ECB1 Search Results

Contextual Info: www.eLED.com Package Dimensions P/N: ECB143S 5.6mm x 3.0mm SURFACE MOUNT LED LAMP Notes: 1. All dimensions are in millimeters inches . 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.

Contextual Info: www.eLED.com Package Dimensions P/N: ECB145S 5.0mm x 5.0mm SURFACE MOUNT LED LAMP Notes: 1. All dimensions are in millimeters inches . 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.

Contextual Info: www.eLED.com Package Dimensions P/N: ECB109S 3.5X2.8MM BLUE SMD LED Notes: 1. All dimensions are in millimeters inches . 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.

Contextual Info: www.eLED.com Package Dimensions P/N: ECB142S 8.0mm X 7.2mm X 5.3mm SMD LED Notes: 1. All dimensions are in millimeters inches . 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.

ECB109S

Contextual Info: www.eLED.com Package Dimensions P/N: ECB109S 3.5X2.8MM BLUE SMD LED Notes: 1. All dimensions are in millimeters inches . 2. Tolerance is r0.25(0.01") unless otherwise noted. 3. Specifications are subject to change without notice. Emitting Color Emitting Material

Contextual Info: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as

xa3b

Contextual Info: SXA-389B Z SXA-389B(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features

Xa2 TRANSISTOR

Abstract: SXH-189 AN023
Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

C0603COG500-680JNE

Abstract: SRF-1016 C0603COG500-101JNE SRF-2016
Contextual Info: SRF-1016 Z 65MHz to 300MHz Silicon Germanium IF Receiver SRF-1016(Z) Preliminary 65MHz to 300MHz SILICON GERMANIUM IF RECEIVER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: TSSOP, 16-Pin, 5.0mmx6.4mmx1.0mm Product Description Features RFMD’s SRF-1016 is a quadrature demodulator RFIC designed for UHF

1900mhz

Abstract: CL10B103KBNC LL1608-FS27NJ SGL-0263
Contextual Info: SGL-0263 Z SGL-0263(Z) 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features

rohm mch

Abstract: ECB-100607 SGA-6589 SGA-6586 Germanium Amplifier w061 PA DRIVER AMPLIFIER SGA6589 AN012 EAN-101613
Contextual Info: DESIGN APPLICATION NOTE - AN012 SGA-6589 Wideband 50-1000 MHz Driver Circuit Abstract New Silicon / Germanium amplifier gain blocks exhibit a combination of wide bandwidth, high gain,IP3 and low noise figure. The SGA6589 is a medium power gain block for which a versatile,

toko 5c

Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
Contextual Info: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)

CGA-3318

Abstract: CGA6618 CGA-6618 CGA-6618Z ETC1-1-13 SOIC-08 ETC-1-1-13 CGA-6681 macom marking
Contextual Info: CGA-6618 Z CGA-6618(Z) Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s CGA-6681(Z) is a high performance GaAs HBT MMIC Amplifier. Designed

OV10630

Abstract: GCM32ER71C226KE19L
Contextual Info: DS90UB913A-CXEVM & DS90UB914A-CXEVM REV A User's Guide User's Guide Literature Number: SNLU135 JUNE 2013 Chapter 1 SNLU135 – JUNE 2013 Introduction 1.1 Overview The Texas Instruments DS90UB913A-CXEVM & DS90UB914A-CXEVM REV A Evaluation Modules EVM provides an easy way to evaluate the operation and performance of the DS90UB913AQ /

transistor 016h

Contextual Info: Standard Products UT80CRH196KDS Microcontroller Advanced Datasheet March 25, 2002 INTRODUCTION q 20MHz 16-bit Microcontroller compatible with industry standard’s MCS-96 ISA - Register to Register Architecture - 1000 Byte Register RAM q Three 8-bit I/O Ports

Intel 8081

Contextual Info: áç XRT82L34 PRELIMINARY QUAD T1/E1/J1 LINE TRANSCEIVER WITH CLOCK RECOVERY AND JITTER ATTENUATOR DECEMBER 2000 REV. P1.0.5 GENERAL DESCRIPTION The XRT82L34 is a fully integrated Quad four channels short-haul line interface unit for T1(1.544Mbps) 100Ω and E1(2.048Mbps) 75Ω or 120Ω applications.

Intel MCS-96

Contextual Info: Standard Products UT80CRH196KD Microcontroller Datasheet DEH March 1999 I ß i ß S l i 6 T H ö i 16 &¥ S Y £ ü S FEATURES INTRODUCTION 20MHz 16-bit M icrocontroller compatible with Intel’s MCS-96 ISA - Register to Register Architecture - 1000 Byte Register RAM

marking code sirenza

Abstract: macom marking
Contextual Info: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration

rohm surface mounted transistor series

Abstract: Z1 SOT343 GAS105
Contextual Info: AdvancedPreliminary Information Product Description Sirenza Microdevices’ SGA-8143 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8143 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides high

XA2 MMIC

Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Sirenza amplifier SOT-89 Marking

Abstract: .XA2
Contextual Info: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

1485C

Abstract: SE 194 Sirenza amplifier SOT-89
Contextual Info: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Contextual Info: Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

XA2 MMIC

Abstract: Xa2 TRANSISTOR
Contextual Info: Preliminary Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular