BCV49
Abstract: BCV48 B01M
Text: SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR BCV48 ✪ ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV49 PARTMARKING DETAIL – EE C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage
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BCV48
BCV49
-100mA,
-10mA,
-500mA,
-50mA,
20MHz
BCV49
BCV48
B01M
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Untitled
Abstract: No abstract text available
Text: BCV48 IS OBSOLETE PLEASE USE FCX705 SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR BCV48 ✪ ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV49 PARTMARKING DETAIL – EE C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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BCV49
BCV48
FCX705
BCV48
-10mA*
-100mA,
-10mA,
-500mA,
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BCV28
Abstract: BCV29 BCV48 BCV49 marking BCV NPN SOT89
Text: BCV28, BCV48 PNP Silicon Darlington Transistors • For general AF applications 1 • High collector current 2 3 2 • High current gain • Complementary types: BCV29, BCV49 NPN Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E SOT89 BCV48 EE
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BCV28,
BCV48
BCV29,
BCV49
BCV28
BCV28
BCV29
BCV48
BCV49
marking BCV
NPN SOT89
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SGS115
Abstract: MJE3311 ON632 BOW84 B0878 041K2 2SB750 87CI
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max (8) tf Max (8) TOper Max ee) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 BOX88 GT81 00 BOW84 BOW84 BOW84 MPS-A7S
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BOX88
BOW84
MPS-A76
MPSA76
2SB888
2SB977A
SGS115
MJE3311
ON632
B0878
041K2
2SB750
87CI
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2SC982
Abstract: TO226AA 92PU45 MPSU45 MPS-U45 2S0114 2S01140 2SC3132 b0477
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max tr Max tf Max TOper Max (Hz) (A) (8) (8) ee) 125M 75M 75M 75M 75M 75M 200M 200M 100M 125M 100n 500n 20u 500n 500n 500n 100n 100n 100n 100n
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MPSA14
040C1
040C2
040C3
BC517
BC517S
NS0151
MPSW13
2SC982
TO226AA
92PU45
MPSU45
MPS-U45
2S0114
2S01140
2SC3132
b0477
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Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design
Abstract: No abstract text available
Text: Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc. I consider myself fortunate that, as a fresh-out-of-school EE, I was able to start my electrical engineering career designing radio frequency RF front ends for what are now antiquated one-way
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1990s,
Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design
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EIAJ-4
Abstract: 7 pin mini din sp9812 sa06n12 diode sod 106 6 pin mini din power din plug U587 ferrite R40 8P 63
Text: EFD15 T2 L1 A +Vi T1 EE B 5 0504 C2 1812 C1 1812 D12 0805 SOD-106 C3 1812 3 -Vi R12 D1 UMD2 2 R6 1206 R9 0603 C4 1210 1206 R30 1206 8,9 D5 SOD-123 C35 U8 SOT-89 1 3 C20 C21 D4 D4 1210 1210 2 0805 C31 0805 D9DPAK DZ2 R59 1206 SOD-106/0805/1206 C32 0805 -Vo
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EFD15
OD-106
OD-123
OT-89
OD-106/0805/1206
OT-23
EIAJ-4
7 pin mini din
sp9812
sa06n12
diode sod 106
6 pin mini din
power din plug
U587
ferrite R40
8P 63
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2N6805
Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab
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2S81188
2S8891
2S8632K
SML3552
SML3575
SML3578
SML69501
SML69509
2N6805
2N6456
2N6803
20C36
2NJ771
RCA 2n6674
20C84
2N6617
2NJ771A
2N6525
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s-29130afja-tb
Abstract: 24C16a 24cxx AT93C56R S-93C46AFJ S-24C04B S-2900A S-29130ADPA S-93C46A S-93C46ADP
Text: Contents Features 1 Pin Assignment 1 Block Diagram 1 Instruction Set 2 Absolute Maximum Ratings 2 Recommended Operating Conditions 2 DC Electrical Characteristics 3 Rewriting Times 3 Pin Capacitance 3 AC Electrical Characteristics 4 Operation 5 Dimensions
