EEL 19 2005 Search Results

EEL-19

Abstract: eel19 V1630FS eel 19 Eel19 core PSF13020-48-TR V1630 Eel19 bobbin eel 19 core EEL19 5 5
Contextual Info: 3.MATERIAL LIST. NO/ITEM 3-1.CORE MATERIAL EEL-19 FERRITE CORE. 3F3 3-2.BOBBIN EEL-19 H. TYPE W / 10 PINS CHANG CHUN PLASTICS CO.,LTD. PHENOLIC/T375J. ULNO.E59481 S . HY-1931 HSIN YUNG PLASTIC INDUSTRIAL CO, LTD. 3-3. WIRE 2UEW/130°C. PACIFIC ELECTRIC WIRE & CABLE CO.

Contextual Info: data sheet a v a n te k MSA-0311 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek SOT-143 Package Features Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 2.3 GHz 11.0 dB typical Gain at 1.0 GHz

SGA-9289

Abstract: j392 J231 transistor SGA-9289Z
Contextual Info: Preliminary Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=28 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor

J231 transistor

Abstract: j392 diode germanium tu 38 f SGA-9289 130C SiGe POWER TRANSISTOR transistor RF S-parameters transistor J9 SGA9289Z
Contextual Info: Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe

20CTQ

Abstract: 20CTQ035 20CTQ040 20CTQ045 20CTQ045-1 IRFP460 SMD-220
Contextual Info: Bulletin PD-20056 rev. A 12/01 20CTQ. 20CTQ.S 20CTQ. -1 SCHOTTKY RECTIFIER 20 Amp IF AV = 20Amp VR = 35 to 45V Description/Features Major Ratings and Characteristics The 20CTQ center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The

transistor P1z

Abstract: SGA9189Z 130C SGA-9189 transistor 45 f 122
Contextual Info: SGA-9189 SGA-9189Z Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process. The SGA-9189 is

SGA9189Z

Contextual Info: Preliminary SGA-9189 SGA-9189Z Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=26 dBm. This RF device is based on a Silicon Germanium

MMIC "SOT 89" marking

Abstract: SBW-5089Z MMIC "SOT 89" marking 12 mmic amplifier sot-89 ECB-100607 ML200C SBW-5089 SBW5089Z Sirenza amplifier SOT-89 Marking MMIC marking R* SOT89
Contextual Info: Product Description The SBW-5089 Z is a high performance InGaP/GaAs HBT MMIC Amplifier. A Darlington circuit fabricated with InGaP process technology provides broadband RF performance up to 8 GHz and excellent thermal performance. The heterojunction increases

Contextual Info: data sheet «W 8 1992 0A V A N T E K MSA-0886 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 86 Plastic Package Features • • • • • .020 Usable Gain to 5.5 GHz High Gain: 32.5 dB typical at 0.1 GHz

Contextual Info: THIRD ANGLE PROJECTION I ALTERATION I SS U E ITEM CODE ECQE121020FB 1 / 121220FB 1 / 121520FB 1 / 121820FB 122220 FB 1 / / 1 122720FB / 1 123320FB 1 / 123920FB 1 / 124720FB 1 I 125620FB 1 / 126820FB / 1 128220FB / 1 121030FB / 1 121230FB / 1 121530FB / 1 121830FB

CL10B103KBNC

Abstract: CL10B103K LL1608-FS27NJ ML200C SGL-0163 SGL-0163Z TOKO 470 CLASS D ECB-101761 CL10B103KB device marking sgl
Contextual Info: Product Description The SGL-0163 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5 V. The SGL-0163 has

Contextual Info: ^A V A N T E K M SA-0986 MODAM P C ascadable Silicon Bipolar M onolithic M icrow ave Integrated C ircuit A m plifiers August, 1989 Avantek 86 Plastic Package Features • • • • • • .020 Broadband, Minimum Ripple Cascadable 50 Q Gain Block 7.2 ± 0.5 dB typical Gain Flatness from

Contextual Info: \ 20 / M M O O K K NOTES: 1 M ATERIALS: TH ERM O PLASTIC PO LY E S T E R ,G LA S S FILLE D , U L9 4V-0.CO LO U R : P E B B L E GREY RAL 7032 TERM INAL - BRASS MOUNTING C L IP : S T EEL 2) FINISH: TERM IN AL:CONTACT AREA 1. PERFORMANCE L E V E L I: S E L E C T IV E GOLD Au), THICKNESS = 1.27 MICROMETER

Contextual Info: SEE NOTE 1.1 B C d Te 1x2 SEE NOTE 1.1 SEE DETAIL C SEE NOTE 5 PIN 2 /-DETAIL A -— 5CKREF. — PIN 18 - V DETAIL B - 9.2 ± 0.2 - 27.3 ± 0.5 33.8 ± 0.5 — -LENGTH HDMI M) I— HDMI(M) 1M 1Jj i J m i i DETAIL B DETAIL A SEE NOTE 1.2 SEE NOTE 1.2

eel 16 2005

Abstract: AWT6252 AWT6252M7P8
Contextual Info: AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • High Efficiency: 41% - Low Bias Mode 39% - High Bias Mode • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA

LCDA12C-1

Abstract: LCDA15C-1 diode marking code 12L
Contextual Info: LCDA12C-1 and LCDA15C-1 Low Capacitance TVS Diode Array PRELIMINARY PROTECTION PRODUCTS Description Features The LCDAxxC-1 is a low capacitance transient voltage suppressor TVS diode array. It is designed to protect sensitive CMOS ICs from the damaging effects of ESD

LCDA12C-8

Abstract: LCDA15C-8.TBT RS-449 LCDA15C-8
Contextual Info: LCDA12C-8 and LCDA15C-8 Low Capacitance TVS Diode Array For Multi-mode Transceiver Protection PROTECTION PRODUCTS Description Features The LCDAxxC-8 has been specifically designed to protect sensitive components which are connected to data and transmission lines from over voltages caused

lcda15c-8.tb

Contextual Info: LCDA12C-8 and LCDA15C-8 Low Capacitance TVS Diode Array For Multi-mode Transceiver Protection PROTECTION PRODUCTS Description Features The LCDAxxC-8 has been specifically designed to protect sensitive components which are connected to data and transmission lines from over voltages caused

eel 19 2005

Contextual Info: SK2111 1:10 Differential LVDS Clock Driver TEST AND MEASUREMENT PRODUCTS Description Features SK2111 is a 1 to 10 data/clock distributor utilizing LVDS Low Voltage Differential Signaling technology for high speed operation. Data paths are fully differential from input-to-output for low noise generation

9250BF

Abstract: 9250bf-27 CELERON D 326
Contextual Info: DATASHEET Frequency Generator and Integrated Buffers for Celeron & PII/IIITM Pin Configuration *FS2//REF0 VDD X1 X2 GND GND 3V66-0 3V66-1 3V66-2 VDD VDD PCICLK_F PCICLK0 GND PCICLK1 PCICLK2 GND PCICLK3 PCICLK4 PCICLK5 VDD VDD GND GND 48MHz_0 48MHz_1 VDD FS0

SMDA15.TBT

Abstract: SMDA05.TBT
Contextual Info: SMDA05 through SMDA24 Unidirectional TVS Array for Protection of Four Lines PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMDAxx series of TVS arrays are designed to provide undirectional protection for sensitive electronics from

SMDA15C.TBT

Abstract: SMDA05C.TBT
Contextual Info: SMDA05C THRU SMDA24C Bidirectional TVS Array for Protection of Four Lines PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMDAxxC series of TVS arrays are designed to provide bidirectional protection for sensitive electronics

Contextual Info: i H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E I CAPAC1 TANCE ITEM CODE F / 4 ¥]ECHU H I f I f H H I f I f H I f I f M I f ~ H H " I f I f H I f 1 1 / 1 1 1 I f H I f I f I f H I f I f I f 1C2720XO 1C3320XO 1C3920XO 1C4720XO 1C5620XO 1C6820XO

Contextual Info: SMDA05 through SMDA24 Unidirectional TVS Array for Protection of Four Lines PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMDAxx series of TVS arrays are designed to provide undirectional protection for sensitive electronics from