ECH 81 AN Search Results

ECH81

Abstract: ECH 81 Mischstufen VEB Funkwerk Erfurt ERFURT oszillator ruf 33 UCH81 "WF Berlin" WF Berlin
Contextual Info: ELEKTRONENRÖHREN ECH 81 6 Ai 8 UCH 81 19 D 8 TRIODE — HEPTODE für re g e lb a re M ischstu fen o d e r g e tren n te H F -, Z F - und N F-V e rstä rk u n g T m ax. A b m e ss u n g e n * * V O R LÄ U FIG E T EC H N IS C H E H e iz u n g : DATEN E C H 81

RC3T

Abstract: RESISTANCE RC3T ech81 ech 81 Radiotechnique G264 ECH-81
Contextual Info: TRIO D E HEPTODE ECH 81 C O N V E R T IS S E U S E D E FR ÉQ U EN C E C A R A C T É R IST IQ U E S C h a u ffa g e : Indirect cathode isolée du filament , j Vf = 6,3 V A lim en tatio n du filam ent en sé rie ou en pa rallèle. ! If = 0,3 A C O N D IT IO N S N O M IN ALES D 'EM PLOI

ECH81

Abstract: ECH81 tube ech 81 tube ECH81 ech 81 philips ef 85 EBF80 amplificateur hf philips oszillator ks philips
Contextual Info: PHILIPS ECH81 TRIODE-HEPTODE f o r v a r io u s purposes i n P.M., FM/AM, A.M. and t e l e v i s i o n r e c e i v e r s TRIODE-HEPTODE pour a p p l i c a t i o n s d i v e r s e s dans des ré c e p ­ t e u r s F.M., F.M./A.M., A.M. e t de t é l é v i s i o n

LUCENT modulator

Abstract: CATV MODULATOR 152T Mach-Zehnder modulator microwave LUCENT phase modulator lithium niobate 40
Contextual Info: Advance Data Sheet April 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations x2821C Dual-Output Lithium Niobate Modulator and x2821CA Integrated Phase Dual-Output Lithium Niobate Modulator • Passive optical splitter ■ Low electrical return loss

ef 85

Abstract: EF85 ech 81 philips ECH81 ech 81 EF85 philips HG1 KO ET 81 K tube EF85 EF85 tube
Contextual Info: PHILIPS EF 85 R.F« PENTODE with variable mutual conductance for use as wide-band amplifier PENTHODE H.F. h. pente variable pour utilisation en amplificatrice & lar^e bande HF- PENTODE mit veränderlicher Steilheit zur Verwen­ dung als Breitbandverstärker

Contextual Info: ADVANCE 25 6 K x 18, 12 8 K x 32/ 36 LVTTL, PIPELINED ZBT SRAM MT55L256L18P, MT55L128L32P, MT55L128L36P 4.5Mb ZBTSRAM +3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization Fast cycle times: 7, 7.5, 8.5 and 10ns

working of induction potentiometer

Abstract: ECH 42 POTENTIOMETER 47KA KSS oscillator ECH42 induction heater circuit diagram ech 81 induction heating oscillator circuit ECH 81 AN Eaf42
Contextual Info: ECH 42 ECH 42 Triode-hexode frequency ch a n ge r Fig. 1 Normal and X -ray photographs of the EC H 42 approxim ately actual size . T he E C H 42 is a frequency changer which, like th e E C H 41, is designed as a triode liexode, b u t various features, including a screen fitted round the

UV LED 310 nm

Abstract: j 6815 PCH200 PCL200 PCL245 SWR LED PCL200C
Contextual Info: blE D DATA DISPLAY PRODUCTS 2b44SED □□OObM'i 2bB IDDP T - l 3/4 PCB M OUNT LEDs Standard, Single D ata D isp la y P roducts • Red, Amber, Amber/Yellow, Yellow, Green, Blue • Right Angle, 45 D egree Angle, or Vertical M ount LEDs • For D etailed LED Data, See Discrete Section, MODEL 200

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM M IC R O N I TO tW OLttffi INC. MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 8Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and O E# access times

Contextual Info: ADVANCE 12 8 K x 18, 64K x 32/ 36 LV T T L , P I P E L I N E D Z B T S R A M MICRON I TECHNOLOGY, INC. MT55L128L18P, MT55L64L32P, MT55L64L36P 2.25Mb ZBTSRAM +3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization

Contextual Info: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM MICRON I T O tW Q L ttffi INC. MT55L128L18F, MT55L64L32F, MT55L64L36F 2Mb ZBT SRAM 3.3V V dd, 3.3V I/O FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization