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512-bit
S-2900A
S-2900A
64-word
s-29130afja-tb
24C16a
24cxx
AT93C56R
S-93C46AFJ
S-24C04B
S-29130ADPA
S-93C46A
S-93C46ADP
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BCV48
Abstract: BCV28 BCV29 BCV49
Text: BCV28, BCV48 PNP Silicon Darlington Transistors 1 For general AF applications 2 High collector current 3 High current gain Complementary types: BCV29, BCV49 NPN 2 VPS05162 Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E 4=C SOT89 BCV48
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BCV28,
BCV48
BCV29,
BCV49
VPS05162
BCV28
EHP00313
BCV48
BCV28
BCV29
BCV49
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Untitled
Abstract: No abstract text available
Text: BCV28, BCV48 PNP Silicon Darlington Transistors 1 For general AF applications 2 High collector current 3 High current gain Complementary types: BCV29, BCV49 NPN 2 VPS05162 Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E 4=C SOT89 BCV48
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BCV28,
BCV48
BCV29,
BCV49
VPS05162
BCV28
BCV48
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bcv48
Abstract: BCV 48 E6327
Text: BCV28, BCV48 PNP Silicon Darlington Transistors 1 For general AF applications 2 High collector current 3 High current gain Complementary types: BCV29, BCV49 NPN 2 VPS05162 Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E 4=C SOT89 BCV48
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BCV28,
BCV48
BCV29,
BCV49
VPS05162
BCV28
BCV48
BCV 48 E6327
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2S321
Abstract: 2SB646 2N5111 2n3063 ZTX50 LOW-POWER SILICON PNP 475 50K ROHM 2N1654 2N5857
Text: LOW-POWER SILICON PNP Item Number Part Number NB223XJ NB223YJ BC556P BC856BR BC856BR BC856BR BC856CR V BR CEO 10 15 20 - 25 2SB1234 2SB1235 2Nl196 2Nl197 BCY93 BCY94 ZTX504 BCY95 ZT189 BC311 ~~~~~~3 2SAll14 BCY22 BFX41 2N1922 2SAl158Y 2N1275 2N5111 BFR60 ~~J;~2B
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NB223XJ
NB223YJ
BC556P
BC856BR
BC856CR
O-236
2S321
2SB646
2N5111
2n3063
ZTX50
LOW-POWER SILICON PNP
475 50K ROHM
2N1654
2N5857
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. APE1117-HF-3 1A Low Dropout Positive Voltage Regulators Description Features Maximum dropout of 1.5V at full load current Fast transient response Output current limiting Built-in thermal shutdown Available packages: SOT223, TO252, SOT89
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APE1117-HF-3
OT223,
APE1117
OT-89
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transistor 117-33
Abstract: APE1117-50 TO-252-3L ape1117
Text: APE1117 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator Pb Free Plating Product Features General Description - 1.4V maximum dropout at full load current - Fast transient response - Output current limiting - Built-in thermal shutdown - Packages: SOT223, TO252, SOT89,
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APE1117
OT223,
APE1117
transistor 117-33
APE1117-50
TO-252-3L
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weight
Abstract: PLCC weight
Text: Package Outlines - Integrated Circuits Dimensions in mm 68-Pin PLCC Package Weight approx. 4.8 g 61 W rnjiJTi 10 -e 26 JUUUUUULTT 27 -2 5 * I 44-Pin PLCC Package Weight approx. 2.5 g 80-Pin QFP Plastic Package Weight approx. 1.61 g - 2 3 x 0 .8 = 18.4- 65 EE
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68-Pin
44-Pin
80-Pin
16-Pin
14-Pin
O-116
OT-89A
O-92UA
O-202
weight
PLCC weight
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR BCV48 ISSU E 3 - SEPTEMBER 1995_ 0 _ C O M P L E M E N T A R Y TY PE - BCV49 P A R T M A R K IN G D E T A IL - EE ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L VALUE UNIT V cbo -80 Collector-Emitter Voltage
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BCV48
BCV49
-100mA,
-100liA,
100mA,
-500mA,
300jis.
