CMOS PLD Programming Hardware and Software Suppor
Abstract: EPSON EM 432 BGA 168 AOI222 AOI222H AT28 AT29 buffer register vhdl IEEE format Bidirectional Bus VHDL S-MOS epson
Text: Features • 0.5 µm Drawn Gate Length 0.45 µm Leff Sea-of-Gates Architecture with • • • • • Triple-level Metal Embedded Flash Memory up to 1 Mb and E2 Memory up to 64 Kb 3.3V Operation with 5.0V Tolerant Input and Output Buffers High-speed, 200 ps Gate Delay, 2-input NAND, FO = 2 Nominal
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10T/100
ATL50/E2
1173C
02/99/1M
CMOS PLD Programming Hardware and Software Suppor
EPSON EM 432
BGA 168
AOI222
AOI222H
AT28
AT29
buffer register vhdl IEEE format
Bidirectional Bus VHDL
S-MOS epson
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NAND32GW3F4A
Abstract: No abstract text available
Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 32 Gbits of memory array – 1024 Mbits of spare area – Cost-effective solutions for mass storage
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NAND32GW3F4A
32-Gbit
4224-byte
NAND32GW3F4A
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16G nand
Abstract: No abstract text available
Text: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High-density SLC NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND16GW3F4A
16-Gbit
4224-byte
16G nand
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NAND16GW3F4A
Abstract: 16G nand
Text: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND16GW3F4A
16-Gbit
4224-byte
NAND16GW3F4A
16G nand
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MT29C1G24MADLAJA-6
Abstract: Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 137-Ball MCP NAND sDR mt29c 1g nand DDR mcp
Text: Preliminary‡ Micron Confidential and Proprietary 137-Ball NAND Flash with LP-DRAM MCP Features NAND Flash with LP-DRAM 137-Ball Multiple-Chip Package MCP MT29CxGxxMAxxxJA Current Production Part Numbers: Table 1 on page 2 Features Figure 1: • All-Micron NAND Flash and LP-DRAM
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137-Ball
MT29CxGxxMAxxxJA
09005aef82ff4431
09005aef82ff448c
137ball
MT29C1G24MADLAJA-6
Micron 512MB nand FLASH
MT29C2G24MAKLAJA-6
Micron 512MB nand FLASH mcp
Flash MCp nand DRAM 137-ball
JW190
MCP NAND sDR
mt29c
1g nand DDR mcp
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NAND16GW3F4A
Abstract: No abstract text available
Text: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High-density SLC NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND16GW3F4A
16-Gbit
4224-byte
NAND16GW3F4A
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Untitled
Abstract: No abstract text available
Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High-density SLC NAND flash memory – 32 Gbits of memory array – 1 Gbit of spare area – Cost-effective solutions for mass storage
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NAND32GW3F4A
32-Gbit
4224-byte
TSOP48
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Untitled
Abstract: No abstract text available
Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High-density SLC NAND flash memory – 32 Gbits of memory array – 1 Gbit of spare area – Cost-effective solutions for mass storage
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NAND32GW3F4A
32-Gbit
4224-byte
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Untitled
Abstract: No abstract text available
Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Mbit of spare area
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NAND32GW3D4A
32-Gbit
4224-byte
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32Gbit
Abstract: 16 GBit flash 32G nand flash nand32 NAND32G
Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Features • High-density SLC NAND flash memory – 32 Gbits of memory array – 1 Gbit of spare area – Cost-effective solutions for mass storage
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NAND32GW3F4A
32-Gbit
4224-byte
32Gbit
16 GBit flash
32G nand flash
nand32
NAND32G
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JESD97
Abstract: NAND04G-B2D TSOP48 outline
Text: NAND16GW3B4D 16-Gbit 4 x 4 Gbits , two Chip Enable, 2112-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3B4D
16-Gbit
2112-byte
TSOP48
JESD97
NAND04G-B2D
TSOP48 outline
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bad block management in mlc nand
Abstract: No abstract text available
Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area
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NAND32GW3D4A
32-Gbit
4224-byte
bad block management in mlc nand
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Untitled
Abstract: No abstract text available
Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area
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NAND16GW3C4B
16-Gbit
2112-byte
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64Gbit
Abstract: NAND64GW3D4A bad block management in mlc nand JESD97 package tsop48 NUMonyx NAND64G
Text: NAND64GW3D4A 64-Gbit 4 x 16 Gbits , two Chip Enable, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell (MLC) flash memory – 64 Gbits of memory array – 2 Gbits of spare area
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NAND64GW3D4A
64-Gbit
4224-byte
64Gbit
NAND64GW3D4A
bad block management in mlc nand
JESD97
package tsop48
NUMonyx NAND64G
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JESD97
Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area
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NAND16GW3C4B
16-Gbit
2112-byte
JESD97
NAND08GW3C2B
NAND16GW3C4B
16Gbit
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K9F1208
Abstract: SDTNFAH-256
Text: Genesys Logic, Inc. GL820 USB 2.0 Flash Drive Controller Datasheet Revision 1.12 May 06, 2004 GL820 USB 2.0 Flash Drive Controller Copyright: Copyright 2004 Genesys Logic Incorporated. All rights reserved. No part of the materials may be reproduced in any form or by any means without prior written consent of Genesys Logic Inc.