Contextual Info: Advance Data Sheet January 1999 group Lucent Technologies Bell Labs Innovations D171-Type FastLight PIN Photodetectors Features • Low -profile, 4-lead m ini-D IL package — S uitable fo r S O N E T applications ■ High perform ance — High speed <0.5 ns typical rise and fall tim e

Contextual Info: ADVANCE 128K x 18, 64Kx 32/36 LVTTL, FLOW-THROUGH ZBT SRAM MICRON I TECHNOLOGY, INC. MT55L128L18F, MT55L64L32F, MT55L64L36F 2.25Mb ZBT SRAM 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization

CI 7473

Abstract: pin diagram of 7473 sf.c amp 100-PIN MT58L128L32P1 MT58L128L36P1 MT58L128V32P1 MT58L128V36P1 MT58L256L18P1 MT58L256L18P1T-6
Contextual Info: PRELIM INARY MT58L256L18P1, MT58L128L32P1, MT58L128L36P1; MT58L256V18P1, MT58L128V32P1, MT58L128V36P1 4M b SYNCBURST SRAM 3 .3 V V dd, 3 .3 V or 2 .5 V I/O, Pipelined, Single-Cycle Deselect FEATURES Fast clock and OE# access times Single +3.3V +0.3V /-0.165V power supply Vdd

Contextual Info: AD VA NC E 12 8 K x 18, 64K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM MT55L128L18F, MT55L64L32F, MT55L64L36F 2.25Mb ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization

Contextual Info: 128K x 18, 64K x 32/36 3.3V I/O, PI PELI NED, DCD S Y N C B U R S T SRAM MICRON I TECHNOLOGY, INC. C V K I P D I I D C O Y I M O D U n O CD O i l MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5 T I A I UI n IV I 3.3V Supply, Pipelined, Double-Cycle Deselect Burst Counter and

Contextual Info: 64K X 18, 32Kx 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM MICRON I TECHNOLOGY, INC. SYNCBURST SRAM MT58LC64K18C5, MT58LC32K32C5, MT58LC32K36C5 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect FEATURES • • • • • • • • • •

Contextual Info: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED ZBT SRAM MICRON I T O tW Q L ttffi INC. MT55L128L18P, MT55L64L32P, MT55L64L36P 2Mb ZBT SRAM 3.3V V dd, 3.3V I/O FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization

Contextual Info: 64K x 18, 32K x 32/ 36 3. 3V I/O, P I P E L I N E D , S C D S Y N C B U R S T S R A M MICRON I TECHNOLOGY, INC. C V K I P D I I D C O Y I M O D U n O CD O i l MT58LC64K18D8, MT58LC32K32D8, MT58LC32K36D8 T I A I UI n IV I 3.3V Supply, Pipelined, Burst Counter and

3299c

Contextual Info: 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58LC128K18B4, MT58LC64K32B4, MT58LC64K36B4; MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 2Mb SYNCBURST SRAM 3.3V V dd , 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times

Contextual Info: ADVANCE 128Kx18>64Kx32/36 MICRON I Q w O T C D O i l | N D l r D I U 3.3V I/O, PI PELI NED, DCD S Y N C B U R S T SRAM MT58LC128K18C6, MT58LC64K32C6, MT58LC64K36C6 I D C T n O I A I UI n IV I 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect

9436e

Contextual Info: 64K x 18, 32K x 32/ 36 3. 3V I/O, F L O W - T H R O U G H S Y N C B U R S T S R A M MICRON I TECHNOLOGY, INC. MT58LC64K18B3, MT58LC32K32B3, MT58LC32K36B3 SYN CBU RS T SRAM 3.3V Supply, Flow-Through and Burst Counter FEATURES Fast access times: 8.5ns, 9ns, 10ns and 11ns

Contextual Info: M I C R I O 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED ZBT SRAM N TECHNOLOGY, INC. MT55L128L18P1, MT55L64L32P1, MT55L64L36P1 2Mb ZBT SRAM 3.3V V dd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 6ns, 7.5ns and 10ns

Contextual Info: ADVANCE MICRON I 256K ’512Kx64 SGRAM SODIMMs TECHNOLOGY, INC. SYNCHRONOUS GRAPHICS RAM DIMM mt2lg25664 K h MT4LG51264<K>H FEATURES PIN ASSIGNMENT (Front View) • 144-pin, small-outline, dual in-line m em ory m odule (DIMM) • 2MB (256K x 64) and 4MB (512K x 64)