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    EEPROM 2864 CMOS Search Results

    EEPROM 2864 CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    X28C512DM-15/B Rochester Electronics LLC X28C512 - EEPROM, 64KX8, Parallel, CMOS Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    FM93CS46M8 Rochester Electronics LLC EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8 Visit Rochester Electronics LLC Buy
    NM93C56EN Rochester Electronics LLC EEPROM, 128X16, Serial, CMOS, PDIP8, PLASTIC, DIP-8 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy

    EEPROM 2864 CMOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EEPROM 2864

    Abstract: PE3341 PE3342 PE9721 PE9722
    Text: NEWS RELEASE EDITORIAL CONTACT: Rodd Novak, Director of Marketing 858 731-2864 Reader/Literature Inquiries: Richardson Electronics 1-800-737-6937 Cindy Trotto, PR/MarCom (602) 750-7203 FOR IMMEDIATE RELEASE Peregrine Semiconductor PE334x Integer-N PLLs embed EEPROM


    Original     		PDF PE334x PE3341 PE3342 EEPROM 2864 PE9721 PE9722

    2864 eeprom

    Abstract: DS1225Y-150 DS1225Y DS1225Y-200 EEPROM 2864 CMOS DS1225Y-150IND DS1225Y-170 DS1225Y-200IND EEPROM 2864 2764 eprom PINOUT
    Text: DS1225Y 64k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1225Y 28-pin 24-Pin 720URE DS1225Y-150 DS1225Y-150+ DS1225Y-150IND DS1225Y-150IND+ DS1225Y-170 DS1225Y-170+ 2864 eeprom DS1225Y-150 DS1225Y DS1225Y-200 EEPROM 2864 CMOS DS1225Y-150IND DS1225Y-170 DS1225Y-200IND EEPROM 2864 2764 eprom PINOUT

    2864 AP

    Abstract: DS1225 DS1225AB DS1225AD ICC01 DS1225AB-200
    Text: DS1225AB/AD DS1225AB/AD 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE • Directly A7 3 26 NC A6 4 25 A8 • Unlimited write cycles A5 5 24 A9 • Low–power CMOS A4 6 23 A11 A3


    Original     		PDF DS1225AB/AD DS1225AD) DS1225AB) DS1225AB/AD 2864 AP DS1225 DS1225AB DS1225AD ICC01 DS1225AB-200

    DS1225

    Abstract: DS1225AB DS1225AD ICC01 EEPROM 2864 CMOS
    Text: DS1225AB/AD DS1225AB/AD 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE • Directly A7 3 26 NC A6 4 25 A8 • Unlimited write cycles A5 5 24 A9 • Low–power CMOS A4 6 23 A11 A3


    Original     		PDF DS1225AB/AD DS1225AD) DS1225AB) DS1225AB/AD DS1225 DS1225AB DS1225AD ICC01 EEPROM 2864 CMOS

    Untitled

    Abstract: No abstract text available
    Text: DS1225AB/AD DS1225AB/AD 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE • Directly A7 3 26 NC A6 4 25 A8 • Unlimited write cycles A5 5 24 A9 • Low-power CMOS A4 6 23 A11 A3 7


    Original     		PDF DS1225AB/AD DS1225AD) DS1225AB) DS1225AB/AD 28-PIN 28-PIN

    DS1225Y

    Abstract: eeprom 2764 DS1225Y-150 DS1225Y-170 DS1225Y-200 EEPROM 2864
    Text: Not Recommended for New Design DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 100pF DS1225Y 28-PIN, 720-MIL 28-PIN eeprom 2764 DS1225Y-150 DS1225Y-170 DS1225Y-200 EEPROM 2864

    2864 eeprom

    Abstract: 2764 eprom DS1225Y Ram 2864 DS1225Y-150 DS1225Y-170 DS1225Y-200 2764 eprom PINOUT 2864 ram
    Text: Not Recommended for New Design DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 100pF DS1225Y 28-PIN, 720-MIL 28-PIN 2864 eeprom 2764 eprom Ram 2864 DS1225Y-150 DS1225Y-170 DS1225Y-200 2764 eprom PINOUT 2864 ram

    DS1225Y

    Abstract: No abstract text available
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 24-Pin 720-mil A0-A12 150ns 170ns

    DS1225Y-200

    Abstract: DS1225Y-200IND DS1225Y DS1225Y-150IND DS1225Y-150 DS1225Y-170 ds1225
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 150ns 170ns 200ns DS1225Y-200 DS1225Y-200IND DS1225Y DS1225Y-150IND DS1225Y-150 DS1225Y-170 ds1225

    DS1225Y

    Abstract: DS1225Y-150 DS1225Y-200 DS1225Y-150IND DS1225Y-170 DS1225Y-200IND CI EEPROM 2864 EEPROM 2864
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 150ns 170ns 200ns DS1225Y DS1225Y-150 DS1225Y-200 DS1225Y-150IND DS1225Y-170 DS1225Y-200IND CI EEPROM 2864 EEPROM 2864

    2764 eprom PINOUT

    Abstract: dallas ds1225y DS1225Y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200
    Text: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full +10% operating range A0 10 19


    Original     		PDF DS1225Y DS1225Y 28-PIN 28-PIN 2764 eprom PINOUT dallas ds1225y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200

    EEPROM 2864

    Abstract: DS1225Y 8k eprom 2764 DS1225Y-150 DS1225Y150IND mdt28 EEPROM 2864 CMOS 2864 eeprom
    Text: 19-5603; Rev 10/10 NOT RECOMMENDED FOR NEW DESIGNS DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power


    Original     		PDF DS1225Y 28-pin MDT28 EEPROM 2864 DS1225Y 8k eprom 2764 DS1225Y-150 DS1225Y150IND EEPROM 2864 CMOS 2864 eeprom

    DS1225AD-70

    Abstract: DS1225AD-85 ICC01 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-200
    Text: DS1225AB/AD 64k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM or EEPROM


    Original     		PDF DS1225AB/AD 28-pin DS1225AD) DS1225AB) 150ns 200ns DS1225AD-70 DS1225AD-85 ICC01 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-200

    EEPROM 2864

    Abstract: 2864 eeprom 2764 eprom PINOUT Ram 2864 EPROM 2764 pRoM 2764 2764 EEPROM DS1225Y EEPROM 2864 CMOS DS1225
    Text: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full ±10% operating range A0 10 19


    Original     		PDF DS1225Y DS1225Y EEPROM 2864 2864 eeprom 2764 eprom PINOUT Ram 2864 EPROM 2764 pRoM 2764 2764 EEPROM EEPROM 2864 CMOS DS1225

    2864 eeprom

    Abstract: EEPROM 2864 Ram 2864 2764 EPROM 2864 EPROM 2764 EEPROM 2864 RAM nv sram 8 pin 2764 eprom PINOUT EEPROM 2864 CMOS
    Text: DS1225Y DALLAS DS1225Y SEMICONDUCTOR 6 4 K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 - 1 A12 1 • Data is automatically protected during power loss A7 • Directly replaces 8K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF DS1225Y 28-pin DS1225Y 2864 eeprom EEPROM 2864 Ram 2864 2764 EPROM 2864 EPROM 2764 EEPROM 2864 RAM nv sram 8 pin 2764 eprom PINOUT EEPROM 2864 CMOS

    2864 eeprom

    Abstract: 2764 EEPROM EEPROM 2864 CMOS 2764 eprom PINOUT A2A1G
    Text: D S 1225AB/AD DALLAS SEMICONDUCTOR FEATURES DS1225AB/AD 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power NC 1 Al2 • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or


    OCR Scan     		PDF 1225AB/AD DS1225AB/AD DS1225AD) 2864 eeprom 2764 EEPROM EEPROM 2864 CMOS 2764 eprom PINOUT A2A1G

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 • Data is automatically protected during power loss • Low-power CMOS VCC A12 | 2 27 1 WE A7 1 3 26 1 NC A6 1 4 25 1 A8 A5 1 5 « A9


    OCR Scan     		PDF DS1225Y 28-pin Vcc11. DS1225Y 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS12250/E DALLAS DS1225D/E 64K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 8K EEPROM x 8 volatile static RAM or • Low-power CMOS


    OCR Scan     		PDF DS12250/E DS1225D/E 28-pin S1225D 28-PIN 010TNA

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 1 A12 | A7 | 28 1 VCC 2 27 1 WE 3 26 1 NC A6 | 4 25 1 A6 A5 | 5 24 1 A9 A4 1 6 23 1 A11 • Low-power CMOS A3 1


    OCR Scan     		PDF 28-pin DS1225Y psi225ln DS1225Y

    DS1225Y

    Abstract: DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY
    Text: 6 0 DS1225Y DALLAS SEMICONDUCTOR 64K Nonvolatile SRAM PIN ASSIGNMENT • Directly replaces 8K x 8 volatile static RAM or EEPROM . NC 1 1 28 1 VCC À12 | 2 27 1 WE A7 0 • Data is automatically protected during power loss CO • Data retention in the absence of Vcc


    OCR Scan     		PDF DS1225Y 28-pin 228-PIN 28-PIN DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 1 • Data is automatically protected during power loss 28 g VCC A12 I 2 27 § WE • Directly replaces 8K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF DS1225Y 150ns, 170ns, 200ns 28-pin 0S1225Y DS1225Y 28-PIN

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR FEATURES DS1225Y 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM • Unlimited write cycles


    OCR Scan     		PDF 28-pin DS1225Y A0-A12 DS1225 DS1225Y

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC I NC * 25 1 AS 24 1 A9 • Over 10 years of data retention • Standard 28-pin JEDEC pinout • Available in 150ns, 170ns, or 200ns read access


    OCR Scan     		PDF 28-pin 150ns, 170ns, 200ns DS1225Y DS1225Y

    Ram 2864

    Abstract: 2764 EEPROM 2864 EEPROM DS12250
    Text: DALLAS SEMICONDUCTOR CORP BTE D B 5 b I M I 30 O Q G B B T l 1 • DAL DS1225D/E T '< i ,- 2 V V 7 D A L L A DS1225D/E 64K Nonvolatile SRAM S SEMICONDUCTOR FEATURES PIN DESCRIPTION • Data retention in the absence of V co 2 8 1 VCC 2 7 1 WE\ NC • Data is automatically write protected during


    OCR Scan     		PDF DS1225D/E 28-pin DS1225D DS1225E 536-bit, DS1225D/E Ram 2864 2764 EEPROM 2864 EEPROM DS12250