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GL820
GL820
48-pin
64-pin
K9F1208
SDTNFAH-256
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HY27Uu088G5M
Abstract: HY27UT084G2M 29f8g08 HY27UG084G2M HY27UH088G2M 29F2G08 SERVICE MANUAL tv samsung micron 29F2G08AA TH58NVG*D hynix nand
Text: ST72681 USB 2.0 high-speed Flash drive controller Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHYSupports USB high speed and full speed – Suspend and Resume operations TQFP48 7x7 ■ Clock management – Integrated PLL for generating core and
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ST72681
TQFP48
HY27Uu088G5M
HY27UT084G2M
29f8g08
HY27UG084G2M
HY27UH088G2M
29F2G08
SERVICE MANUAL tv samsung
micron 29F2G08AA
TH58NVG*D
hynix nand
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MT29C1G12
Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
Text: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package
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152-Ball
409ng
09005aef8326e5ac
09005aef8326e59a
152ball_
MT29C1G12
mt29c1g12ma
MT29C1G12M
MT29C1G
smd code AA5
SMD MARKING CODE b21
MT29C2G24MAKLACG-6
smd code U21
marking aa5
mt29c1g1
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EDI784MSV50BB
Abstract: EDI784MSV50BC EDI784MSV50BI
Text: EDI788MSV 8Megx8 NAND Flash ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic Features • Single 3.3 - Volt Supply • Separate Output Buffer power supply 3.3V or 5V • Organization Memory Cell array (8M+256K) bit x 8bit Data Register (512 +16) bit x 8 bit
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EDI788MSV
EDI784MSV50BM
EDI788MSV
EDI784MSV50BB
EDI784MSV50BC
EDI784MSV50BI
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nand flash
Abstract: STMicroelectronics NAND256W3A NAND256W3A ST Flash st nand flash application note AN1759 NAND128R3A NAND128R4A NAND128W3A NAND128W4A
Text: AN1759 APPLICATION NOTE How to Connect NAND Flash Memories to Build Storage Modules CONTENTS • INTRODUCTION ■ SOLUTION 1, SHARED CONTROL SIGNALS ■ ■ ■ ■ SOLUTION 2, SEPARATE CONTROL SIGNALS SOLUTION 3, PARALLEL BUS REFERENCES REVISION HISTORY This application note explains how to connect two or more
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AN1759
NAND128R3A
NAND512R3A
NAND128W3A
NAND512W3A
NAND128R4A
NAND512R4A
NAND128W4A
NAND512W4A
NAND256R3A
nand flash
STMicroelectronics NAND256W3A
NAND256W3A
ST Flash
st nand flash application note
AN1759
NAND128R3A
NAND128R4A
NAND128W3A
NAND128W4A
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TFBGA55
Abstract: NAND512-A bga 6x8 Package NAND01G-A NAND128-A NAND256-A VFBGA63
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
TFBGA55
NAND512-A
bga 6x8 Package
NAND01G-A
NAND128-A
NAND256-A
VFBGA63
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Untitled
Abstract: No abstract text available
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5816BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 M B IT 2 M x 8 BITS C M O S N A N D FLASH E2 PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 bytes
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TC5816BDC
TC5816
264-byte,
264-byte
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ssfdc tc
Abstract: TC58V32ADC fDC22A a7611
Text: T O S H IB A TC58V32ADC TENTATIVE 3 2 M b it TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 4 M X 8 b it SILICON GATE CMOS C M O S N A N D E2 P R O M (4 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32ADC
TC58V32ADC
32MByte
FDC-22A
ssfdc tc
fDC22A
a7611
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