EE SOT89 Search Results

BCV49

Abstract: BCV48 B01M
Contextual Info: SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR BCV48 ✪ ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV49 PARTMARKING DETAIL – EE C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage

Contextual Info: BCV48 IS OBSOLETE PLEASE USE FCX705 SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR BCV48 ✪ ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV49 PARTMARKING DETAIL – EE C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

BCV28

Abstract: BCV29 BCV48 BCV49 marking BCV NPN SOT89
Contextual Info: BCV28, BCV48 PNP Silicon Darlington Transistors • For general AF applications 1 • High collector current 2 3 2 • High current gain • Complementary types: BCV29, BCV49 NPN Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E SOT89 BCV48 EE

weight

Abstract: PLCC weight
Contextual Info: Package Outlines - Integrated Circuits Dimensions in mm 68-Pin PLCC Package Weight approx. 4.8 g 61 W rnjiJTi 10 -e 26 JUUUUUULTT 27 -2 5 * I 44-Pin PLCC Package Weight approx. 2.5 g 80-Pin QFP Plastic Package Weight approx. 1.61 g - 2 3 x 0 .8 = 18.4- 65 EE

Contextual Info: SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR BCV48 ISSU E 3 - SEPTEMBER 1995_ 0 _ C O M P L E M E N T A R Y TY PE - BCV49 P A R T M A R K IN G D E T A IL - EE ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L VALUE UNIT V cbo -80 Collector-Emitter Voltage

J646

Abstract: samsung 649 o647
Contextual Info: PACKAGE DIMENSIONS Dimensions in Milimeters SOT-23 2 9 0 . 0 20 L SOT-89 ¿ 5 0 . 0 20 1 - Í — C 643 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters TO-92 T 0-92 L EE TO -92S T O -126 o 3 72-020 644 ELECTRONICS PACKAGE DIMENSIONS 645 ELECTRONICS

SGS115

Abstract: MJE3311 ON632 BOW84 B0878 041K2 2SB750 87CI
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max (8) tf Max (8) TOper Max ee) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 BOX88 GT81 00 BOW84 BOW84 BOW84 MPS-A7S

2SC982

Abstract: TO226AA 92PU45 MPSU45 MPS-U45 2S0114 2S01140 2SC3132 b0477
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max tr Max tf Max TOper Max (Hz) (A) (8) (8) ee) 125M 75M 75M 75M 75M 75M 200M 200M 100M 125M 100n 500n 20u 500n 500n 500n 100n 100n 100n 100n

Contextual Info: SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 3 - SEPTEMBER 1995_ O C O M PLEM EN TA R Y TYPE - B CV49 P A R T M A R K IN G D E T A IL - EE ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYMBOL VA LU E U N IT C o lle c to r -B a s e V o lt a g e V CBO

Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

Contextual Info: Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc. I consider myself fortunate that, as a fresh-out-of-school EE, I was able to start my electrical engineering career designing radio frequency RF front ends for what are now antiquated one-way

EIAJ-4

Abstract: 7 pin mini din sp9812 sa06n12 diode sod 106 6 pin mini din power din plug U587 ferrite R40 8P 63
Contextual Info: EFD15 T2 L1 A +Vi T1 EE B 5 0504 C2 1812 C1 1812 D12 0805 SOD-106 C3 1812 3 -Vi R12 D1 UMD2 2 R6 1206 R9 0603 C4 1210 1206 R30 1206 8,9 D5 SOD-123 C35 U8 SOT-89 1 3 C20 C21 D4 D4 1210 1210 2 0805 C31 0805 D9DPAK DZ2 R59 1206 SOD-106/0805/1206 C32 0805 -Vo

2N6805

Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

s-29130afja-tb

Abstract: 24C16a 24cxx AT93C56R S-93C46AFJ S-24C04B S-2900A S-29130ADPA S-93C46A S-93C46ADP
Contextual Info: Contents Features 1 Pin Assignment 1 Block Diagram 1 Instruction Set 2 Absolute Maximum Ratings 2 Recommended Operating Conditions 2 DC Electrical Characteristics 3 Rewriting Times 3 Pin Capacitance 3 AC Electrical Characteristics 4 Operation 5 Dimensions

