D-12
Abstract: IRGBC20F
Text: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V
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IRGBC20F
10kHz)
O-220AB
D-12
IRGBC20F
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C-238
Abstract: D-12 IRGBF20F transistor c240 transistor C238
Text: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V
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IRGBF20F
10kHz)
O-220AB
C-242
C-238
D-12
IRGBF20F
transistor c240
transistor C238
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transistor C239
Abstract: C-238 D-12 IRGBF20F transistor c237 C-237 transistor c242 transistor C238
Text: Previous Datasheet Index Next Data Sheet PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGBF20F
10kHz)
O-220AB
C-242
transistor C239
C-238
D-12
IRGBF20F
transistor c237
C-237
transistor c242
transistor C238
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D-12
Abstract: IRGBC20F
Text: Previous Datasheet Index Next Data Sheet PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGBC20F
10kHz)
O-220AB
D-12
IRGBC20F
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D-12
Abstract: IRGBC20F
Text: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V
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IRGBC20F
10kHz)
O-220AB
D-12
IRGBC20F
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c252 transistor
Abstract: IRGPF20F C249
Text: PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V
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IRGPF20F
10kHz)
O-247AC
C-254
c252 transistor
IRGPF20F
C249
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transistor C238
Abstract: transistor c237 transistor c240 C-238 D-12 IRGBF20F transistor c242 c237 ge 239 c238 transistor
Text: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V
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IRGBF20F
10kHz)
O-220AB
C-242
transistor C238
transistor c237
transistor c240
C-238
D-12
IRGBF20F
transistor c242
c237
ge 239
c238 transistor
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c252 transistor
Abstract: IRGPF20F
Text: PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V
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IRGPF20F
10kHz)
O-247AC
C-254
c252 transistor
IRGPF20F
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C5320
Abstract: IRGBC20F D-12 mosfet 600v 10a to-220ab *gBC20f
Text: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V
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IRGBC20F
10kHz)
O-220AB
C5320
IRGBC20F
D-12
mosfet 600v 10a to-220ab
*gBC20f
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IRGPF20F
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGPF20F
10kHz)
O-247AC
C-254
IRGPF20F
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IRG4BC40W
Abstract: No abstract text available
Text: PD - 9.1654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC40W
IRG4BC40W
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IRG4PC40W
Abstract: No abstract text available
Text: PD -9.1656B IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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1656B
IRG4PC40W
IRG4PC40W
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IRG4BC30F
Abstract: 555 triangular wave
Text: Previous Datasheet Index Next Data Sheet PD - 9.1450 IRG4BC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC30F
O-220AB
O-220AB
IRG4BC30F
555 triangular wave
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IRG4PC30F
Abstract: No abstract text available
Text: 2002-03-11 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-256-85 IRG4PC30F IGBT TO-247 PD - 9.1459A IRG4PC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
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IRG4PC30F
O-247
IRG4PC30F
O-247AC
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IRG4PC50F
Abstract: No abstract text available
Text: PD - 9.1468B IRG4PC50F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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1468B
IRG4PC50F
O-247AC
O-247AC
IRG4PC50F
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IRG4PC30F
Abstract: No abstract text available
Text: PD - 9.1459A IRG4PC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PC30F
O-247AC
O-247AC
IRG4PC30F
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J200 mosfet
Abstract: SSH25N40 J200 SSH25N40A
Text: Advanced SSH25N40A P o w e r MOSFET FEATURES BVDSS — 400 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge RüS on = 0.2 £2 lD = 25 A ■ E xtended S afe O pe ra ting A rea
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SSH25N40A
J200 mosfet
SSH25N40
J200
SSH25N40A
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Untitled
Abstract: No abstract text available
Text: im SEM E IRF140 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 100 V V DSS 28A ID(cont) 0.077Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ 18.80 (0.740) ^ dia. ! • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE
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IRF140
300ms,
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IRFP254A
Abstract: No abstract text available
Text: IRFP254A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 250 V ^ D S o n = 0 . 1 4 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V
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IRFP254A
O-220-F-4L
DD3b33E
GG3b333
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Untitled
Abstract: No abstract text available
Text: IRFP450A A dvanced Power MOSEET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 14 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■
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IRFP450A
G03b332
0G3b333
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Untitled
Abstract: No abstract text available
Text: IRFP440A Advanced Power MOSEET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) 00
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IRFP440A
G03b332
0G3b333
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Power MOSFET P-Channel 250V 50A
Abstract: sfp9634 Power MOSFET SFP9634
Text: Advanced SFP9634 P o w e r MOSFET FEATURES B V DSS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge -2 5 0 V ^ D S o n — 1 - 3 Q lD ■ E xtended S afe O pe ra ting A rea
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SFP9634
-250V
O-220
Power MOSFET P-Channel 250V 50A
sfp9634
Power MOSFET SFP9634
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sfp9z34
Abstract: No abstract text available
Text: Advanced SFP9Z34 P o w e r MOSFET FEATURES B V DSS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ = ^ D S o n ID 175°C O pe re ting T em pe rature =
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SFP9Z34
O-220
sfp9z34
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D4825C
Abstract: H12WD a4s90 D4850C crydom series 1 CD489 H10D4890 D-482 P480V H10CA4850
Text: CRYD 0P1 co 31E D • 2542537 DDDGL.4D 7 « C R Y BULLETIN 802 F2^-3/ C a V D O C O M P A M N Y SERIES 1-HV SCR Output Solid-State Relays 8 Thru 90 Amp High Voltage, AC Output GENERAL DESCRIPTION Opto-lsolated 4000 VRMS ■ Zero Voltage Switching AC ■
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D6935
D4825C
H12WD
a4s90
D4850C
crydom series 1
CD489
H10D4890
D-482
P480V
H10CA4850
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