EDO DRAM 50NS 72-PIN SIMM Search Results

m7401

Abstract: 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns 1MB 4MB 60ns 70ns 1M x8 1GMM781000CNS-6 — | GMM781000CNS-7 1M x9 GMM791GOOCNS-6 J — I GMM791000CNS-7 4Mx8 GMM784000CS-6 4Mx9 GMM794000CS-6 1M x 32 H H GMM784000CS-7 GMM794000CS-7 I GMM7321OOOCS/SG-6 } I GMM732101OCS/SG-6

LG 2MX32 EDO simm module

Abstract: GMM732201 GMM732411OCNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— 1GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32

GMM732411

Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6

MT4D51232M-XX

Contextual Info: 256K, 512K x 32 DRAM SIMMs TECHNOLOGY, INC. MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32) • High-performance CMOS silicon-gate process

64Mx4

Contextual Info: 16Mx32, 50 - 70ns, SIMM 30A173-11 2 M-Densus High Density Memory Device 512 Megabit CMOS 3.3V EDO DRAM 256 Megabit CMOS 3.3V EDO DRAM 128 Megabit CMOS 3.3V EDO DRAM PRELIMINARY DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family

edo dram 50ns 72-pin simm

Abstract: edo dram 72-pin simms 64mb dram 72-pin simms 64mb BDQ30 64mb edo dram simm BDQ22 4c16m4 BDQ31 72 simm edo dram 64mb
Contextual Info: SL36 S/T 4C16M4F-AxxC 16M X 36 Bits (64MB) DRAM 72-Pin SIMM with Extended Data Out (EDO) FEATURES • GENERAL DESCRIPTION Performance range: Part # tRAC tCAC tRC The SiliconTech SL36(S/T)4C16M4F-AxxC is a 16M x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).

edo dram 50ns 72-pin simm

Contextual Info: UG216E32R4HSG T Data sheets can be downloaded at www.unigen.com 64M Bytes (16M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

SIMM DRAM 4Mx16

Abstract: milton smart modular edo dram 50ns 72-pin simm
Contextual Info: SMART SM5320830P4X6UU SM5320830D4X6UU Modular Technologies Preliminary 32MByte 8M x 32 DRAM Module - 4Mx16 based 72-pin SIMM with Voltage Regulators Features Part Numbers • • • • • • • • • • SM5320830P4X6UU SM5320830D4X6UU Configuration

edo dram 50ns 72-pin simm

Abstract: UG232W3264HSG
Contextual Info: UG232W3264HSG T Data sheets can be downloaded at www.unigen.com 128M Bytes (32M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM The UG232W3264HSG(T) is a 32Mbits x 32 EDO

128m simm 72 pin

Contextual Info: UG232E32R4HSG T Data sheets can be downloaded at www.unigen.com 128M Bytes (32M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

edo dram 60ns 72-pin simm

Abstract: edo dram 50ns 72-pin simm
Contextual Info: UG216E32R4HK S G(T) Data sheets can be downloaded at www.unigen.com 64M Bytes (16M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

Contextual Info: 256K, 512K x 32 DRAM SIMMs MICRON • IbCHNULUÜY. INC MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32)

bas 33 equivalent

Abstract: km44c4105bk EZ 720 kmm5364105bk
Contextual Info: KMM5364005BK/BKG KMM5364105BK/BKG DRAM MODULE KMM5364005BK/BKG & KMM5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KM M 53640 1 05BK is a 4M bit x 36

Contextual Info: SMART SM5320430P4X6UU SM5320430D4X6UU Modular Technologies Preliminary 16MByte 4M x 32 DRAM Module - 4Mx16 based 72-pin SIMM with Voltage Regulators Features Part Numbers • • • • • • • • • • SM5320430P4X6UU SM5320430D4X6UU Configuration

edo dram 50ns 72-pin simm

Abstract: 4bit Dynamic RAM HMD8M36M6E HMD8M36M6EG
Contextual Info: HANBit HMD8M36M6EG 32Mbyte 8Mx36 72-pin SIMM EDO with Parity Mode, 4K Ref. 5V Part No. HMD8M36M6E, HMD8M36M6EG GENERAL DESCRIPTION The HMD8M36M6E is a 8M x 36bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages and two CMOS 4M x 4bit Quad CAS DRAM in 28pin SOJ package mounted on

Contextual Info: KMM5368005BK/BKG KMM5368105BK/BKG DRAM MODULE KMM5368005BK/BKG & KMM5368105BK/BKG Fast Page with EDO Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS EDO DRAM FEATURES GENERAL DESCRIPTION The Samsung KMM53680 1 05BK is a 8M bit x 36 Dynamic RAM high density memory module. The

Contextual Info: KMM5364005BK/BKG KMM5364105BK/BKG DRAM MODULE KMM5364005BK/BKG & KMM5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M 53640 1 05BK is a 4M bit x 36 • Part Identification

EZ 720

Contextual Info: KMM5364005CK/CKG KMM5364105CK/CKG DRAM MODULE KMM5364005CK/CKG & KMM5364105CK/CKG Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53640 1 05CK is a 4Mx36bits Dynamic

Contextual Info: KMM5361205C2W/C2 WG DRAM MODULE 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS KMM5361205C2W/C2 WG DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361205CW/CWG to KMM5361205C2W/C2WG caused by PCB revision .

Contextual Info: UG28W3258HSG T 32M Bytes (8M x 32) 72Pin SIMM based on 8M X 8 DRAM Features General Description The UG28W3258HSG(T) is a 8,388,608 bits by 32 SIMM module. The UG28W3258HSG(T) is assembled using 4 pcs of 8Mx8 3.3V 4K refresh EDO DRAM in 50 Pin TSOP package mounted on a 72 Pin printed circuit

KM44C4104bk

Contextual Info: KMM5328004B K/B KG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N The Samsung KMM53280 1 04BK is a 8M bit x 32 FEATURES • Part Identification Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .

Contextual Info: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C