FCX749

Abstract: 3emitter bst52 FCX688B FCX689B FCX690B FCX692B FCX694B FCX696B FCX789A
Contextual Info: SOT89 HIGH GAIN TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-Emitter v CE say Max h :E Type v CBO V v CEO V ^C(cont mA mW FCX696B 250 FCX694B 120 250 500 1500 120 500 1500 FCX692B FCX690B 70 70 2000 1500 400/- 45 45 2000 1500 400/- FCX689B 20 20 3000 1500

BCV48

Abstract: BCV28 BCV29 BCV49
Contextual Info: BCV28, BCV48 PNP Silicon Darlington Transistors 1
For general AF applications 2
High collector current 3
High current gain
Complementary types: BCV29, BCV49 NPN 2 VPS05162 Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E 4=C SOT89 BCV48

Contextual Info: BCV28, BCV48 PNP Silicon Darlington Transistors 1
For general AF applications 2
High collector current 3
High current gain
Complementary types: BCV29, BCV49 NPN 2 VPS05162 Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E 4=C SOT89 BCV48

bcv48

Abstract: BCV 48 E6327
Contextual Info: BCV28, BCV48 PNP Silicon Darlington Transistors 1
For general AF applications 2
High collector current 3
High current gain
Complementary types: BCV29, BCV49 NPN 2 VPS05162 Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E 4=C SOT89 BCV48

N1055

Contextual Info: D A ì A b H tt. i TRIAC A C 1 D J M 1 A POWER MINI MOLD TRIAC DESCRIPTION PACKAG E DIMENSIONS The AC01DJM is all diffused type TRIAC granted RMS On-state in m illim eters Current 1 Amps, with rated voltages up to 400 volts. This is designed specifically to be driven by low-level logic in any

2sd1006-hk

Abstract: 2SD1007 2SB806 2SD1006 sot89 transistor JB 9e sot-89 2SD1007-HP SK FN 521
Contextual Info: NEC '> > ; = ! > h =7 > i> 7 . 9 S ilic o n T ra n s is to r 2SD1006,1007 o ^ -fv 7 4 ' < / r ^ 7 \ v ° -7 ^ iz y 2 S B 8 0 6 t = ¡ > 7 ° ' 9 > 9 U 0 O 2SB805, 1.5 + 0.1 * Ê # Ît* Æ :fê T a = 25 °C) 2SD1006 2SD1007 # »§• -t til m i 3 v- 9 9 ■

2S321

Abstract: 2SB646 2N5111 2n3063 ZTX50 LOW-POWER SILICON PNP 475 50K ROHM 2N1654 2N5857
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number NB223XJ NB223YJ BC556P BC856BR BC856BR BC856BR BC856CR V BR CEO 10 15 20 - 25 2SB1234 2SB1235 2Nl196 2Nl197 BCY93 BCY94 ZTX504 BCY95 ZT189 BC311 ~~~~~~3 2SAll14 BCY22 BFX41 2N1922 2SAl158Y 2N1275 2N5111 BFR60 ~~J;~2B

Contextual Info: Advanced Power Electronics Corp. APE1117-HF-3 1A Low Dropout Positive Voltage Regulators Description Features Maximum dropout of 1.5V at full load current Fast transient response Output current limiting Built-in thermal shutdown Available packages: SOT223, TO252, SOT89

2SD1005

Abstract: b10 lek 2SB804 2SD100
Contextual Info: Silicon T ra n s is to r 2SD1005 f t W-MWÌ $ W i : mm 0 7 |-— t V o 2SB804 i 3 > 7° IJ y > ^ 'J Titm T" l ^ t . o ë ‘x > i f t i Î Œ, iHjhF'E ”(?~'f~0 PT = 2.0 W (0.7 mmX 16 cm2- t e 7 Ì VCEo > 80 V, hFE = 200 TYP. (Ic = 100 mA) »& -9 - ^ î _ x pBH Œ

marking 1117

Abstract: 1117 regulator APE1117 1117 1.8v 1117 voltage regulator transistor 117-33
Contextual Info: APE1117 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator Pb Free Plating Product „ Features „ General Description - 1.4V maximum dropout at full load current - Fast transient response - Output current limiting - Built-in thermal shutdown - Packages: SOT223, TO252, SOT89,

transistor 117-33

Abstract: APE1117-50 TO-252-3L ape1117
Contextual Info: APE1117 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator Pb Free Plating Product „ Features „ General Description - 1.4V maximum dropout at full load current - Fast transient response - Output current limiting - Built-in thermal shutdown - Packages: SOT223, TO252, SOT89,