EH800 Search Results

EH10002ZI

Abstract: EH10004ZI EH10006ZI EH10008ZI EH80 EH8002ZI EH8004ZI EH8006ZI EH8008ZI EH8010ZI
Contextual Info: 3 Dhase Bridge Modules H80, EH100 — Dim. Inches Minimum M illim eter Maximum Minimum A I- l - L - l — H Microsem i Catalog Num ber EH8002ZI* EH8004ZI* EH8006ZI* EH8008ZI* EH8010ZI* EH8012ZI* 1.10 2.40 .950 1.760 1.887 .505 .335 .225 1.300 EH10002ZI+ EH10004ZI*

15006

Abstract: STD 243 S N53100Z1EB1 53100z f6z1 EH8006Z1
Contextual Info: Three Phase Bridges Pa rt N u m b er G 5360Z 1EB 1 G 50480Z1EB 1 G 5380Z 1EB 1 G 504100Z1EB 1 G 53100Z 1EB 1 G 504120Z1EB 1 G 53120Z 1EB 1 E HF2Z1 E H S2Z1 EH10002Z1 EH8002Z1 EH 15002Q EH 15002Y N 50420Z1EB1 N 5320Z1EB1 N50440Z1EB1 N 5340Z1EB1 N 50460Z1EB1

EH10002ZI

Abstract: EH10004ZI EH10006ZI EH10008ZI EH80 EH8002ZI EH8004ZI EH8006ZI EH8008ZI
Contextual Info: 3 Phase Bridge Modules EH80, EH10Q Dim. Inches I A I ~]_n ^ r Millimeter Minimum Maximum Minimum Maximum Notes ^ A B C D E F G H J K L M C - B - - I- l~— L — -| — H Microsemi Catalog Number EH8002ZI* EH10002ZI* EH8004ZI* EH10004ZI*

BH203

Contextual Info: SILICON PIN DIODES High voltage PIN diodes Two & three port RF PIN switch modules Description This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.

EH800X

Contextual Info: Surge Arrester 2-Electrode-Arrester EH800X Ordering code: T. B. D. Preliminary data DC spark-over voltage 1 2) 800 ± 20 V % < 1300 < 1100 V V < 1550 < 1350 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs)

abb contactor b9 30 10

Abstract: IEC 158-1 VDE 0660 ABB EH550 contactors B75 contactor ABB ABB contactor B50 ABB EH300 Contactors abb EH700 B40 contactor ABB abb b12 contactor ABB EH175 Contactors
Contextual Info: Across the line contactors Type A, B & EH 1 B9 – B75, A95 – A110 • • • • • • • • • • • • • • • • • • • • AC 1000 – 2/97 • CONTACTORS: Selection: 1.4 - 1.7 EH145 – EH800 Maximum UL/CSA horsepower ratings • Maximum UL/CSA horsepower ratings

BH204N

Abstract: BH403a
Contextual Info: SILICON PIN DIODES High voltage PIN diodes TWO & THREE PORT RF PIN SWITCH MODULES Description This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.

Contextual Info: SILICON PIN DIODES High voltage PIN diodes TWO & THREE PORT RF PIN SWITCH MODULES Description This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.

Contextual Info: Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes - A B C D E F G H J K L M Mlcrosemi Catolog Number EH8002ZI* EH10002ZI* EH8004ZI* EH10004ZI* EH10006ZI* EH8006ZI* EH8008ZI* EH10008ZI* EH8010ZI+ EHI 001 OZI* EH8012ZI* EH10012ZI* 2.25 .930 1.740

EH80083

Abstract: EH80204 DH80154
Contextual Info: SILICON PIN DIODES High voltage PIN diodes SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS MEDIUM & HIGH POWER Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction

DH80154

Abstract: DH80080
Contextual Info: SILICON PIN DIODES High voltage PIN diodes SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS MEDIUM & HIGH POWER Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction

DH80050

Abstract: DH80055-20 DH80050-40N DH80050-01 DH80055-20N DH80050-06N DH80080 DH80055 dh80082-06 DH80082-06N
Contextual Info: Silicon Pin Diodes Switching Pin Diodes SWITCHING PIN DIODES Breakdown Voltage Vbr @ Ir = 10 A V Serie Resistance Rs @ F= 120 MHz Ω Capacitance @ F= 1 MHz Application pF Min. Typ. Max. @ Vr = 50V Package 1 Part Number Max. @ IF=200mA Min (µs) 500 High Power Switching

