EANG Search Results

Schaffner 1237

Contextual Info: rZ J S G S 'IH O M S O N 4 T /. EangMnmi@TrMnigi_ L9341 QUAD LOW SIDE DRIVER AVANCE DATA • DU/DT AND DI/DT CONTROL . PWM CONTROLLED OUTPUT CURRENT . SHORT CURRENT PROTECTION AND DI­ AGNOSTIC ■ INTEGRATED FLYBACK DIODE ■ UNDERVOLTAGE SHUTDOWN

Contextual Info: CATALOGUE o .I S T I N :a _ O CM CO CM UJ I « o z o 50/100A NULL BALANCE CURRENT SENSOR T O ( ISSUE NO . LISTINb CSN SERIES "HIS DRAWING IS FOR RRFERRNCR M TG-CSN-220 SOPEL' RANGE O PERA TI NG T EMP ERATURE HOUSING M A T E E I AI SENSING EANGE OUTPUT MAX I MUÌ1 NOMINAL

L-1016

Abstract: FPT-64P-M01 AU-AIS MB834200BPFQ MB834200BPFTN MB834200BPFTR MB834300BP MB834300BPFQ mb83
Contextual Info: « .1392 March 1992 Edition 1.0A FUJITSU DATA SH EET MB834200B CMOS 4M-Bit Mask Read Only Memory The Fujitsu MB834200B is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits. It has TTL-compatible I/O 3-state output level with full-static operation i.e., no clock

D4D-2120N

Abstract: 1A62 D4D-2a32N D4D-2121N D4D-120N d4d-3120n D4D-2131N D4D-1121N tb EN60947 D4D-1527N
Contextual Info:
General-purpose Limit Switch D4D-
N Compact, Economical, Plastic-body Limit Switch Featuring Direct Opening Action Contacts  Employs direct opening action mechanism that forcibly opens contacts, and assures accurate switching  Two sets of contacts: one NC for

YL 69 moisture

Abstract: YL 38 moisture A18 sot LH53B16R00N D16-D31-pin 70pin ssop LR7L
Contextual Info: SHARP E L 0 7 6 0 3 8 Nov. 10 1995 SPEC No. ISSUE: S P Product Type E C I F 1 6M I C A T bit I O N S MASK ROM LH5B7RXX Model No. _ L H 5 9 B 1 6 R 0 Q N &This specifications contains 14 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.

TRANSISTOR ED203

Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
Contextual Info: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the

37900D

Abstract: 11759C
Contextual Info: Agilent 8922S, 8922M, 83220E GSM mobile test solutions Data Sheet The first choice for GSM mobile service and repair Troubleshoot and find faults fast with the Agilent Technologies 8922S GSM MS service test set. Use it to reduce false failures with a test set that combines versatility with ease-of-use.

Contextual Info: March 1992 Edition 1.0A FUJITSU DATA SHEET MB834200B CMOS 4M-Bit Mask Read Only Memory The Fujitsu MB834200B is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits. It has TTL-compatible I/O 3-state output level with full-static operation i.e., no clock

mb83

Abstract: O26U
Contextual Info: March 1992 Edition 1.0A — FUJITSU DATA SHEET MB834200B CMOS 4M-Bit Mask Read Only Memory The Fujitsu MB834200B is a CM OS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits. It has TTL-compatible I/O 3-state output level with full-static operation i.e., no clock

1C13A

Abstract: 1C13 DTS090133SUDC-P5-S OTS080133SUDC-PS-SZ
Contextual Info: C U I IN C SPEC NO: PART NO: DTS090133SUDC-P5-: UNIT: mm PAGE NO: 1 o f 6 DATE: 10/27/00 All information contained herein applies only to the above listed part number. Other versions of this part number with electrical or mechanical variations are available. Contact CUI Inc. for further assistance. 9615 SW Allen Blvd., Ste. 103, Beaverton OR 97005

5082-2815

Abstract: 5082-2970 diode hp 2835 schottky 5082-2997 5082-2813 5082-2912 diode hp 2811 diode 5082-1001 diode 5082-1002 1N5712
Contextual Info: W K3Ì HEWLETT lb"HM PACKARD Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics

CKG57N

Abstract: tdk specification DC100V DC250V DC630V H63A TDK X7R MEGA CAP tdk code label 2E105 pc 40 tdk
Contextual Info: &TDK SPECIFICATION FOR TDK MULTILAYER CERAMIC CHIP CAPACITORS DWG.NO. CUSTOMER Digi Key Corporation . C2004-579 DATE ISSUED Mar. 24, 2004 TDK ITEM Mega Cap Series TDK ENGINEERING SIGNATURE D R A W BY DATE a , CHECKED BY O k APPROVED BY „ & - i —

Contextual Info: 2N 5179 N PN S IL IC O N RF S M A L L - S I G A L T R A N S IS T O R GENERAL DESCRIPTION 2N 5179 is designed for use in high gain, low-noise amplifier , oscillator and mixer circuits. It is also suitable for UHF converter applications. It features high gain-bandwidth product, low noise

D24844

Contextual Info: SHARP 1 SPEC No. E L 0 7 8 0 3 8 I SSUE: Nov. 10 1995 To : S P E C 1 F 1 C A T 1 ON S Product Type 1 6M h it MA S K ROM LH5B7RXX Model Ho. CLH53B16ROON jRThi* spécifications contains 14 pagea including the cover rad appendix. I f you have any objections, please contact us before issuing purchasing order.

Contextual Info: 10 NO TE : 1. M A T E R I A L : HOUSING GLAS 0.10 1.20 *-0.12 : LIQUID C R Y S T A L P O LY M E R , RILLE D , U L 9 A - V 0 , COLOR: B L A C K TERM INAL : PHOSPHOR BRONZE M ETAL SH ELL : S T AIN LESS S TE E L LINISH: TERM INAL:CONTACT : 0. 38AM MIN. G OLD O VER 1.27AM MIN NIC K E L U N D E R P L A T E .

fmri

Contextual Info: TH I S DRAW ING IS COPYRIGHT UNPUBLI SHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL PUBLICATION RIGHTS 20 LOC REV I S IONS D I ST RESERVED. LTR DESCRIPTION 0 1 R E L E A S E D F J A O - 0 3 7 9 - 0 3 R E V I S E D E C R - I 0 5 7 0 7 - 0 2 DWN DATE

PLL200

Abstract: pll2001 R 2733 the pll200
Contextual Info: fUPC PLL200 NIPPON PRECISION CIRCUITS LTD. • PIN Description i of 2 PI N n a m e X in (1) X o u t (2) Function These pins are connected to terminals of an external pallarel resonant crystal. XIN may also serve as input for an externaly-generated reference signal.