFV-7-05 J-RFV-7-10
Contextual Info: G S-THQ M SQ N S ÌC D | V OGOaOET fl 7 ^ 2 3 7 THOMSON-CSF C H IP S u ltra-fast recovery rectifier chips pastilles de diodes de redressement ultra-rapide Types >0 A v R flU Vf # ' f = «o m u. *FSU 10 IT* (V) (A) 'R 'V fW M 25*C max. (jlA) V r* OifW lPOOÎ

diode RP 4040

Abstract: diode RP 6040 DIODE REDRESSEMENT 4040 DIODE REDRESSEMENT RP 8040 X diode RP 6020 ic 4040 RC snubber circuit ku1010 RP 1240 M
Contextual Info: o THOMSON-CSF rectifier diode > 100A selector guide guide de sélection diodes de redressement ^ 100 A 143 new standard single phase all diodes metal stacks nouveaux ponts métalliques standards monophasés tout diodes IHOMSON-CSF T ype A v e ra g e o u tp u t

CMOS VOLTAGE CONVERTERS

Abstract: TC1219 KSS oscillator 1N4148 1N5817 TC1219ECH TC1220 TC1220ECH MARKING WR sot
Contextual Info: w~ r Semiconductor, ¡eluomInc. „ _ Ä TC1219 TC1220 SWITCHED CAPACITOR VOLTAGE CONVERTERS WITH SHUTDOWN IN SOT PACKAGES FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC1219/1220 are CMOS “charge-pump” voltage converters in ultra-small SOT-23A-6 packages. They invert

Shindengen sh

Abstract: marking code PHII D1FJ10 BS 531 shindengen m Schottky Diode Marking UX Shindengen sh 579 Shindengen sh 579 ja
Contextual Info: SCHOTTKY 1. Absolute Maximum Ratings Item T l= BARRIER DIODE SPECIFICATION 2 5°C unless otherwise sp ecifie d Conditions Symbol Operating junction Temperature Max reverse voltage V Average r e c tifie d Forward current I 0 5 OHz Sine wave, Resistance load

42R2

Abstract: Thomson-CSF 22R2 62R2 All diodes KU 506 BYW 70 RP 8040 X BYW88-100 FR58A C1-200
Contextual Info: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

TC1219

Contextual Info: Semiconductor, Inc. TC1219 TC1220 SWITCHED CAPACITOR VOLTAGE CONVERTERS WITH SHUTDOWN IN SOT PACKAGES FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC1219/1220 are CMOS “charge-pump” voltage converters in ultra-small SOT-23A-6 packages. They invert

TC1219

Contextual Info: Semiconductor, Inc. TC1219 TC1220 SWITCHED CAPACITOR VOLTAGE CONVERTERS WITH SHUTDOWN IN SOT PACKAGES FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC1219/1220 are CMOS “charge-pump” voltage converters in ultra-small SOT-23A-6 packages. They invert

TC1219

Contextual Info: Semiconductor, Inc. TC1219 TC1220 SWITCHED CAPACITOR VOLTAGE CONVERTERS WITH SHUTDOWN IN SOT PACKAGES FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ ■ The TC1219/1220 are CMOS “charge-pump” voltage converters in ultra-small 6-Pin SOT-23A packages. They

Contextual Info: G S-THQ M SQ N S ÌC D | OGOaOET fl 7 ^ 2 3 7 V THOMSON-CSF C H IP S u ltra-fast recovery rectifier chips pastilles de diodes de redressement ultra-rapide Types >0 A v R flU Vf # ' f = «o m u. *FSU 10 IT* (V) (A) 'R 'V fW M 25*C max. (jlA) V r* OifW lPOOÎ

e 1220 diode

Abstract: TC1219
Contextual Info: W Semiconductor, Inc. TC 1219 SWITCHED CAPACITOR VOLTAGE CONVERTERS WITH SHUTDOWN IN SOT PACKAGES FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC1219/1220 are CMOS “charge-pump” voltage

Contextual Info: TOSHIBA TMP88CP77/S77 Under Development CMOS 8-Bit Microcontroller TMP88CP77F, TMP88CS77F The TMP88CP77 and TMP88CS77 are the high speed and high performance 8-bit single chip microcomputers. These MCU contain VFT Vacuum Fluorescent Tube driver, serial interface, 8-bit AD converter and multi­

RC snubber circuit

Abstract: KU 1004 KU1504R ku 1008 m RP 8040 X 1200C SV2012R KU 1002 M KU 1006
Contextual Info: rectifier diodes > 100 A diodes de redressement^ 100 A Types •o Vrrm ■f s m 10 ms Vf A (V) (A ) <V) THOMSON-CSF / If Ir max (A ) (m A) (°C> 20 175 ' Case Ti max 100 A / Tease = 140°C SV SV SV SV SV SV 1016 R 1018 R 1020 R 1022 R 1024 R 1025 R 1002,

kd 617

Abstract: APD400 AP4156 AMERICAN POWER DEVICES transistor KD 617 AP5179 APD200 AP4157 APD300 diode for clippers
Contextual Info: AMERICAN POWER DEVICES S'lE D 0 7 37 1 3 5 OGOOObfcj b ib H A P D 7 -"//-o <9 APD200, APD300, APD400 AP4156 - AP4157, AP5179 american S E M IC O N D U C T O R S p o w e r d e v ic e s , In c . Stabistor diodes — high speed, multi-pellet general purpose FEATURES

1000c

Abstract: ku 1008 m RP 1240 M RP 8040 X KU 1002 M KU1008 g4010 KU2412 triphase ku1010
Contextual Info: new standard three phase all diodes metal stacks iÿi nouveaux ponts standards métalliques triphasés tout diodes th o m so n -csf A v e rag e ou tp u t cu rre n t Courant moyen tie sortie Type Ta m b = *0°C A GDD GDD GDD GDD GDD GDD 20 20 20 20 20 20