EC 1030 DIM Search Results

Contextual Info: Submin-Röhre indirekt geheizt Submin-tube indirectly heated TELEFUNKEN EC 1030 EC 1031 UHF-Triode Vorläufige technische Daten • Tentative data Zwischenschichtfreie Spezialkathod e D ie S p e z ia lk a th o d e d ie se r R öhre schließt d a s Entstehen eine r störenden Zwischenschicht selbst

C2705

Abstract: rehm aircell 21945
Contextual Info: www.teleqaertner.com 125-120 12.5 í to •ai Mechanical characteristics Mechanische Eigenschaften cable group Kabelgruppe © 1030 A F- FR N C -B LOW LOSS, 58CRT7 LOW LOSS, AIRCELL 5, EC 200, SPEEDF0AM 200 HFJ, WCX200 interfac e dim ensions acc. to assem b ly code

EC1030

Abstract: 1501a RK 100 TELEFUNKEN
Contextual Info: Submin-Röhre indirekt geheizt Submin-tube indirectly heated TELEFUNKEN EC 1030 EC 1031 U H F -T rio de Vorläufige technische Daten • Tentative data Zwischenschichtfreie Sp ezialkathode D ie S p e z ia lk a th o d e d ie se r R öhre schließt d a s Entstehen eine r störenden Zwischenschicht selbst

MIL-STD-883C

Abstract: marking jh mil-std-202 204
Contextual Info: Quadrature Hybrids Space Qualified JH-Series Electrical S p ec ific a tio n s JH-709 JH-708 P a r t# Frequency Range 4-21 MHz 900-1030 MHz Insertion Loss 1 dB Max 0.5 dB Max Isolation 18 dB Min 18 dB Min Amplitude Balance 3 dB Max 1.2 dB Max VSWR All Ports

FIP6C13

Abstract: FIP7B13 NEC FIP FIP5B15 FIP6F13 FIP6A13 FIP20X2AC FIP6D15 FIP11F10 FIP5D8
Contextual Info: FIP Products Selection Guide August 1994 1994 NEC Electronics Inc. All rights reserved. Printed in U.S.A. FIP is a registered trademark of NEC Corporation. 1 NEC’s FIP Panels Perform the Crucial Role of Conveying Accurate Information 2 Features •

S 1040 smd

Abstract: 8239 Diode IR 8294 TEMT1000 TEMT1020 TEMT1030 TEMT1040 TSML1000 EC 1030
Contextual Info: TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight

Contextual Info: TEMD1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon PIN Photodiode TEMD1000 Description TEMD1020 TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.

M2D068-BF

Abstract: M4S068-BF W4D200-CI14 W2D200-CI18 A2D200-AI18 068-BF ak38 M4D068-BF a4s 43 A2D200-AK18
Contextual Info: Information AC axial fans AC centrifugal S-Range, Ø 200 *4D 200 1 M4D068-BF 3 *4S 200 M4S068-BF 4 2650 3000 2650 3000 1450 1700 1370 1600 65 60 60 75 22 20 30 26 0,19 0,12 0,28 0,31 0,08 0,06 0,21 0,18 -1,5/ 400 1,5/ 400 - 140 140 150 150 70 90

Contextual Info: TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight

Contextual Info: TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight

TEMD1000

Abstract: TEMD1040 TEMD1020 TEMD1030 TSMF1000 TSML1000
Contextual Info: TEMD1000/1020/1030/1040 Vishay Semiconductors Silicon PIN Photodiode TEMD1000 Description TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.

C2705

Abstract: J01150A0641 aircell5
Contextual Info: www.teleqoertner.com 125-120 7157 Fax: +49 125-0 Mechanische Eigenschaften cable group Kabelgruppe interface dimensions acc. to assembly code centre conductor outer conductor mating life coupling torque Steckgesicht nach Montageanleitung Innenleiter Außenleiter

Contextual Info: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome

Contextual Info: TEMD1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon PIN Photodiode TEMD1000 Description TEMD1020 TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.

S 1040 smd

Abstract: TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
Contextual Info: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

TSML1020

Abstract: TEMT1000 TSML1000 TSML1030 TSML1040
Contextual Info: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

S 1040 smd

Contextual Info: TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight

Contextual Info: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome

Photointerrupter

Contextual Info: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

Contextual Info: TEMT1000/1020/1030/1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.

TEMD1000

Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
Contextual Info: TSMF1000/1020/1030/1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome

S 1040 smd

Abstract: 1030 mhz TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
Contextual Info: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

FIP16J5R

Abstract: FIP20D6R FIP16B13AR FIP4E8BS FIP16J5AR FIP16B13 FIP4Y8S FIP4Q8S FIP4A8DS FIP6A
Contextual Info: Table 1 For Data Terminal and Others 2 A lpha-N um eric type ►Dimisèswôns Type No. No. of Digits Fig. No. e.H C.W (mm) (mm) N/l Mi/ ay FIP6A8BR W few TOTOW W TO TO TO TO TO TO ft. w, m, 4s, w, yj. tu. «y. tw, * , P.H (mm) P.L (mm) P.T (mm) L.P (mm)

Contextual Info: R EV ECN. NO. A EDIQÄO INICIAL B NOVO CÓDIGO APP DATE Unit: mm. Tolerances: ±0.05 mm Reference dimension for PCB layout HOW TO ORDER: ICC4296CDR T E C H N IC A L C H A R A C T R IS T IC S 3. Electrical Characteristics 5. Environmental Characteristics Number of contacts: 6 pins