EA-PS 9000 Search Results

Contextual Info: EA-PS 9000 3U 3.3KW - 150KW HOCHLEISTUNGS-DC-LABORNETZGERÄTE / HEAVY DUTY LABORATORY DC POWER SUPPLIES EA-PS 9080-340 3U hh Mehrphaseneingang 340.460VAC hh Hoher Wirkungsgrad bis 95,5% hh Ausgangsleistungen: 0.3,3kW, 0.5kW, 0.6,6kW, hh Multi-phase input 340.460VAC

5KW PFC

Abstract: PFC 6kw PFC 2.5kw PFC 5kw PFC 3kw designed PFC 5kw pfc 3000w PFC 1.5kw EA-PS 9000 3000W power supply
Contextual Info: PROGAMMIERBARE LABORNETZGERÄTE / PROGRAMMABLE LABORATORY POWER SUPPLIES EA-PSI 9080-50 Programmierbare Netzgeräte Die Geräteserie EA-PSI 9000 ist eine Weiterentwicklung der Serie EA-PS 9000. Das neuartige Konzept der Leistungsstufe bietet dem Anwender sowohl

Contextual Info: EA-PS 9000 2U 1000W - 3000W PROGRAMMIERBARE DC-LABORNETZGERÄTE / PROGRAMMABLE LABORATORY DC POWER SUPPLIES EA-PS 9080-60 2U hh hh hh hh hh hh hh hh hh hh hh hh hh hh hh 46 Weiteingangsbereich 90.264V, mit aktiver PFC Hoher Wirkungsgrad bis 93% Ausgangsleistungen: 0.1000W bis 0.3000W

EA-PS

Abstract: EA-PS 9000 15-POL 650-watt 9032-20 GROB 903-220
Contextual Info: Die neuen getakteten Labornetzgeräte Serie EA-PS 9000 q q q q q q q q q q q q q q q q Ausgangsleistung 320W, 650W, PFC bei 650Watt Ausgangsspannung 0.16V, 0.32V und 0.65V Ausgangsstrom 5 bis 40A Labor- und Systemanwendungen, Primär getaktet Ausgangsspannung kont. einstellbar, grob und fein

Contextual Info: ByteBlaster Parallel Port Download Cable J a n u a r y 1998, ver. 2 D ata S h e e t Features • ■ Functional Description A llow s PC u sers to perform th e follow ing functions: P rogram MAX 9000, MAX 7000S, an d MAX 7Û00A devices in-system via a sta n d ard parallel p o rt

Ericsson AB PGR 20312

Abstract: DFB ea InGaAs APD, 10 Gb/s, -30 dBm 20312 pgr optical supervisory channel 10 gb laser diode Ea 1530 A mini link ericsson Ericsson Power Modules stm-64 dfb
Contextual Info: Ericsson Microelectronics Optoelectronic Products Ericsson is a world-leading supplier in the fast growing and dynamic telecommunications and data communications industry; offering advanced solutions for mobile and fixed networks and terminals. Our products and solutions meet communications needs in the home and

EA ELEKTRO-AUTOMATIK

Abstract: 232-C IEEE488 DE-41747 eurocard
Contextual Info: Bedienungsanleitung Operation manual IEEE 488.2 / RS232 Interface EA-PSP 5612 Art.-Nr.: 33100153 EA Elektro-Automatik, DE-41747 Viersen, Helmholtzstr. 31-33, 02162-3785-0, Fax 02162-16230 2 Inhalt / Index Deutsch Technische Daten 1. Einleitung 1.1 Grundlegendes zur Benutzung

termistor 10k

Abstract: 1522-PGT
Contextual Info: PGT 203 06 Optical Transmitter Submodule for 2.5 Gbps The transmitter module, intended for D-WDM applications at OC-48/STM16, consists of a DFB laser with integrated absorption modulator mounted in a high speed package including isolator. 7 1 10k TEC Features

STM-16

Contextual Info: PGT 203 06 DFB/EA Laser Module 2.5 Gb/s Applications Key Features • 1550 nm DFB CW source monolithicly integrated with an Electro Absorptionmodulator EA • Hermetic, 14 pin butterfly package • Single-mode fiber pigtail • 4 GHz typical bandwidth • –3 dBm output power

Contextual Info: PGT 203 27 DFB/EA Laser Module for 2.5 Gb/s Applications Key Features • L-band DFB CW source monolithicly integrated with an Electro Absorptionmodulator EA • Hermetic, 14 pin butterfly package • Single-mode fiber pigtail • 4 GHz typical bandwidth

DFB ea

Abstract: Ea 1530 A
Contextual Info: PGT 203 06 DFB/EA Laser Module for 2.5 Gb/s Applications Key Features • 1550 nm DFB CW source monolithicly integrated with an Electro Absorptionmodulator EA • Hermetic, 14 pin butterfly package • Single-mode fiber pigtail • 4 GHz typical bandwidth

Contextual Info: SERIES 3188 Aluminum Electrolytic Capacitors Long-Life Com puter-Grade Aluminum Electrolytic Capacitors DESCRIPTION: Series 3 1 8 8 Long-Life Aluminum Electrolytic Capacitors are designed for those applications where a standard com puter-grade product must

ilq 074

Abstract: 40312
Contextual Info: OXLEY = P \= BIPOLAR MULTI-CHIP LAMP RANGE FEATURES • 6 - chip array fo r high intensity output • bipolar d.c. or a.c. operation • w ide view ing angle • sunlight readable • rugged glass/m etal co n stru ctio n • sealed to BS 5490 IP67 • high reliability - 100%

E2495

Contextual Info: Discontinued Product—Support Information Only This literature was published years prior to the establishment of Agilent Technologies as a company independent from Hewlett-Packard and describes products or services now available through Agilent. It may also refer to products/services no longer supported by Agilent.

2CSC400002D0903

Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
Contextual Info: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente

PCD41

Contextual Info: PART NUM BER 0 C P - P C D 4 1 1 6/ /X-TR UNCONTEOLLED DOCUMENT ELECTRO-OPTICAL CHARACTERISTICS To =25'C PARAMETER SYMBOL FORWARD VOLTAGE Vf PEAK FORWARD VOLTAGE V fm REVERSE CURRENT r TERMINAL CAPACITANCE Ct YT COLLECTOR DARK CURRENT CEO T CURRENT TRANSFER RATIO

PPD29F800L

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PPD29F800L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE / 512 K-WORD BY 16-BIT (WORD MODE) Description The PPD29F800L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration.

8531

Abstract: sf.c thomson IC 8531 8531 2 E88TS
Contextual Info: r Z Z ^ 7# S G S -T H O M S O N 5 IL iO T « ! T S G 8531 SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER • ■ ■ ■ ■ ■ ■ CAUER TYPE 6TH ORDER STOPBAND ATTENUATION : 32dB typ PASSBAND RIPPLE : 0.15dB (typ) CLOCK TO CUT-OFF FREQ. RATIO : 400 CLOCK FREQUENCY RANGE : 4 TO 1800kHz

uPD29F008LGZ-B12B-LJH

Abstract: uPD29F008LGZ-B12B-LKH uPD29F008LGZ-B12T-LJH uPD29F008LGZ-B12T-LKH uPD29F008LGZ-B15B-LJH uPD29F008LGZ-B15B-LKH uPD29F008LGZ-B15T-LJH uPD29F008LGZ-B15T-LKH
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PPD29F008L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE Description The PPD29F008L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration. It possesses an automatic single Byte program function and an automatic block erase function that

2sb 667

Abstract: U1031 TSG8532 TSG8532XC TSG8532XJ TSG8532XP
Contextual Info: SbE 7 ^ 2 3 ? D OOB'iaEG S 6 S G S - T H O M S O N Tifi «SÒTH S-THOMSON TSG8532 M T - á H - 0 5 SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER • CHEBYCHEV TYPE ■ 6TH ORDER ■ STOPBAND ATTENUATION : 60dB typ AT 0.25 x Fc ■ PASSBAND RIPPLE : 0.45dB (typ)

x-band diode

Abstract: x-band limiter x-band limiter diode NJS6939 x-band filter
Contextual Info: NJS6939 X - j B an d D io d e L im ite r G E N ER A L DESCRIPTION N J S 6 9 3 9 is a high p ow er Limiter designed specifically fo r use in X -ban d radars. Since it has a self b ia se d limiter d io d e, n o external trigger and no bias is required. FEATURES

Contextual Info: PART NUMBER UNCONTROL­LED DOCUMENT ELEC TR O -O PTIC AL CHARACTERISTICS To = 25'C PARAMETER SYMBOL FORWARD VOLTAGE Vf PEAK FORWARD VOLTAGE V fm REVERSE CURRENT r TERMINAL CAPACITANCE Ct COLLECTOR DARK CURRENT CEO T CURRENT TRANSFER RATIO CRT COLLECTOR—EMITTER SATURATION VOLTAGE

65162

Abstract: transistor fn 1016
Contextual Info: electronic June 1992 HM 65162 HI-REL DATA SHEET 2kX8 VERY LOW POWER CMOS SRAM FEATU R ES ACCESS TIME : 70/85 ns . TTL COMPATIBLE INPUTS AND OUTPUTS VERY LOW POWER CONSUMPTION ACTIVE : 240 mW typ STANDBY : 2.0 uW (typ) DATA RETENTION : 0.8 (iW (typ) . ASYNCHRONOUS

Contextual Info: • R r M A P T 10 0 4 3 J V R ADVANCED po w er Te c h n o l o g y 1000v 22A 0.430Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®