E1 3009 Search Results

v36 cross cable

Abstract: RJ-48C BNC AF-VTOA-0085 TS16 g706 RJ48C
Contextual Info: ACE-20-E1 E1 ATM Access Concentrator • • FEATURES • Multiplexes three user • • • • • • • • • • ports to an ATM E1 User Network Interface UNI Consolidates two data ports (Ethernet, Frame Relay or ATM DXI), and one TDM port One of the data ports can

omron C60k cables pin diagram

Abstract: OMRON LAB4
Contextual Info: Cat. No. W206-E1-04 SYSMAC CV500-BSC11/21/31/41/51/61 BASIC Units OPERATION MANUAL blank page CV500-BSC11/21/31/41/51/61 BASIC Units Operation Manual Revised August 2003 Certain Terms and Conditions of Sale 1. Offer; Acceptance. These terms and conditions these "Terms" are deemed

2561 OPTO

Abstract: Thermistor TAG 9223 opto 2561 aod 4620 BIT 3713 modbus protocol modicon
Contextual Info: MODBUS/TCP PROTOCOL GUIDE For use with: SNAP PAC R-Series Controller SNAP PAC S-Series Controller SNAP PAC EB Brains SNAP Ethernet I/O Units SNAP Simple I/O Units SNAP Ultimate I/O Units E1 I/O Units E2 I/O Units Form 1678-070216—February 2007 43044 Business Park Drive • Temecula • CA 92590-3614

S5 100 B112 RELAY

Abstract: relay S5 100 B112 MP 130B 1800 I574-E1-04 NC481 service manual CJ1W-NC281 Delta MP 130B 01 5A/puma inverter p5 series manual
Contextual Info: Inverter MX2/RX Series EtherCAT Communication Unit User’s Manual 3G3AX-MX2-ECT 3G3AX-RX-ECT I574-E1-04  OMRON, 2012 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form, or by any means, mechanical, electronic, photocopying, recording, or otherwise, without the prior written permission of OMRON.

Contextual Info: MIL-C-39006 Military Style Tantalum Capacitors CLR25 MIL-C-39006 PART NUMBER SYSTEM M39006 01 300V Abbreviated form of MIL-C-39006 Tantalum Capacitors Sequential dash number from table. For specific value of capacitance, tolerance, voltage, case size and failure

Bolt Torque M32

Abstract: hydraulic shock absorber RBC2015 RBC0805 RB27-X331 RBC1411 shock absorber RBC1007 Energy Me bm10
Contextual Info: Shock Absorber Series RB Impact and noise absorption Automatic adjustment to the most appropriate absorption performance Dampening to meet the high speed requirements of the modern world. Specially designed orifice can absorb energy comprehensively and most appropriately in many different

Contextual Info: P R E L I M I N A R Y QLSLAC Quad Low Voltage Subscriber Line Audio-Processing Circuit Le58QL02/021/031 APPLICATIONS
RELATED LITERATURE Codec function on telephone switch linecards FEATURES



Low-power, 3.3 V CMOS technology with 5 V tolerant digital inputs

R1Z regulator

Abstract: chopper transformer CD11 CD12 CD21 CD22 CD23 CD24 ST CD21 specifications
Contextual Info: Am79Q02/021/031 Quad Subscriber Line Audio-Processing Circuit QSLAC Devices DISTINCTIVE CHARACTERISTICS

Performs the functions of four codec/filters Software programmable: — SLIC input impedance — Transhybrid balance — Transmit and receive gains

windmill design

Abstract: NOTCH FILTER DESIGN CIRCUIT DIAGRAM 2011 R1Z regulator solna c30 circuit CD11 CD12 CD21 CD22 CD23 CD24
Contextual Info: Am79Q02/021/031 Quad Subscriber Line Audio-Processing Circuit QSLAC Devices DISTINCTIVE CHARACTERISTICS

Performs the functions of four codec/filters Software programmable: — SLIC input impedance — Transhybrid balance — Transmit and receive gains

Am79Q063

Abstract: CD11 CD12 CD21 CD22 CD23 CD24
Contextual Info: Am79Q061/063 Quad Subscriber Line Audio-Processing Circuit QSLAC Devices DISTINCTIVE CHARACTERISTICS

Pin Programmable PCM/MPI or GCI Interface
General Circuit Interface (GCI) Standard PCM/microprocessor interface (PCM/MPI) — Control and PCM data on a single port

Contextual Info: P R E L I M I N A R Y QLSLAC Quad Low Voltage Subscriber Line Audio-Processing Circuit Le58QL061/063 APPLICATIONS
RELATED LITERATURE Codec function on telephone switch linecards FEATURES



Low-power, 3.3 V CMOS technology with 5 V tolerant digital inputs

Contextual Info: P R E L I M I N A R Y QLSLAC Quad Low Voltage Subscriber Line Audio-Processing Circuit Le58QL061/063 APPLICATIONS
RELATED LITERATURE Codec function on telephone switch linecards FEATURES



