EDO DRAM 72-PIN SIMM 4 M Search Results

edo dram 50ns 72-pin simm

Abstract: UG232W3264HSG
Contextual Info: UG232W3264HSG T Data sheets can be downloaded at www.unigen.com 128M Bytes (32M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM The UG232W3264HSG(T) is a 32Mbits x 32 EDO

Contextual Info: UG8M163224QRR-6 Data sheets can be downloaded at www.unigen.com EDO MODE DRAM MODULE 64M Bytes 16M x 32 bits EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM

Contextual Info: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by

Contextual Info: UG28W3258HSG T 32M Bytes (8M x 32) 72Pin SIMM based on 8M X 8 DRAM Features General Description The UG28W3258HSG(T) is a 8,388,608 bits by 32 SIMM module. The UG28W3258HSG(T) is assembled using 4 pcs of 8Mx8 3.3V 4K refresh EDO DRAM in 50 Pin TSOP package mounted on a 72 Pin printed circuit

marking d432

Contextual Info: ADVANCE M T8LD432 X (S), M T16LD832(X)(S) 4 MEG. 8 MEG x 32 DRAM M OD ULE jU IIC R O N 4 MEG, 8 MEG x 32 DRAM MODULE 16, 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 72-Pin SIMM • JEDEC-standard pinout in a 72-pin single-in-line

MT16D832-6/7

Contextual Info: MICRON MT8D432 X , MT16D832(X) 4 MEG, 8 MEG x 32 DRAM MODULES DRAM MODULE 4 MEG, 8 MEG x32 I TECHNOLOGY, MC. 16, 32 MEGABYTE, 5V, FAST PAGE MODE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single-in-line memory module (SIMM)

Contextual Info: M ir -r a r n iS J I ^ MT2D T 132 e, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 DRAM MODULES 1,2, 4 MEG X 32 DRAM MODULE 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES OPTIONS PIN ASSIGNMENT (Front View) 72-Pin SIMM (DD-11) (DD-9) (DD-8) (DD-3) MARKING • Timing 52ns access; 15ns cycle

1Mx4 EDO RAM

Abstract: ESA1UN3241-60JS-S
Contextual Info: July 1997 Revision 1.0 data sheet ESA1UN3241-60JS-S 4MByte 1M x 32 CMOS EDO DRAM Module General Description The ESA1UN3241-60JS-S is a high performance, EDO (Extended Data Out) 4-megabyte dynamic RAM module organized as 1M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

1Mx4 EDO RAM

Abstract: ESA1UN3241A-60JS-S
Contextual Info: July 1997 Revision 1.0 data sheet ESA1UN3241A-60JS-S 4MByte 1M x 32 CMOS EDO DRAM Module General Description The ESA1UN3241A-60JS-S is a high performance, EDO (Extended Data Out) 4-megabyte dynamic RAM module organized as 1M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

simm EDO 72pin

Abstract: HMD8M36M24EG edo dram 72-pin simm 4 m edo dram 50ns 72-pin simm ess u17
Contextual Info: HANBit HMD8M36M24EG 32Mbyte 8Mx36 72-pin EDO with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M24EG GENERAL DESCRIPTION The HMD8M36M24EG is a 8M x 36bit dynamic RAM high density memory module. The module consists of twenty four CMOS 4M x 4bit DRAM in 24-pin SOJ packages mounted on a 72 -pin, double-sided, FR-4-printed circuit board.

MT4C4007JDJ

Contextual Info: ADVANCE MICRON MT9D136A X, MT18D236A X 1 MEG, 2 MEG x 36 DRAM MODULES DRAM MODULE 1 MEG, 2 MEG x 36 • TECHNOLOGY, INC. 4, 8 MEGABYTE, 5V, ECC, EDO PAGE MODE FEATURES • Four CAS# ECC pinout in a 72-pin, single-in-line memory module SIMM • High-performance CMOS silicon-gate process

MB811

Contextual Info: February 1997 Revision 1.0 data sheet ESA2UN321 1/4 -(60/70)(J/T)(G/S)-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN321(1/4)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3211 supports

