E23FL Search Results

511s

Contextual Info: Ratings and c h arac te ristic s of Fuji I G B T M B T 2 M B I T 5 J — 0 6 O Module (TENTATIVE) 1. Outline Drawing Unit : a* * Isolation Voltage : AC 2500 V 1 limite ìli .l i- 2 : ’ el1li 111 lìti 1|S- 5* sÏ S i r M141* Ww Tab type terminals ¡Ê iïlll

XFMRS 162

Contextual Info: 1. M e c h a n ic a l D im e n s io n s : 2. S c h e m a tic : Sec Pri B A 1.92 1 .6 2 Max Max XFMRS YYWW X F D -5 -2 4 X155D TU / 1 2 3 -o 5 2 o3 o- -o 6 -o 7 4a- • -o 8 E le c tr ic a l 4 - 1 o- t Prim ary: Pins Ex I: Pins D 1.41 Parallel

TS808C04

Abstract: ts808c WAAI
Contextual Info: T S 808C 04 3 oa ' > 3 'y h + — V T ¥ 4 si'i'tjm-F K SCHOTTKY BARRIER DIODE l Features • "JS6 Surface m ount device. • te V F Low V f • m m m m Wy? F *< *1=# t i & i . ' C on nection D iagram Super high speed sw itching. • 7 V -*'-a w e « *« utt

Contextual Info: I- 2 COLLMER SEIUCONÏUCTOR INC S K 1 5 1 2 4flE D • 52307=12 0D01fl22 C1S2 Scope This specifies Fuji power MOSFET 2 S K 1 5 1 2 2. Outline I Construction I! ) Application HI) Outview N-channel enhanceaent mode power MOSFET for switching

high voltage diodes 24kv

Abstract: ESJA56-24A
Contextual Info: Thli m eletiel And lh* lolorm iitko*! herein !• Hie prupoily o l Fuji Electric Co.Lid. They ahnll be «either reproduced, copied, l« n tt or dUcloee-tf In any way w hnU oevtr lor Uie tme ol m ty third perly nor u*«tf lor Ihe menutnclurlng ptirpo*«» w ith ou t

Contextual Info: FU JI 2SK2638-01MR N-channel MOS-FET FAP-IIS Series 0,65ß 450V > Features 10A 50W > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Repetitive Avalanche Rated

Contextual Info: 2 2 3 a ? “Ì2 0004M01 27b -* - S P E C I F I C A T I O N 1G B T DEVICE NAME : TYPE NAME : SPEC. No. : MS 5 F 3 5 1 4 DATE : Jun.-25-1996 1M B H 1 5 D - 1 2 0 Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME