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Contextual Info: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Specifications Features • Density: 512M bits • Organization 8M words × 16 bits × 4 banks • Package: 84-ball FBGA (µBGA) Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V |
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EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E50 |