Low-power, 3.3 V CMOS technology with 5 V tolerant digital inputs

1N400X

Abstract: P1001SC AM79R101 P100 TISP61089AD
Contextual Info: Ringing SLIC Ringing Subscriber Line Interface Circuit Am79R101 device APPLICATIONS










ORDERING INFORMATION Integrated Access Device IAD Smart Residential Gateway (SRG) Device Set Top/House Side Box Am79R1011JC Network Interface Unit (NIU)

P1001SC

Abstract: 1N400X AM79R100 P100 TISP61089AD Am79R1001JC
Contextual Info: Ringing SLIC Ringing Subscriber Line Interface Circuit Am79R100 device APPLICATIONS










ORDERING INFORMATION Integrated Access Device IAD Smart Residential Gateway (SRG) Device Set Top/House Side Box Am79R1001JC Network Interface Unit (NIU)

RSN 310 r 36

Abstract: max 8770 DA79 Detector Adaptor RSN 310 r 37
Contextual Info: Am79R79 Ringing Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS







Ideal for short-loop applications Ideal for ISDN terminal adaptor and fixed radio access applications On-chip ringing with on-chip ring-trip detector Low standby state power

SE-169

Abstract: HPA Ku max 8770 P1001SC RSN 310 r 36 TISP61089AD g42l PL032 RSN 310 r 37
Contextual Info: Am79R100 Ringing Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS







Ideal for short-loop applications — ISDN terminal adaptor and NT1+, fixed radio access, PBX and cable telephony Through trapezoidal ringing On-chip ring-trip detector

RSN 310 r 37

Abstract: Kingston P1001SC RSN 310 r 36 DA79 TISP61089AD RDC2 thermal overload relay MT - 32
Contextual Info: Am79R101 Ringing Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS







Ideal for short-loop applications — ISDN terminal adaptor, fixed radio access, PBX and cable telephony Through sinusoidal ringing with DC offset On-chip ring-trip detector

3009N

Abstract: APM3009N A102 J-STD-020A
Contextual Info: APM3009N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/70A , RDS ON =7mΩ(typ.) @ VGS=10V RDS(ON)=11mΩ(typ.) @ VGS=4.5V • Super High Dense Advanced Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged TO-220 , TO-252 and TO-263 Packages

DIODE 1N649

Abstract: SZUFD16 1.5ke series SZU16 Sussex Semiconductor 1N4172A 1N4973 SFD16 S100 p4k 20a
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. DIES AND CELLS SECTION 7 SUSSEX TABLE OF CONTENTS SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 TABLE OF CONTENTS DEVICE TYPE PAGE NUMBER 1. TRANSIENT SUPPRESSOR DIES

MCGA-349

Abstract: MQFPF196 988000
Contextual Info: Pages 1 to 29 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS, GATE ARRAY/EMBEDDED ARRAY BASED ON TYPE MH1RT ESCC Detail Specification No. 9202/076 Issue 2 July 2007 Document Custodian: European Space Agency - see https://escies.org ESCC Detail Specification No. 9202/076

103H transistor

Abstract: E1 3007 GDFP1-G10 MIL-M-38510 103H GDFP2-F16 e74 330 diode marking e41 RS 3005 CL LM119
Contextual Info: INCH-POUND MIL-M-38510/103H 18 February 2005 SUPERSEDING MIL-M-38510/103G 03 November 2004 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE COMPARATORS, MONOLITHIC SILICON Reactivated after 18 February 2005 and may be used for either new or existing design acquisition.

RS 3005 CL

Abstract: E1 3009 LM119
Contextual Info: INCH-POUND MIL-M-38510/103H 18 February 2005 SUPERSEDING MIL-M-38510/103G 03 November 2004 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE COMPARATORS, MONOLITHIC SILICON Reactivated after 18 February 2005 and may be used for either new or existing design acquisition.

LA 78141

Abstract: la 78141 equivalent glass frit electronics TTL LA 78141 data sheet la 78141 TIBPAL22V10 TIBPAL22VP10 TIBPAL22VP10-20C TIBPAL22VP10-25M D2943
Contextual Info: TIBPAL22VP10-20C, TIBPAL22VP10-25M HIGH-PERFORMANCE IMPACT-X  PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS013 – D2943, FEBRUARY 1987 – REVISED JUNE 1991 • • • • • • • • CLK/I I I I I I I I I I I GND Choice of Operating Speeds: TIBPAL22VP10-20C . . . 20 ns Max

mcga

Abstract: MCGA-349 MCGA472 MQFPF196 MCGA349 bi 370 transistor MQFPT352 988000 E1 3007
Contextual Info: Pages 1 to 29 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS, GATE ARRAY/EMBEDDED ARRAY BASED ON TYPE MH1RT ESCC Detail Specification No. 9202/076 Issue 3 March 2010 Document Custodian: European Space Agency - see https://escies.org ESCC Detail Specification No. 9202/076