EIAJ-RRM 08 Search Results

ESAC63-004

Abstract: A478
Contextual Info: ESAC63-004 2 oa : O utline Drawings >a - y h * - '< V 7 m — F SCHOTTKY BARRIER DIODE 03.6 *o ? 4.5 ’Ü I .32 5 08 : Features •1 & V F Low Vp JEDEC T0-220AB EIAJ SC-46 • T.'tvT's'fae-K^nti-asi' Super high speed switching. m m & m Connection Diagram

Contextual Info: ESAC63-004 2 oa : O utline D raw ings >a - y h * - ' < V 7 m — F SCHOTTKY BARRIER DIODE 03.6 *o ? 4.5 ’Ü I .32 5 08 : Features JEDEC T0-220AB Low Vp EIAJ SC-46 T.'tvT's'f a e - K ^ n t i - a s i ' Super high speed switching. m m &m •1 & V F • Connection Diagram

10JL2C48A

Abstract: U10JL2C48A
Contextual Info: TOSHIBA 10 JL2 C48A#U 10 JL2 C48A T O S H IB A H IG H EFFICIENCY D IO D E S T A C K H E D SILIC O N E P IT A X IA L TYPE 10JL2C48A, U10JL2C48A S W IT C H IN G TYPE P O W E R SUPPLY A P P L IC A T IO N C O N V E R TE R & CHOPPER A P P L IC A T IO N • •

100GXHH22

Contextual Info: TOSHIBA 100GXHH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time v RRM = 4500V ÏF AV = 100 a tj»j»—5*5jus

1000GXHH23

Contextual Info: TOSHIBA 1000GXHH23 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1000GXHH23 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. 2 -0 3 .5 ±0.2 • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling •V rrm = 4500V : I f A V - 1000a

Contextual Info: TOSHIBA 1000GXHH22 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1000GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling 2 - 03.5 ± 0.2 : V rrm = 4500V : ! f AV = 1000A

1000GXHH22

Contextual Info: TOSHIBA 1000GXHH22 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1000GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 2 - 0 3 .5 ± O .2 • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling •V rrm : I f A V

Contextual Info: 100GXHH22 TOSHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time VRRM = 4500V :F AV = 1°0 a M A X IM U M RATINGS CHARACTERISTIC

Contextual Info: TO SHIBA 50FXFG13,50FXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 50FXFG13, 50FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage V rrm = 3300V Average Forward Current :F AV = 50A Reverse Recovery Time (Tj = 25°C) trr = 2.0/¿s

Contextual Info: TOSHIBA 10J L2 C48A, U10J L2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage Average Output Rectified Current

ntj100

Abstract: ESAC39M 56cf
Contextual Info: ESAC39M C,N,D (5A) : Outline Drawings 10_5max. FAST RECOVERY DIODE 4.5IV jf Features JEDEC SC-67 EIAJ Insulated package by fully m olding. m w m & m Super high speed switching. Connection Diagram Low VF in turn on • f tftlX tt High reliability 9 -I ^ — o '7,

ESAC93-02

Abstract: SC-65 T151 T460 T810 T930 A276
Contextual Info: ESAC93-02 12A I f e S i i f c i t S K • W K ' + i i : O u t lin e D r a w in g s LOW LOSS SUPER HIGH »PEED RECTIFIER ■ 4 # « : Features • te V F JEDEC EIAJ Low VF SC-65 • X-f S uper high speed sw itch in g . Connection Diagram • 7 V - * - & « c j& A flm tt

ESAB82M-004

Contextual Info: E S A B 8 2 M - 4 5 a è ± / J ' i * ^ ì - k ‘ Outline Drawings SCHOTTKY BARRIER DIODE 0.4-1 1-2.7 I t t A : Features JEDEC Insulated package by fully m olding. SC-67 EIAJ >1&VF Low V F * Connection Diagram XfcT-K Super high speed switching. High reliability by planer design.