Contextual Info: SIEMENS Silicon Schottky Diode BAS 70W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detection and mixing Type BAS 70-04W BAS 70-05W BAS 70-06W Ordering Code tape and reel 1 Q62702-A1068 Q62702-A1069

DH80154

Abstract: DH80080 DH80106 DH80051 DH80055 dh80102 BH200 DH80100 DH80120 SH93103
Contextual Info: SILICON PIN DIODES High voltage PIN diodes MICROWAVE HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.

scr 8a 200v

Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Contextual Info: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified

diode RA 225 R

Abstract: c141c tic 208
Contextual Info: 3 Phase Bridge Modules EH80, EH10Q Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes - A B C D E F G H J 2.25 .930 1.740 1.883 .495 .325 .215 1.270 - 57.15 23.62 44.19 47.82 12.57 8.25 5.46 32.25 .198 .208 5.02 26.79 1.055 1.075 # 1 0 -3 2 Tapped Holes

abb contactor b9 30 10

Abstract: EH550 T25DU B75 contactor ABB ABB EH550 contactors abb b12 contactor ABB EH300 Contactors B40 contactor ABB ABB EH550 ABB EH175 Contactors
Contextual Info: Across the line starters Open & enclosed Description B9 – B75 • Maximum UL/CSA horsepower ratings • Compact space savings design • Standard auxiliary contact configurations: B9 - B25 1 N.O. or 1 N.C. B30 2 N.O. & 2 N.C. B40 - B75 1 N.O. & 1 N.C. • Additional auxiliary contact blocks are

sqm1150

Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294
Contextual Info: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.

3225 diode

Abstract: bose EH10002ZI EH10004ZI EH10008ZI EH80 EH8002ZI EH8004ZI EH8006ZI EH8008ZI
Contextual Info: 3 Phase Bridge Modules EH80, EH10Q Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes - A B C D E F G H J 2.25 .930 1.740 1.883 .495 .325 .215 1.270 - 57.15 23.62 44.19 47.82 12.57 8.25 5.46 32.25 .198 .208 5.02 26.79 1.055 1.075 # 1 0 -3 2 Tapped Holes

FK1600

Abstract: ral 7035 paint GE circuit breaker 1 pole C2 DH160 mccb circuit breaker D250L MCCB 160A mccb square d EN250 3 phase BUSBAR for crane
Contextual Info: GE imagination at work GE Power Controls steel New Sheet distribution system GE Power Controls in Europe GE Power Controls is the European arm of GE Industrial Systems, one of the ten core businesses of the General Electric Company USA , known internationally for its positive approach to its customers, its people and

diode GG 79

Abstract: BAW 79 W 79AB
Contextual Info: SIEMENS Silicon Switching Diodes • For high-speed switching • High breakdown voltage • Com mon cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D BAW 79 A . BAW 79 D Marking Ordering Code tape and reel GE GF GG GH Q62702-A781 Q 62702-A782 Q62702-A771

SCR 30A 100V

Abstract: do213ab 1A 200V SCR die Fast Recovery Bridge Rectifier, 60A, 600V Ultrafast Recovery Rectifier Bridge ultraFast Recovery Bridge Rectifier rectifier bridge 300v 30a Fast Recovery Bridge Rectifier, 35A, 600V Bridge Rectifier, 35A, 600V single phase half bridge controlled rectifier scr
Contextual Info: Microsemi Corporation Colorado Product Selection Guide Spring 2004 Product Selection Guide Index Page Military Qualified Parts 1 Axial Lead Rectifiers 2 Surface Mount Rectifiers 3-5 TO220 and TO247 Rectifiers 6 Power Surface Mounts 7 Discrete Modules 8 Power Modules

Contextual Info: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.

DH80210

Abstract: DH80154 BH200 DH80189 DH80120 EH80204 EH80083 EH80182 BH301 DH80209
Contextual Info: SILICON PIN DIODES High voltage PIN diodes Silicon PIN diodes for switching & phase shifting applications medium & high power Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction