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9CTI Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7 Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density	OCR Scan	PDF	ED1784MS 250ns EDI784MSV EDI784MSV50BB EDI784MSV50FB EDI784MSV50B8 EDI784MSV506C 24/32Pin 300MN 3530im 9CTI S28B 9CTI 10 pin ic EC017 EDJ7

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Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

OCR Scan

PDF

ED1784MS 250ns EDI784MSV EDI784MSV50BB EDI784MSV50FB EDI784MSV50B8 EDI784MSV506C 24/32Pin 300MN 3530im 9CTI S28B 9CTI 10 pin ic EC017 EDJ7