MB811

Abstract: 4Mx8 dram simm
Contextual Info: February1997 Revision 1.1 DATA SHEET ESA8UN324 2/4 -(60/70)(J/T)(G/S)-S 32MByte (8M x 32) CMOS EDO DRAM Module General Description The ESA8UN324(2/4)-(60/70()J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA8UN3242 supports

MB811

Abstract: 4Mx8 dram simm
Contextual Info: October 1996 Revision 1.0 DATA SHEET ESA4UN324 2/4 -(60/70)(J/T)(G/S)-S 16MByte (4M x 32) CMOS EDO DRAM Module General Description The ESA4UN324(2/4)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out)16-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA4UN3242 supports

D013L

Abstract: mt8d432
Contextual Info: M IC R O N I i.i— r - . w LT MT8D432 X , MT16D832(X) 4 MEG, 8 MEG x 32 DRAM MODULES DRAM 4 MEG, 8 MEG x32 IM in n i II E IV IU U U L C 16, 32 MEGABYTE, 5V, FAST PAGE MODE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 72-pin, single-in-line memory module (SIMM)

TRAL110

Contextual Info: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet ESA2UN321 1/4 B-60(J/T)(G/S)-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN321 (1/4)B-60(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3211B supports

Contextual Info: PRELIMINARY MICRON MT2D T 132(X), MT4D(T)232(X) 1 MEG, 2 MEG x 32 DRAM MODULES I DRAM 1 MEG, 2 MEG x 32 R J I A n i •■ C IV IU U U L E Z 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO p a g e m o d e FEATURES 72-Pin SIMM (DD-11) 1 Meg x 32 - TSOP version (shown)

64mb edo dram simm

Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
Contextual Info: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s

64Mb simm

Abstract: VIL22 simm 64MB 72 simm dram
Contextual Info: 64MB 72 PIN EDO DRAM SIMM With 16Mx4 3.3VOLT TS16MED3260V Description Dimensions The TS16MED3260V is a 16M by 32-bit dynamic RAM module with 8pcs of 16Mx4 DRAMs Side Millimeters Inches assembled on the printed circuit board. A 107.95 ± 0.400 4.250 ± 0.016

Contextual Info: 128MB 72 PIN EDO DRAM SIMM With 16Mx4 3.3VOLT TS32MED3260V Description The TS32MED3260V is a 32M by 32-bit dynamic Side Millimeters RAM module with 16pcs of 16Mx4 DRAMs A 107.95 ± 0.400 assembled on the printed circuit board. B 44.4500 3.984 The TS32MED3260V is optimized for application to

Contextual Info: 128MB 72 PIN EDO DRAM SIMM With 16Mx4 3.3VOLT TS32MED3260V Description The TS32MED3260V is a 32M by 32-bit dynamic Side Millimeters RAM module with 16pcs of 16Mx4 DRAMs A 107.95 ± 0.400 assembled on the printed circuit board. B 44.4500 3.984 The TS32MED3260V is optimized for application to

dram 72-pin simm 128mb

Contextual Info: 128MB 72 PIN EDO DRAM SIMM With 16Mx4 3.3VOLT TS32MED3260V Description The TS32MED3260V is a 32M by 32-bit dynamic Side Millimeters RAM module with 16pcs of 16Mx4 DRAMs A 107.95 ± 0.400 assembled on the printed circuit board. B 44.4500 3.984 The TS32MED3260V is optimized for application to

Contextual Info: 128MB 72 PIN EDO DRAM SIMM With 16Mx4 3.3VOLT TS32MED3260V Description The TS32MED3260V is a 32M by 32-bit dynamic Side Millimeters RAM module with 16pcs of 16Mx4 DRAMs A 107.95 ± 0.400 assembled on the printed circuit board. B 44.4500 3.984 The TS32MED3260V is optimized for application to

TS16MED3260N

Contextual Info: 64MB 72 PIN EDO DRAM SIMM With 16Mx4 5VOLT TS16MED3260N Description Dimensions The TS16MED3260N is a 16M by 32-bit dynamic RAM module with 8pcs of 16Mx4 DRAMs Side Millimeters Inches assembled on the printed circuit board. A 107.95 ± 0.40 4.250 ± 0.016 The TS16MED3260N is optimized for application to