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    Murata Manufacturing Co Ltd

    Murata Manufacturing Co Ltd LBEE19NJZC-343

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    EE-19 N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EE-SG3

    Abstract: omron e-50
    Contextual Info: Photomicrosensor EE-SG3/EE-SG3-B Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. • Dust-proof model with a 3.6 mm wide slot. • Solder terminal model (EE-SG3). • PCB terminal model (EE-SG3-B). 13 19±0.1


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    qml-38535

    Abstract: 54ACT163 CQCC1-N20 GDFP2-F16 GDIP1-T16 H30034 DIODE smd marking MO
    Contextual Info: REVISIONS DESCRIPTION LTR DATE YR-MO -DA A P PR O V E D 98-04-20 Monica L. Poelking Add Radiation Hardness Assurance limits. Editorial changes throughout - jak. REV SH EE T REV A A A A A A A SH EE T 15 16 17 18 19 20 21 REV STATUS O F SH EE TS PM IC N/A


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    MIL-STD-750-2031-1

    Abstract: EE-1001 EE-1006 EE-2002 OMRON EE-1001
    Contextual Info: EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment H Built-in amplifier with NPN output H Models available with 5- to 12-VDC and 5H H H H H to 15-VDC input CMOS- and TTL-compatible 19-mm sensing distance EE-SB5V-E


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    80-mA 12-VDC 15-VDC 19-mm EE-1001/1006) EE-2002 1-800-55-OMRON MIL-STD-750-2031-1 EE-1001 EE-1006 EE-2002 OMRON EE-1001 PDF

    OMRON EE-1001

    Abstract: EE-1001 EE-sb5v-e OMRON EE-1006 EE-1006 EE-2002 transistor A 1006
    Contextual Info: EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment H Built-in amplifier with NPN output H Models available with 5- to 12-VDC and 5H H H H H to 15-VDC input CMOS- and TTL-compatible 19-mm sensing distance EE-SB5V-E


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    80-mA 12-VDC 15-VDC 19-mm EE-1001/1006) EE-2002 1-800-55-OMRON OMRON EE-1001 EE-1001 EE-sb5v-e OMRON EE-1006 EE-1006 EE-2002 transistor A 1006 PDF

    IGBT S 1377

    Abstract: Upi 0108 PM50RSK060 600 watts inverter circuit diagram 300 volt 5 ampere transistor dc to three phase inverter ic wn 537 a
    Contextual Info: PM50RSK060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/600 Volts EE DD THICK TYPICAL 19 PLACES A B J U 123 4 D N N N 5678 9 11 13 15 17 19 10 12


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    PM50RSK060 Amperes/600 IGBT S 1377 Upi 0108 PM50RSK060 600 watts inverter circuit diagram 300 volt 5 ampere transistor dc to three phase inverter ic wn 537 a PDF

    114810

    Contextual Info: Bestueckungsplan - contact layout 19 1 m- bestueckt- assemUe 19 1 EE-Zo n e fuer durchkontaktierte Loecher 0 0.6 *o.os Compliant zone for thru hole 0 0 .6 *0 .0 5 shieldinp 3-0,4 TT ! T T i j i i t 11.4 Anforderungsstufe Datum Id -N r. 13.85 date abqefraest;


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    obg-4-101 114810 PDF

    qml-38535

    Contextual Info: in AM D REVISIONS DESCRIPTION DATE m-MO-QA APPROVED REV SH EE T SH EET R E V STATUS O F SH EETS 22 23 24 25 REV 10 SH EE T 16 12 19 17 20 21 PMIC N/A D EFEN SE ELECTR O NICS SU P P LY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE


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    MIL-BUL-103. 5962-9169501MLX 5962-9169501M3X PALCE610H-20/BLA PALCE610H-20/B3A qml-38535 PDF

    pbt-GF15

    Abstract: mqs 6 AMP PBT-GF15 114-18659
    Contextual Info: T HI S D R A W I N G IS UN PU BLI SHE D. VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG COPYRIGHT 19- 3 6 8 BY AMP R E L E A S E D FOR P U B L I C A T I O N FREI FUE R V E R O E F F E N T L I C H U N G INCORP ORA TED . ^ E eE eE htE t ,19-. MA T ED WITH: P A S S E N D ZU:


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    P8T-G515 P5T-GP15 PBT-G515 3F588 MA555TAB pbt-GF15 mqs 6 AMP PBT-GF15 114-18659 PDF

    223210

    Contextual Info: Date Code XXXXXXX 2 ERNI 223210 EE Zone für durchkontaktierte 2 18 x 2 = 13,45 -0,1 15,4 3 -0,1 Ident-Nr. Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 36 6x2= 1 19 z Ebene - Level 3 Ebene - Level 2 12 11.2 9.7 a 8.2 Ebene - Level 1 b 19


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    ERMAB19 223210 PDF

    Contextual Info: ERNI EE Zone für durchkontaktierte Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 853040 2 18 x 2 = 36 2 4x2= Level 3 Ebene - 1 19 13,45 -0,1 15,4 Date Code 3 -0,1 Firmensignet XXXXXXX Ident-Nr. Ebene - z a Level 2 Ebene - Level 1 b 19 c 11.2


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    D-73099 PDF

    SMA-JR

    Contextual Info: 13 12 10 M ATER IALS AND FINISHES SEE S H EE T 1 B B RGB RANGE SEE T A B L E RGB LAYO U T 5.5A. MIN • SEE S H EE T 1 ' .218 n _/Hd SCREW LENGTH SEE TA B LE REF ONLY 1.05 .O AT REF Wit V- REF 0-80 UNF-2A TH READ TORQUE TO .5-.8 INCH-POUND 73251-1856 4.8 / .19


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    EWR-1995 SD-73251-185 SMA-JR PDF

    Contextual Info: Date Code 13,45 -0,1 15,4 3 -0,1 Ident-Nr. XXXXXXX ERNI 134188 EE Zone für durchkontaktierte Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 2 18 x 2 = 36 2 6x2= 1 19 z a Ebene - Level 3 Ebene - Level 2 12 11.2 9.7 b 19 Ebene - Level 1 c 1


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    D-73099 PDF

    Contextual Info: 3 THIS DRAWING C IS U N P U B L I S H E D . COPYRIGHT RELEASED BY 19 AMP INCORPORATED. FOR ALL PUBLICATION RIGHTS ,19 R E V ISIONS RESERVED. DF DESCRIPTION REV PER OH 14- DATE DWN EE 3 - 18-05 - 0 5 APVD [5.08] 0 1 D [5 HOUSI NG M A T ' L : VECTRA COLOR : BLACK


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    Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED •PROPRIETARY' TO BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC, LEDE POLARITY PIN El PIN EE COLOR + YELLDW + GREEN — LEDI POLARITY PIN 19 PIN EO


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    2002/95/EC TRD1-10 125MHz 100DHMS 5MHz-40MHz 40MHz-100MHz 20LDG f/80MHz) 100kHz 100MHz PDF

    EE-SX1088

    Contextual Info: Photomicrosensor Transmissive EE-SX1088 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • 25±0.2 19±0.15 Two, R1 5±0.2 6±0.2 Four, C0.3 Two, 3.2±0.2 dia. holes ■ Absolute Maximum Ratings (Ta = 25°C)


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    EE-SX1088 EE-SX1088 PDF

    EE-SX1096

    Abstract: Omron ir 21015
    Contextual Info: Photomicrosensor Transmissive EE-SX1096 Be sure to read Precautions on page 25. • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • 25±0.2 19±0.15 Two, R1 5±0.2 6±0.2 Two, 3.2±0.2 dia. holes


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    EE-SX1096 EE-SX1096 Omron ir 21015 PDF

    sine wave generator using LM358

    Abstract: LM358 vs LM741 sine wave generator using opamp lm358 sine wave generator circuit lm358 gain formula lf356 op-amp opamp Lm358 pin function LM358 microphone electrical power generator using transistor transistor based class A amplifier lab
    Contextual Info: University of North Carolina, Charlotte Department of Electrical and Computer Engineering ECGR 3157 EE Design II Spring 2011 Lab 1 Power Amplifier Circuits Issued: January 19, 2011_Due: February 4, 2011 In this assignment, you will build some basic amplifier circuits. Many of these amplifiers will


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    LM741 sine wave generator using LM358 LM358 vs LM741 sine wave generator using opamp lm358 sine wave generator circuit lm358 gain formula lf356 op-amp opamp Lm358 pin function LM358 microphone electrical power generator using transistor transistor based class A amplifier lab PDF

    EE-SPY415

    Contextual Info:  EE-SPY415 Reflective Photomicrosensor with a detectable sensing distance of 3- to 19-mm white paper  Photo IC circuitry greatly improves response time  Pulse modulation effectively reduces external light interference  Convergent technology ensures enhanced sensing area


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    EE-SPY415 19-mm EE---SPY415 MAX12 1-800-55-OMRON 653-EE-SPY415 EE-SPY415 PDF

    Contextual Info: XXXXXXX 2 ERNI 174118 EE Zone für durchkontaktierte 2 18 x 2 = Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 36 6x2= 12 923533 1 19 Ebene - a b 11.2 Level 3 Ebene z 9.7 Level 2 19 8.2 Ebene - Level 1 c 1 d +0.2 +0.2 +0.2 4.5 ±0.3 e 3.7 ±0.3


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    ERMAB19 PDF

    MPC505

    Contextual Info: MPC505 Customer Information Sheet Preliminary Rev. B Silicon [revision 12-19-1997] Customer Information refers only to user documentation which may be incorrect Issue#982 Masking or Negating Interrupts If the EE bit in the MSR is asserted external interrupts enabled and either of the following


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    MPC505 PDF

    EESM3B

    Abstract: EE-SM3B P8-00
    Contextual Info: Photomicrosensor EE-SM3B Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. Two, 3.2 dia. holes • • • Two, C1.7 19±0.15 General-purpose model with a 3-mm-wide slot. PCB mounting type. With a red LED as an emitter element and a


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    114529

    Contextual Info: Bestückungsplan - contact layout 1 19 e d c b a - assemble = bestückt 1 19 2 e d c b EE-Zone für 8 a 4x2= durchkontaktierte ±0.05 Löcher ø 0.6 2 Compliant zone for 18 x 2 = thru hole 36 ø 0.6 3 -0,4 38 max. 2 1 max. 3 10,8 20,65 1,7 1 max. ±0.05 11,4


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    923132

    Contextual Info: 15.4 3 -0.1 Date Code 13.45 -0.1 Id.-Nr. ERNI XXXXXXX 923132 EE Zone fuer durchkontaktierte 5 0,5 Loecher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 Ausrichtstreifen Alignment strip 2 2 6 x 2= 12 18 x 2 = 36 1 19 z Ebene - Level 3 Ebene - Level 2


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    D-73099 923132 PDF

    R3BC

    Contextual Info: 15.4 3 -0.1 Date Code 13.45 -0.1 Id.-Nr. XXXXXXX ERNI 923346 EE Zone fuer durchkontaktierte 5 0,5 Loecher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 Ausrichtstreifen Alignment strip 2 5x2= 2 18 x 2 = 10 36 1 19 z a Ebene - Level 3 Ebene - Level 2


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    D-73099 ERMB19 R3BC PDF