ECH 42 Search Results

YJ1200

Abstract: ech3b 200T potential divider
Contextual Info: ECH 3 msx35 1 1 ECH 5 Triode hexode max 95 The ECH 3 is a variable-m u frequency-changer, constructed on the principle of the triode-hexode and th u s consisting o f a hexode — the frequency-changer proper — a n d a triode to function as oscillator. B oth units are m ounted round a common cathode, of

ECWU1H104JB9

Abstract: ECWU1H103JB5 ECHU1C223JB5 Panasonic PPS film PCF1044TR-ND 4833 ECWU1H683JB9 ECW-U1C224JB9 ECWU1C334JB9 ECWU1H473JB5
Contextual Info: Outer Electrode Element stacked Surface Mount Film Capacitors ECW-U (PEN Film, Standard Type) & ECH-U (PPS Film, High Grade Type) • High moisture resistance. APPLICATIONS: Type ECH-U: • Time constant • Filtering • Oscillation and resonance. Type ECW-U: • Coupling • By-pass • General purpose.

working of induction potentiometer

Abstract: ECH 42 POTENTIOMETER 47KA KSS oscillator ECH42 induction heater circuit diagram ech 81 induction heating oscillator circuit ECH 81 AN Eaf42
Contextual Info: ECH 42 ECH 42 Triode-hexode frequency ch a n ge r Fig. 1 Normal and X -ray photographs of the EC H 42 approxim ately actual size . T he E C H 42 is a frequency changer which, like th e E C H 41, is designed as a triode liexode, b u t various features, including a screen fitted round the

SSP4N80A

Abstract: sec ssp4n80a
Contextual Info: Advanced SSP4N80A Power MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T ech n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = 4 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

oszillator

Abstract: S276 UV 471 ech3b ABB CT
Contextual Info: ECH 3 ECH 3 Triode-Hexode max 36 Die R öhre E C H 3 is t eine M ischröhre m it v e rän d e rlic h er S te ilh e it n a c h dem P rin z ip d e r T riode-H exode. Sie b e ste h t m ith in aus der K o m b in atio n einer H exode als d e r eigentlichen M ischröhre u n d einer

Contextual Info: CS RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION ZENER SILICON RECTIFIER VOLTAGE RANGE-100 to 330 Volts CURRENT-0.5 Ampere FEATURES * High reliability * Low leakage * Low forward voltage drop * Excellent clamping capability DO-41 M ECH AN ICAL DATA * Case: Molded plastic

Contextual Info: CRBCTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FAST RECOVERY RECTIFIER VOLTAGE RANGE-50 to 600 Volts CURRENT-1.0 Ampere FEATURES * Low cost * Low leakage * Low forward voltage drop * High current capability DO-41 M ECH AN ICAL DATA * Case: M olded plastic

Contextual Info: ERECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SILICON RECTIFIER VOLTAGE RANGE-50 to 600 Volts CURRENT-6.0 Amperes FEATURES * Low cost * Low leakage * Low forward voltage drop * High current capability * High surge current capability M ECH AN ICA L DATA * Case: Molded plastic.

rt81

Contextual Info: CRBCTRON iSEMICONDUCTOR TECHNICAL SPECIFICATION RT810 THREE-PHASE AUTOMOTIVE RECTIFIER VOLTAGE RANGE-50 to 1000 Volts I CURRENT-8.0 Amperes FEATURES * Low cost * Low leakage * Low forward voltage drop * High current capability M ECH AN ICA L DATA * Case: Molded plastic

Contextual Info: s C3 RECTROM SEMICONDUCTOR TECHNICAL SPECIFICATION ZENER SILICON RECTIFIER VOLTAGE RANGE-100 to 330 Volts : CURRENT-0.5 Ampere FEATURES * High reliability * Low leakage * Low forward voltage drop * Excellent clam ping capability DO-41 M ECH A N ICA L DATA

Contextual Info: 105 220v 6 +105°C Extended Life Surface Mount Chip Aluminum Electrolytic Capacitors ECH NEW! FEATURES • Wide Capacitance Range .1 to 220 µF ■ Solvent Proof ■ Operating Voltage Range: 6.3 WVDC to 50 WVDC ■ Extended Life SPECIFICATIONS Capacitance Tolerance

Delco Electronics cross reference

Contextual Info: VLSI T ech n o lo g y, in c . AOVAN' VM007 DATA ENCRYPTION PROCESSOR FEATURES DESCRIPTION • Complete cryptographic processing system on a single chip Class 3 ESD protection above 4000V • Supports clock frequencies to 30 MHz Pending validation by National