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J646
Abstract: samsung 649 o647
Text: PACKAGE DIMENSIONS Dimensions in Milimeters SOT-23 2 9 0 . 0 20 L SOT-89 ¿ 5 0 . 0 20 1 - Í — C 643 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters TO-92 T 0-92 L EE TO -92S T O -126 o 3 72-020 644 ELECTRONICS PACKAGE DIMENSIONS 645 ELECTRONICS
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OT-23
OT-89
O-92/TO-92S/TO-92L
J646
samsung 649
o647
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 3 - SEPTEMBER 1995_ O C O M PLEM EN TA R Y TYPE - B CV49 P A R T M A R K IN G D E T A IL - EE ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYMBOL VA LU E U N IT C o lle c to r -B a s e V o lt a g e V CBO
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-100p
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FCX749
Abstract: 3emitter bst52 FCX688B FCX689B FCX690B FCX692B FCX694B FCX696B FCX789A
Text: SOT89 HIGH GAIN TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-Emitter v CE say Max h :E Type v CBO V v CEO V ^C(cont mA mW FCX696B 250 FCX694B 120 250 500 1500 120 500 1500 FCX692B FCX690B 70 70 2000 1500 400/- 45 45 2000 1500 400/- FCX689B 20 20 3000 1500
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FCX696B
FCX694B
FCX692B
FCX690B
FCX689B
FCX688B
FCX796A
FCX795A
FCX792A
-500/ctor,
FCX749
3emitter
bst52
FCX789A
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Untitled
Abstract: No abstract text available
Text: SOT89 HIGH GAIN TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-E m itter v CE<sa t hf"E Type V ^Clcont) mA mW v CBO v CEO V P.ot M in/M ax Max at lc / Vce m A /V o lts Volts at lc / Iß mA H Typ MHz Part Mark Code NPN FCX696B 250 250 500 1500 500/- 100/5 0.25
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FCX696B
FCX694B
FCX692B
FCX690B
FCX689B
FCX688B
1500E
FCX604
BST51
BCV49
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N1055
Abstract: No abstract text available
Text: D A ì A b H tt. i TRIAC A C 1 D J M 1 A POWER MINI MOLD TRIAC DESCRIPTION PACKAG E DIMENSIONS The AC01DJM is all diffused type TRIAC granted RMS On-state in m illim eters Current 1 Amps, with rated voltages up to 400 volts. This is designed specifically to be driven by low-level logic in any
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AC01DJM
OT-89
N1055
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2sd1006-hk
Abstract: 2SD1007 2SB806 2SD1006 sot89 transistor JB 9e sot-89 2SD1007-HP SK FN 521
Text: NEC '> > ; = ! > h =7 > i> 7 . 9 S ilic o n T ra n s is to r 2SD1006,1007 o ^ -fv 7 4 ' < / r ^ 7 \ v ° -7 ^ iz y 2 S B 8 0 6 t = ¡ > 7 ° ' 9 > 9 U 0 O 2SB805, 1.5 + 0.1 * Ê # Ît* Æ :fê T a = 25 °C) 2SD1006 2SD1007 # »§• -t til m i 3 v- 9 9 ■
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2SD1006/1007
O2SB805,
2SB806
2SD1006
2SD1007
-fl50
PWS10
cycleS50
OT-89)
2sd1006-hk
2SD1007
2SB806
sot89 transistor JB
9e sot-89
2SD1007-HP
SK FN 521
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2SD1005
Abstract: b10 lek 2SB804 2SD100
Text: Silicon T ra n s is to r 2SD1005 f t W-MWÌ $ W i : mm 0 7 |-— t V o 2SB804 i 3 > 7° IJ y > ^ 'J Titm T" l ^ t . o ë ‘x > i f t i Î Œ, iHjhF'E ”(?~'f~0 PT = 2.0 W (0.7 mmX 16 cm2- t e 7 Ì VCEo > 80 V, hFE = 200 TYP. (Ic = 100 mA) »& -9 - ^ î _ x pBH Œ
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2SD1005
2SB804
OT-89)
PWS10
cycleS50
2SD1005
b10 lek
2SD100
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