EA5 RA MODULE Search Results

Contextual Info: DRAM MODULE 16 Mega Byte KMM53641OOAK/AKG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package G EN ERA L DES C R IPTIO N FEATURES The Samsung KMM5364100AK is a 4M bit x 36 Dynamic RAM high density memory module. The • Performance Range:

Contextual Info: DRAM MODULE KMM372C41OAK/AS KMM372C41 OAK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 2K Refresh, 5V G ENERA L D ES C R IPTIO N FEATURES The Samsung KMM372C410A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C41OA consists of eighteen

0829A

Contextual Info: '• 't*: : ! I !•] ! i I I : i ! I i ! 1,048,576 W O R D S x 9 BIT D Y N A M IC R A M M O D U LE DESCRIPTION The THM91070AS/AL and TTIM91070AS/AL are a 1,048,576 words by 9 bits dynamic RAM module which assembled 2 pcs of T C 514400A SJ and 1 pcs of T C 511000A J/B J on the printed circuit board.

Contextual Info: w s& m m ssm PÉSI mm •?^v|: v; § : f |j •*£*? m * c iiiillli 1,048,576 WORDS X 32 BIT DYNAMIC RAM DESCRIPTION MODULE PRELIMINARY The THM321000S is a 1,048,576 words by 32 bits "dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321000S can be as well used as 2,097,152 words by

tb41

Contextual Info: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: SIEMENS 256K X 36-Bit Dynamic RAM Module HYM 362500S-80 Advanced Information • 262 144 words by 36-bit organization • Fast access and cycle time 80 ns access time 150 ns cycle time • Fast page mode capability with 55 ns cycle time • Single + 5 V ± 10 % supply

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH2M32CZJ-6,-7/ MH2M32CNZJ-6,-7 FAST PAGE MODE 67108864-BIT (2097152-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH2M32CZJ/CNZJ is 2097152-word x 32-bit dynamic RAM and consists of four industry standard 2M x 8 dynamic RAMs in SOJ.

odq1

Abstract: HYM532120
Contextual Info: -H Y U N D A I HYM532120 W-Series 1M X 32-bit CMOS DRAM MODULE DESCRIPTION T ie HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each

Contextual Info: DRAM MODULE KMM372V41OAK/AS KMM372V41 OAK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V410A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V410A consists of eighteen

Contextual Info: GE C PLESSEY SEMI CONDS 43E GEC P LE SS EY D 37baS2S 00147bfl 1 IPLSB m a i ?504 MIL-STD-1750A Memory M anagement Unit/ Block Protect Unit S10208FDS Issue 1.3 O cto ber 1990 Features Block Diagram • Im plem ents Expanded Address and Block Protect Options of the MIL-STD-1750A Notice 1 Architecture

Contextual Info: DRAM MODULE KMM372C400AK/AS KMM372C400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C400A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C400A consists of eighteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-II 300mii

Contextual Info: Preliminary KMM364E124B J DRAM MODULE KMM364E124BJ Fast Page with EDO Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V G ENER AL DESCRIPTION FEATURES • Part Identification - KMM364E124BJ 1024 cycles/16ms, SOJ The Samsung KMM364E124BJ is a 1M bit x 64

Contextual Info: KMM372C213AJ/AT DRAM MODULE KMM372C213AJ/AT Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The S am sung KM M 372C 213A is a 2M bit x 72 D ynam ic RAM high density m em ory module. The tRAC 50ns 60ns 70ns KMM372C213A - 5

MH8M36DJ

Contextual Info: MITSUBISHI LSIs REV 2.1 APR.25.1996 MH8M36DJ/DNJ-5,-6,-7 Ì V FAST PAGE MODE 301989888-BIT 8388608 - WORD BY 36-BIT DYNAMIC RAM MODULE DESCRIPTION The MH8M36DJ/DNJ is 8388608 - word by 36 - bit dynamic RAM module . That module consists ot sixteen industry 4M x 4 dynamic

HD6473294P16

Abstract: HD6473294F16 HD6473294TF16 HD6473297C16 HD6473297F16
Contextual Info: Section 1 Overview 1*1 Overview The H8/3297 Series of single-chip microcomputers features an H8/300 CPU core and a complement of on-chip supporting modules implementing a variety of system functions. The H8/300 CPU is a high-speed processor with an architecture featuring powerful bit-manipulation

Contextual Info: STI724007D1 -xxVG 168-PIN DIMMS 4M X 72 Bit DRAM DIMM with EDO Mode and ECC FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC Vc *HPC STI.-60VG 60ns 20ns 110ns 30ns STI.-70VG 70ns 25ns 130ns 33ns • Fast Page with EDO Mode operation • CAS-before-RAS refresh capability

MT42C4256Z

Contextual Info: l i f- V nib MICRON • 512K X MT20D51240 40 DRAM M O DULE 512K X 40 DRAM FAST PAGE MODE MT20D51240 LOW POWER, EXTENDED REFRESH (MT20D51240 L) FEATURES • • • • • • • • • 72-pin single-in-line package High-performance, CMOS silicon-gate process.

Contextual Info: IBM11T2640HP 2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications • Performance: • System Performance Benefits:

schematic diagram inverter 12v to 24v 30a

Abstract: inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336
Contextual Info: Allen-Bradley Parallel DC Bus Supply Configurations Using Bulletin 2364E NRUs and Bulletin 2364F RGUs Bulletin 2364P User Manual Important User Information Solid-State equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the

36EJ-7

Contextual Info: MITSUBISHI LSIs MH2M36EJ-6,-7,-8,-10 75497472- BIT 2097152- WORD BY 3 6 - BÏT DYNAMIC RAM DESCRIPTION The M H 2M 36E J is 2 0 9 7 1 5 2 This consists of eight w o rd x 3 6 b it dynamic R A M . industry standard PIN CONFIGURATION(TOP VIEW) 1 M x 1 dynamic

Contextual Info: D S90C 3201 DS90C3201 3.3V 8 MHz to 135 MHz Dual FPD-Link Transmitter T ex a s In s t r u m e n t s Literature Number: SNLS192C Semiconductor DS90C3201 3.3V 8 MHz to 135 MHz Dual FPD-Link Transmitter General Description Features The DS90C3201 is a 3.3V single/dual FPD-Link 10-bit color

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

ADE-602-053

Abstract: electronica ddr QAA24 hitachi microcomputer h8 electronica ddr
Contextual Info: Notice W hen using this docum ent, keep the follow ing in mind: 1. This docum ent may, w holly or partially, be subject to change w ithout notice. 2. All rights are reserved: No one is perm itted to reproduce or duplicate, in any form , the w hole or part o f this

TDA 7786

Abstract: crystal washing machine service manual sfd 655 triac tag 8739 UM1233 E36 conclusion on lpg gas detector TL507 project on digital voltmeter using IC 7107 RS 307-402 TDA7786 causing for zero leading suppression 7447
Contextual Info: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system