Contextual Info: ERECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION AUTOMOTIVE RECTIFIER VOLTAGE RANGE-50 to 1000 Volts CURRENT-35 Amperes FEATURES * * * * Low Low Low High cost leakage forward voltage drop current capability RA M ECH AN ICAL DATA * Copper heat sink * Tin-plated slug easy for soldering

kbl 610

Abstract: KBPC6006 KBPC606 KBPC802 d041 gi D041 KBPC600 KBPC601 KBPC610 KBPC804
Contextual Info: Data Sheet 6.0 Amp SINGLE PHASE SILICON BRIDGE Semiconductor di M echanical Dim ensions Description o T -.040 < 0 .750 Min. 1 ] I 25" M ech anical Data: W eight - 0.3 Ounces. M ounting Torque _5.1 lbs. M ounting Position - Any._ Features

DP-45

Abstract: pv41
Contextual Info: PRELIMINARY IDT7MPV4170 IDT7MPV4171 IDT7MPV4172A IDT7MPV4173 64K/128K/256K/512K x 36 SYNCHRONOUSSRAM MODULE FAMILY In tegrated D e v ice T ech n olo gy , l i e . FEATURES: DESCRIPTION: • Pin compatible flow-through synchronous SRAM module family • 168 position angled DIMM Connector,

IDT79R4000

Abstract: 74fbt2827
Contextual Info: 256KB/1MB/4MB IDT79R4000 SECONDARY CACHE MODULE BLOCK FAMILY PRELIMINARY IDT7MP6074 IDT7MP6084 IDT7MP6094 Integrate d D evice T ech n ology, Inc. FEATURES: DESCRIPTION: • The IDT7M P6074 is a 256 kilobyte IDT79R4000 secon­ dary cache module block constructed on a multilayer epoxy

Contextual Info: Integrated D evice T ech no logy, Inc. HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM PRELIMINARY IDT7012 FEATURES: DESCRIPTION: • High-speed access - Military: 35/45/55/70ns max. - Commercial: 25/35/45/55ns (max.) • Low-power operation - IDT7012S Active: 400mW (typ.)

925b

Abstract: RG-179 RG-195 RG-55 UBJ226 rg400 bnc trompeter TAI-123
Contextual Info: DATA QKTAINSO IN THIS DQQJM&fT IS PROPRIETARY TO TRPffETEB B-ECHŒHICS INC. AM SHALL NOT BE DISO.DSB), ŒPIBD DR USB} R K PROQJREHBfT CF HUUFACITJRE VnVOJT EXPRESS WUTTBJ PBWISSION, REVISIONS DESCRIPTION BDM SHEET 2; ITEM 37 WAS 13164 B-1613-2B CRIMP SLEEVEj

Contextual Info: life Integrated D e v jc e T ech n ology, i i c . 3.3V CMOS 1-BITTO 4-BIT IDT74ALVCH16832 ADDRESS REGISTER/DRIVER ADVANCE INFORMATION WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - DESCRIPTION: 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps

VL82C100

Abstract: VL82C100QC 74ls612 8254 TIMER cascading VL82C100-QC ta 8259 h VL82C10 TI 74LS612 dma controller chip memory mapper
Contextual Info: V L S I T ech no lo gy , in c . VL82C100 PC/AT-COMPATIBLE PERIPHERAL CONTROLLER FEATURES DESCRIPTION • Fully compatible with IBM PC/AT-type designs The VL82C100 PC/AT-Compatible Peripheral Controller replaces two 82C37A Direct Memory Access Controllers, two 82C59A Interrupt

Contextual Info: C RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION THREE-PHASE AUTOMOTIVE RECTIFIER VOLTAGE RANGE-50 to 1000 Volts CURRENT-8.0 Amperes FEATURES * L o w cost * Low leakage * Low forward voltage drop * High current capability RT-8 5.20 M ECH AN ICAL DATA * Case: M olded plastic

IDT7MP6104

Contextual Info: 128KB/256KB SECONDARY CACHE MODULE FOR THE INTEL i486 “ IDT7MP6104 IDT7MP6105 Integrated D evice T ech n olo g y, Inc. FEATURES DESCRIPTION • 128KB/256KB direct mapped, write-through, non-sectored, zero-wait-state secondary cache module • Ideal for use with ¡486-based systems

Contextual Info: Hhtegiated D ev ize T ech n ology, l i e . FAST CMOS 18-BIT UNI VERSAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS IDT74FCT16601AT/CT/ET IDT74FCT162601 AT/CT/ET FEATURES: DESCRIPTION: • Common features: The FC T 16601T and FC T162601T 18-bit registered trans­

Contextual Info: FAST CMOS 16-BIT BUS IDT54/74FCT16652T/AT/CT/ET IDT54/74FCT162652T/AT/CT/ET TRANSCEIVER/ REGISTERS Integrated D e v r e T ech n ology, Inc. FEATURES: • Common features: - 0.5 MICRON CM O S Technology - High-speed, low-power CMOS replacement for ABT functions