BAV23S l31

Abstract: diode 1407
Contextual Info: DISCRETE SEMICONDUCTORS BAV23S General purpose double diode Product specification Supersedes data of 1998 Jan 08 Philips Semiconductors 1999 May 05 PHILIPS PHILIPS Philips Semiconductors Product specification General purpose double diode BAV23S FEATURES DESCRIPTION

f930

Abstract: A309
Contextual Info: ES AD92 M 03 2o a - * O u tlin e D r a w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER : F e a tu re s JED E C Insulated package by fully molding. EIAJ • te V F Low V k • M"j*'sV tt-Y lflb lb 1-&L' C o n n e c t io n D ia g r a m Super high speed switching.

FT 3528

Abstract: rx-930
Contextual Info: ERC62M-004 1OA S 'a 'y b f — ' O jT ÿ 'f : Outline D rawings K S C H O T T K Y BARRIER DIODE 10.5MAX' 4.5 MAX. .2.0 35.2-8:* fe.O_ <D 0Æ 0.4, 2.7 5.0$ : Features JEDEC Insulated package by fully m olding. EIAJ SC-67 • te V F Low V F m « M K Connection Diagram

Contextual Info: KP923C2 5A f t S lif c iB Ä S f c y - f s t — K : Outline Drawings 2.3± 0,2 0.5 LOW LOSS SUPER HIGH SPEED RECTIFIER 0.5±0.1 : Features JEDEC • te V F Low VF EIAJ Super high speed sw itchin g. mm&wt Connection Diagram • T V —t High reliability by planer design

a548

Abstract: ESC011M-15 T151 T460 T760 T930
Contextual Info: E S C 1 1 M - 1 5 5 A IW K ’+ jS I Outline Drawings 5 .5 * ° 3 FAST RECOVERY DIODE 5 .5 * ° 3 <t>3.2 3.5 • f t « : Features • KiftttTv, Dam per diode fo r high d e finition TV and 0.6 high resolution display. •9 —YO>&kit Dam per and m odulater diode are jointed

TECO

Abstract: ESAC93M-02 T151 T810 t15i
Contextual Info: ESAC93M-02H2A If l - •'!'/£: Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER : Features O-frll 1.3-5 JEDEC Insulated pa ckag e by fully m o l d in g . EIAJ • IR V k Lo w V|. m a tt Connection Diagram S u p e r hig h speed s w itc h in g , mnzja&m ma

ET-7200B

Contextual Info: Chip Attenuators  type RCN02 Features 1) Compare with single type 2) Guarantee the attenuation (0.3db, 0.5db) 3) Mounting area 50% less 4) Big reduction for mounting cost (3 times  Once) ISO9001- / ISO/TS 16949-approved Rating Item Rated power

9arw

Abstract: 40T125 T151 T760 T930 YG801C09 YG801
Contextual Info: Y G 8 0 1 C 0 9 5A ’ Outline Drawings SCHOTTKY BARRIER DIODE 4 .7 m a x. I0.5max. 2.7 *- ,2 E 0.6 0.7 • W f t : Features 2.54 2.54 2.7 JEDEC Insulated package by fully molding. EIAJ SC-67 • teV F Low Vf Connection Diagram Super high speed switching.

Contextual Info: E R C80 M- 0 0 4 5A ì± ^ « * ^ ì-k ' > 3 ' y b j r —' V J T f * - i K : O u tlin e D ra w in g s 4-5 MAX. SCHOTTKY BARRIER DIODE 2.0 : Features JEDEC EIAJ Insulated pa c ka g e by fully m o ld in g . SC-67 • fcV r L ow Vp C o n n e c tio n D ia g ra m

k531

Abstract: ERC88M-009 A374
Contextual Info: ERC88M-009I5A > 3 : Outline Drawings 'yhf— ' O J T f ' f t - F SCH O TTKY B A R R IE R DIODE : Features JEDEC EIAJ Insulated package by fully molding. SC-67 • <&VF Low V F Connection Diagram Super high speed switching. • y i s - i —ttmC'kz&im m High reliability by planer design.

sc802

Contextual Info: I' SC802-06 i < ' 7 Ÿ 4 *-\r • W i» : Outline Drawings S C H O T T K Y B A R R IE R D IO D E * iS a Ü 135la* Z HW. => (as J~Ï35* 135’ m J 12" 5.1-OJ : Features JEDEC Surface mount device EIAJ • <ftVF Low V F : Marking Super high speed switching.