ED-44 DIODE Search Results

ED-44 diode

Abstract: LQ 36 A3935 A3935KED A3935KJP A3935KLQ JESD51-7 GLC LDO
Contextual Info: Data Sheet 26301.102b 3935 3-PHASE POWER MOSFET CONTROLLER — For Automotive Applications Package ED, 44-Pin PLCC Package JP, 48-Pin LQFP The A3935 is designed specifically for automotive applications that require high-power motors. Each provides six high-current gate drive

ED-44 diode

Abstract: A3935 A3935KED A3935KJP A3935KLQ JESD51-7 CA444
Contextual Info: Data Sheet 26301.102a 3935 3-PHASE POWER MOSFET CONTROLLER — For Automotive Applications Package ED, 44-Pin PLCC Package JP, 48-Pin LQFP The A3935 is designed specifically for automotive applications that require high-power motors. Each provides six high-current gate drive

Edd 44

Abstract: DIODE ED
Contextual Info: 1733 Reader's Spreadspg189-328:1570 Reader's Spreadspg189-328 1/27/09 4:44 PM Page 1 PMS 300 neg. Black neg. ED X bidirectional esd suppressor EU features circuit protection • • • • (16kV) IEC 61000-4-2 rating Surface mount package High component density

HLP30RG

Contextual Info: HITACHI/ OPTOELECTRONICS lflE D • 44^205 H LP20RG,H LP30RG,H LP40RG OOl Gñl b G a A IA s ¡R ED r-HH 3 Description H LP20RG , HLP30RG and HLP40RG are GaAIAs infrared em itting diodes with single heterojunction structure. T hey offer a wide range of wavelength and out­

A3925

Contextual Info: 39253 ADVANCED DATASHEET –-3/31/03 Subject to change without notice 36-pin QSOP Pkg. (LQ) or 44-pin PLCC Pkg. (ED) ABSOLUTE MAXIMUM RATINGS Load Supply Voltages, VBAT, VDRAIN , VSW ……………………………. –0.6 to 60 V Logic Supply Voltage, VDD ………-0.3 to 6.5 V

BH45-704A

Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
Contextual Info: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m ­ m en d ed m ax (V) ■d on re­ sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se

THC-4413

Abstract: sj 2907 4148 diode diode st 4148 TRANSISTOR 4148 THC-2894 THC-5818 THC-2369 THC-2369A THC-2945
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 1 0 0 % Probed Parameters TYPE D E S C R IP T IO N BVoo M in . Ic V o lts @ (mA) B V cto M in . Ic V o lts @ (mA) M jn. V o lts B V ebo *5 0 1 50 @ Ic

im 308-c

Abstract: ma47047
Contextual Info: M an A M P com pany PIN Diode Chips V 2.00 Features • • • • • • CERMACHIP glass o r Silicon D ioxide Passivation H erm etically Sealed CERMACHIP Design Fast Speed, Low Loss M icrowave Chips A ttenuator Chips Voltage Ratings to 1500 Volts W ide Range of PIN Characteristics

MA4SW110

Abstract: sp3t spt31 PIN Beam lead diod
Contextual Info: M an A M P com pany Monolithic PIN Diode Switches MA4SW110, MA4SW210, MA4SW310 V2.00 Features • Broad Bandw idth - S p eciied up to 20 GH z MA4SW110 J1 J2 - 0 0— W - Usable to 26 5 G H z • Low Insertion Loss/H igh Isolation • R ugged, Fu lly M onolithic, G lass En cap s u it e d

1N4474

Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
Contextual Info: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.

PIN photodiode responsivity 1550nm 1.1

Abstract: PIN photodiode InGaAs 1550nm PIN Photodiode 1550nm sensitivity photodiode 1550nm 4 Ghz InGaAs Photodiode 1550nm PIN photodiode responsivity 1550nm 2,5 GHz InGaas PIN photodiode flipchip PIN Photodiode 1310nm
Contextual Info: Obsolete Product – not recommended for new design LX3051 3.125 Gbps TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ LX3051 single die Coplanar Waveguide , 50 ohm High Responsivity Low Dark Current

Contextual Info: M a n A M P c o m p an y Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours

5082-2565

Abstract: hp 2817 hp 5082 2207 S3H 02 diode U1Z 07 u1z 99 hp 5082 2817 5082-2500 5082-2711 5082-2766
Contextual Info: COMPONENTS 5082 -2200 / 01/ 0 2 /0 3 5082 - 2207 / 08 / 09/10 5082 2 7 6 5 /6 6 5082 - 2774/75 5082 - 2 7 85/8 6 5082 - 2 7 9 4 /9 5 SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T PACKARD SCHOTTKY BARRIER DIODES FOR STRIPLINE, MICROSTRIP MIXERS

Schottky diode Die flip chip

Abstract: 0045E
Contextual Info: M an A M P com pany GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 Features • MA4E131712 Case Style 1198 Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection

DIODE ED 26

Abstract: 40170 5SDD If 8000 Vrrm 8000
Contextual Info: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking

DIODE ED 26

Abstract: 40170 5SDD If 8000 Vrrm 8000
Contextual Info: VRRM = 400 V IFAVM = 11350 A IFRMS = 17800 A IFSM = 85000 A VF0 = 0.74 V rF = 0.018 mΩ Rectifier Diode 5SDD 0120C0400 Doc. No. 5SYA1159-01 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking

17800

Abstract: 5SDD If 8000 Vrrm 8000 11350
Contextual Info: VRRM = 400 V IFAVM = 11350 A IFRMS = 17800 A IFSM = 85000 A VF0 = 0.74 V rF = 0.018 mΩ Rectifier Diode 5SDD 0120C0400 Doc. No. 5SYA1159-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking

Contextual Info: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking

Contextual Info: Series 50-170 A m p * DIODE* 9CRDIODE Modules High Thermal Efficiency These circuits provide complete power control in a single package, utilizing high thermal efficiency to assure long life and reliable performance. Twelve standard models provide 2500 Vrms

17300A

Contextual Info: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Ω Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance

MA4P709-150

Abstract: UHF Phase Shifter AG312 MA4PH451 MA47266 Microwave PIN diode phase shifter circulator 1N5767 MA4P709-985 pin diode limiter 3 ghz 1 watt
Contextual Info: Application Note M an A M P com pany Design With PIN Diodes AG312 By Gerald Hiller V 2.00 Introduction The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device w hose impedance, at these frequencies, is controlled by its DC

Contextual Info: a n A M P co m p a n y Surface Mount PIN Diodes MA4P Series V 2.00 SOT-23 Features • Surface M o u n tP a c k a g e • Low C a p a c ita n c e D io d e s • Low Loss Sw itch D iod es • Low D is t o r tb n A tte n u a to r D io d e s • F a s t Sw itching D iod es

SW TACT SPST

Contextual Info: JUfaCim m a n A M P com pany Monolithic PIN Diode Switches MA4SW100, 200, 300 Features • B ro a d b a n d P erfo rm a n ce: S p e cifie d 1-18 G H z I 's a b le 1-26 G H z S l’ST. SP O T , U sa b le 1-20 G H z (S P 3 T ) K • In sertio n I.oss 1.2 d B to IK G H z

Contextual Info: an A M P com pany PIN Diode Chips V 2.00 Features • C E R M A C H IP glass or Silicon Dioxide Passivation o • Herm etically Sealed C E R M A C H IP Design • Fast Speed, Lo w Loss M icro w ave Chips • Attenuator Chips • Voltage Ratings to 1500 Volts