E07 MARKING Search Results

frw-14

Abstract: F12 scr 120 63C09 SCR based power factor improvement circuit diagram SVR03 16V100UF electrolytic capacitor smd code marking marking code HY SMD Transistor smd code marking WV 750H
Contextual Info: HENYWELL HY-CON Aluminum solid electrolytic capacitor INDEX Products Guide Page Series List 1 System Diagram 2 Feature & Major Application 3 Marking & Part Number 4 Precaution 5-10 Products Specification 11-28 Characteristic Curve Table 29-31 Application Note

2431A

Abstract: TSC 2431A TS2431 shunt regulator negative TS2431A General Electric scr SOT-23 SCR TRIAC 2431B ka 70 05 marking diagram 65 regulator
Contextual Info: TS2431 Adjustable Precision Shunt Regulator TO-92 SOT-89 Pin Definition: 1. Reference 2. Anode 3. Cathode SOT-23 Pin Definition: 1. Cathode 2. Reference 3. Anode SOP-8 Pin Definition: 1. Cathode 8. Reference 2. Anode 7. Anode 3. Anode 6. Anode 4. N/C 5. N/C

TS5213CX550

Abstract: computer smps circuit diagram TS5213
Contextual Info: TS5213 80mA Low Noise LDO Voltage Regulator with Enable Function SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. N/C 5. Output SOT-353 Pin Definition: 1. Enable 2. N/C or Ground 3. Ground 4. Output 5. Input General Description TS5213 is an efficient linear voltage regulator with ultra low noise output, very low dropout voltage typically 50mV at

4800 N-channel mosfet

Abstract: MOSFET TSSOP-8 dual n-channel esd protect mosfet mosfet 4800 4800 mosfet MOSFET TSSOP-8 TSM6968SD TSM6968SDCA y parameter of mosfet
Contextual Info: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 22 @ VGS = 4.5V 6.5 29 @ VGS = 2.5V

Contextual Info: TS13003 High Voltage NPN Transistor TO-92 Pin Definition: TO-126 1. Emitter 2. Collector 3. Base Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 0.8V @ IC / IB = 0.5A / 0.1A Block Diagram ●

Contextual Info: TS9011 250mA Low Quiescent Current CMOS LDO SOT-23 Pin Definition: 1. Ground 2. Output 3. Input SOT-89 Pin Definition: 1. Ground 2. Input 3. Output TO-92 Pin Definition: 1. Ground 2. Input 3. Output General Description TS9011 is a positive voltage regulator developed utilizing CMOS technology featured very low power consumption,

RF transistor marking IN SOT-89

Abstract: marking 43 sot-89 A1 marking code sot-89 TS9011 TS9011A marking CODE A3 SOT89 LDO SOT89 vin 30v SOT89 MARKING CODE A1 system reset sot-89 e07 mARking
Contextual Info: TS9011 250mA Low Quiescent Current CMOS LDO SOT-23 Pin Definition: 1. Ground 2. Output 3. Input SOT-89 Pin Definition: 1. Ground 2. Input 3. Output TO-92 Pin Definition: 1. Ground 2. Input 3. Output General Description TS9011 is a positive voltage regulator developed utilizing CMOS technology featured very low power consumption,

Contextual Info: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 22 @ VGS = 4.5V 6.5 29 @ VGS = 2.5V

npn transistors 400V 0.1A

Abstract: npn switching transistor Ic 100mA MARKING CODE 24 TRANSISTOR TS13002ACT TRANSISTOR TS13002A TS13002ACT ts13002
Contextual Info: TS13002A High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.3A VCE SAT Features 1.5V @ IC / IB = 200mA / 20mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

NPN Transistor 1A 400V to - 92

Abstract: NPN Transistor 1.5A 700V
Contextual Info: TS13003B High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 0.8V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

NPN Transistor 1A 400V

Abstract: e07 mARking NPN transistor NPN TO92 400V transistor case To 92 "NPN Transistor"
Contextual Info: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

marking 43 sot-89

Abstract: "PNP Transistor" O A B C sot-89 TSB772S TSD772SCT TSD772SCY TSD882S PNP TRANSISTOR SOT89 tsd882
Contextual Info: TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.)

Contextual Info: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features  1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

Contextual Info: TS13002A High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.3A VCE SAT Features 1.5V @ IC / IB = 200mA / 20mA Block Diagram  High Voltage  High Speed Switching Structure  Silicon Triple Diffused Type

computer smps circuit diagram

Abstract: RF transistor marking IN SOT-89 27BSC TS5214 voltage regulator sot 223 voltage regulator sot 89
Contextual Info: TS5214 300mA Low Noise LDO Voltage Regulator SOT-23 Pin Definition: SOT-89 SOT-223 1. Output 2. Input 3. Ground Pin Definition: TS5214 TS5214A 1. Output 1. Ground 2. Ground 2. Input 3. Input 3. Output SOP-8 Pin Definition: 1. Input 8. Output 2. Ground 7. Ground

Contextual Info: BL8504 High-Precision Low Voltage Detector DESCRIPTION FEATURES BL8504 is a series of high precision voltage detector with ultra low current consumption 500nA typ. at Vdd=3.0V . It can work at very low voltage, which makes it perfect for system reset. •

Contextual Info: Doc No. TT4-EA-14570 Revision. 1 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-14570 Revision. 2 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-14543 Revision. 2 Product Standards MOS FET FC694309ER FC694309ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 1.5 V drive  Halogen-free / RoHS compliant

semiconductor body marking

Contextual Info: NB2780A Low Power, Reduced EMI Clock Synthesizer The NB2780A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2780A reduces ElectroMagnetic Interference EMI at the clock source, allowing system wide reduction of EMI of all clock dependent

Contextual Info: Ordering number : ENN7320 ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features • • Package Dimensions Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321 [ESGD100]

Contextual Info: Doc No. TT4-EA-14513 Revision. 1 Product Standards MOS FET FC6B22090L FC6B22090L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features  Low source-source ON resistance:Rss on typ. = 8.5 m （VGS = 4.5 V)

NB2780A

Contextual Info: NB2780A Low Power, Reduced EMI Clock Synthesizer The NB2780A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2780A reduces ElectroMagnetic Interference EMI at the clock source, allowing system wide reduction of EMI of all clock dependent

Contextual Info: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view