E 30 Search Results

Contextual Info: 10 VIEW ON MATING SIDE ROW E D C B A 1 2 3 E E E E E E E E E E E E E E E 4 5 E E E E E E E E E E 6 7 8 9 10 11 12 13 E E E E E E E E E E E E E E E 61 62 E E E E E E E E E E L1 E 8.00 E E E E E E E E E E E E E E E E E E E E 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Í3 44 45 46 41 48 49 50 51

Contextual Info: 2 A 3 5 4 6 X 7 Kontakt-Typ _ * □ r pin-type A B L Lochbild (board drillings) VZ D E F H K * * A 5< o o < TT C 5 <=a. Qj LO cvj <T3 i *"0 y Kontaktbelegung A contact loading x I E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E i 32 30 31

Contextual Info: X Kontaktanordnung contact arrangement 32 Tj o, S 28 30 i 24 26 i El El E E El El El E El El El E 20 22 i E E E E E E 16 18 i E E E E E E 12 14 i E E E E E E 48 E i n p r e s s K o n t a k t e 68 press- i n contacts 8 10 i E E E E E E 2 : 1 4 6 i E E E

Contextual Info: X 32 Tj 30 i 28 26 i Kontaktanordnung 32 E i n p r e s s K o n t a k t e c o n t a c t a r ra n g e m e n t 32 p r e s s - i n c o n t a c t s 24 22 i 20 16 18 i 14 i 12 El El E E E E E E E E E El El E E E E E E E E E o, □ □ □ □ □ □ □ □ □ □ □

Contextual Info: I Maximum Ratings $ f Ite m S ym bol U n it PW B60A20 R e p e titiv e P e a k R e v e rs e V o lta g e •’ . V r RmH ; V 200 300 400 N o n -R e p e titiv e P e a k R e v e rs e V oltag e ", V r s u ,;.'. V 240 360 480 V drm ■ - V 200 300 400 R e p e titiv e P e a k O lf-S ta te V oltag e

Contextual Info: i 'A I WHITE /MICROELECTRONICS 128Kx8 SRAM p r e lim in a r y WPS128K8-XEJX * PLASTIC PLUS FEATURES EVOLUTIONARY PINOUT TO P VIEW NC E E 1 ^ A 14E 3 30 □ CS2 E A7E A6 E A5 E A4 E A3 E A2 E A1 E AO E i/oo E 1/01 E I/0 2 E Vss E 4 29 H W E 5 28 H A13 6

Contextual Info: REV. D L ±.062 1.6 PART NO. L 0.310 [7.9mm] 0.078 [2.0mm] D T 0.156 [4.0mm] C A 0.500 [12.7mm] E-200 2.0 (50.8) E-250 E-300 E-350 E-400 E-450 E-500 E-550 E-600 E-650 E-700 E-750 E-800 2.5 (63.5) 3.0 (76.2) 3.5 (88.9) 4.0 (101.6) 4.5 (114.3) 5.0 (127.0)

E-200

Abstract: E-250 E-300 E-350 E-400 E-450 E-500 E-550 E-600 E-650
Contextual Info: REV. D L ±.062 1.6 PART NO. L 0.310 [7.9mm] 0.078 [2.0mm] D T 0.156 [4.0mm] C A 0.500 [12.7mm] E-200 2.0 (50.8) E-250 E-300 E-350 E-400 E-450 E-500 E-550 E-600 E-650 E-700 E-750 E-800 2.5 (63.5) 3.0 (76.2) 3.5 (88.9) 4.0 (101.6) 4.5 (114.3) 5.0 (127.0)

Contextual Info: R e s s e 1 5 0 0 EHMC + / - 1 7 . PT C : , 7/1/0 □ P E P A T I N G F: A N G E : - 5 5 T □ 1 0 0 C G T E R A G E R A N C E : - 0 5 T E 150 C +THEPMAL T I M E C E N C T A E T : 30 G EL MAX * D I G G I F' A T I E N C E N G T A N T ! E , 5 n W / C M I N P E W E R R A T I N E : , E 5 W E E 5 E , D E R A T E T E ICn

Contextual Info: E E 2 5 E 15 0 OHM: +/-3/1 PTC ; , 7/1/L □ P E P A T I NG F:A NGE : - 5 5 T □ 100 C ETDEAEE PANCE :-0 5 TE 150 E +THEPMAL TIME C E N 5 T A N T : 30 GEL MAX * D I 5 5 1P A T I E N 15E N5 T A NT ! E , 5 n W/ E MI N F'EWEF: F A T I N E ¡ , E 5 W E E 5 E , I E E A T E TE ICn

Contextual Info: B M axim um R a tin g s :i . . It e m S ym bol U n it SG 16AA20 SG 16AA 30 SG 16AA 40 SG 16AA 50 SG 16AA 60 R e p e titiv e P e a k R e v e rs e V o lta g e V rrm V 200 300 400 500 600 N o n -R e p e titiv e P e a k R e v e r s e V o lta g e V rsm V 240 360

Contextual Info: DRW NO. ± 5 5 - 4 6 X X X 2 — B D E F S T A C K I N G H E I GHT 44 4 4 mm B E T W E E N 40 4 0 mm B E T W E E N 30 30 mm B E T W E E N 2 2 mm B E T W E E N 22 1 0 J 1 5 = 15 mm B E T W E E N = 100 = 85 = 10 0 = 85 ohms ohms, ohms ohms. HSD SEE D E T A I L B

25AA20

Contextual Info: • Maximum Ratings S ym bol U n it SG 25AA20 SG 25AA30 SG 25AA40 R e p e titive P e a k R e ve rse V oltag e V rru V 200 300 400 500 N o n -R e p e titiv e P e a k R e ve rse V o lta g e V rsu V 240 360 48 0 600 720 R e p e titiv e P e a k O ff-S ta te V oltag e

Contextual Info: THYRISTOR SC40C •Maximum Ratings SC40C-80 SC40C-100 SC40C-120 U n it 800 1 000 1 200 V 720 960 1 100 1 300 V 600 800 1 000 1 200 V SC40C-40 SC40C-60 V rrm R e p e t it iv e P e a k R e v e r s e V o lt a g e 400 600 V rsm N o n - R e p e titiv e P e a k R e v e rs e V o lta g e

h1g1

Contextual Info: i S T A C K I N G MODULE PAR T NUMBER TREE 9 5 5 4 5 X X X 2 X “V STACKING 44 44 mm B E T W E E N 40 40 mm B E T W E E N 30 30 mm B E T W E E N 22 22 mm B E T W E E N [10] 15 = 15 mm B E T W E E N 100 ohms, 85 ohms, 100 ohms. 85 ohms. P L A T I N G OPTIONS

Contextual Info: Rla!2 5 C !5 0 0 □ HM:I: +/-5/1 P T C : ,7/1/L □ P E F:A T I N G F:A N G E :- 5 5 T E 10 0 C G T E R A G E R A N G E - b 5 TE 150 C ^ T H E R M A L T I M E G E N E T A N T :30 CEE, M A X * DI 5 GI F'A T I □ N C E N G T A N T :E ,5 n W / C M I N F E W E R R A T I N G :,E 5 W E E 5 C , D E R A T E T E 100

Contextual Info: m LG Semicon Co,Ltd, GM76C8128CL/CLL-W 131,072 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration KJ NC E 32] Vcc 3l] A15 A16 E 30] CS2 A14 E 29] AVE A12 E A7 E æ] A13 A6 E 27] A8 A5 E 2ß\ A9 A4 E 25] All 24] /OE A3 E 23] AIO A2 E Al E 22] /CS1

telefunken ra 200 amplifier

Abstract: UBA 4001 BI474 EL3010 tube el 36 telefunken ra 100 telefunken ra 200 2X40 Telefunken tubes A-0601
Contextual Info: Netzröhre für GW-Heizung S Ä EL 3010 T E L E F UN K E N DC-AC-Heating L e is t u n g s p e n t o d e indirectly heated connected in parallel P o w e r p e n to d e Vorläufige technische Daten • Tentative data Z u v e rlä ssig k e it R e lia b ility

e1263

Contextual Info: 30,3 E1.1933 Frontpla ttenausschnitt Rueckseite panel cu t out (rear side) > = 0 3 ,2 E.1263 W e rk s to ff< M a s s s ta b i * ) L ! e fe r a n t d a r f o hn e R u e c k s p r a c h e n ic h t g e a e n d e r t *e r d e n 2:1 Z eich nu n g u r h e b e r r e c h t lic h

5Z27 DIODE

Abstract: zener diode T 5z27
Contextual Info: SILICON DIFFUSED JUNCTION TYPE ZENER DIODE 5Z27/30 POWER SURGE SUPPRESSOR Unit in m m d e s i g n e d for u s e as a r e v e r s e p o w e r t r a n s i e n t s u p p r e s s o r to p r o t e c t a u t o m o t i v e e l e c t r i c a l e q u i p m e n t s

EIA-J Date Code System Appendix 4

Contextual Info: DAT E DRAWN SEP.-30-‘07 CHECKED SEP.-30-‘07 CHECKED SEP.-30-‘07 NAME APPROVED DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,

Contextual Info: DAT E DRAWN SEP.-30-‘07 CHECKED SEP.-30-‘07 CHECKED SEP.-30-‘07 NAME APPROVED DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,

Contextual Info: a W S1M8-XCX WHITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8-XCX 32 DIP TOP VIEW A18C 1 E ^ 31 □ A15 30 □ A17 A7C 5 28 □ A13 E A5 E A4 E A3 E A2 E A1 E AO E i/ooE i/oi E E volutionary, Corner P ow er/G round Pinout

Contextual Info: Rla!2 5 G ! b 8 0 GHMC +/-2 /1 PTC : , 7/1/L □ P E P A T I NG F: A NG E : - 5 5 T □ 100 C C T E F A E E RANCE : - 0 5 T E 150 C +THEPMAL T I M E C G NC T A NT ; 30 GE L MAX * D I G GI p A T I E N L'E NG T A NT ! E , 5 n W/ C MI N PEWER F A T I N E ¡ , G 5 W E E 5 E , D E F A T E T E 1 0 i