EK 1E1 Search Results

E78996 scr

Abstract: p402w
Contextual Info: • International Ek>r]Rectifier 4Ô5S4SE GDlbS3T 'ÎÔT ■ INR INTERNATIONAL RECTIFIER bSE » SERIES P400 PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features ■ Glass passivated junctions for greater reliability ■ Electrically isolated base plate ■ Available up to 1200 V RRM, V DRM

thyristor dk

Contextual Info: Bulletin 125185/B International S R ectifier ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features • All diffused design ■ C en ter am plifying gate ■ G u a ra n te e d high dv/dt ■ G u a ra n te e d high di/dt ■ High surge cu rren t capability

TSM 30 CK 1200

Contextual Info: Bulletin 125172/A International B Rectifier ST303C.C s e r ie s INVERTER GRADE THYRISTORS Puk Version Features • M etal case w ith ceram ic insulator ■ International standard case T 0 -2 0 0 A B E-PUK 620A ■ All diffused design ■ Center am plifying gate

thyristor dk

Contextual Info: Bulletin 125172/A International SRectifier ST303C.C s e rie s INVERTER GRADE THYRISTORS Puk Version Features • Metal case with ceramic insulator ■ International standard case TO-200AB E-PUK ■ All diffused design ■ Center amplifying gate ■ Guaranteed high dV/dt

Contextual Info: Bulletin 125173/B International S R ectifier ST303S S E R IE S Stud Version INVERTER GRADE THYRISTORS Features • A ll d iffu s e d d e s ig n ■ C e n te r a m p lify in g g a te ■ G u a ra n te e d h ig h d v /d t ■ G u a ra n te e d h ig h d i/d t

TSM 30 CK 1200

Abstract: I25237
Contextual Info: Bulletin I25237 10/06 ST303CLPbF SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC B-PUK All diffused design Center amplifying gate Guaranteed high dV/dt 515A Guaranteed high dI/dt

T303C

Abstract: SW2800
Contextual Info: Bulletin I25236 10/06 ST303CPbF SERIES INVERTER GRADE THYRISTORS Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt 620A

Irf 1540 N

Abstract: RC snubber thyristor design Irf 1540 G ST303C.C Series 200AB ST303C
Contextual Info: Bulletin I25172 rev. A 05/94 ST303C.C SERIES INVERTER GRADE THYRISTORS Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK 620A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt

ST303S

Abstract: W08K
Contextual Info: Bulletin I25173 rev. B 03/94 ST303S SERIES Stud Version INVERTER GRADE THYRISTORS Features 300A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance

ST083S

Abstract: CS 15 thyristor EK 1E1
Contextual Info: Bulletin I25185 rev. B 03/94 ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features 85A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance

AL 2450 dv

Abstract: ST083S thyristor cp 04 95
Contextual Info: Previous Datasheet Index Next Data Sheet Bulletin I25185/B ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features 85A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance

Irf 1540 G

Abstract: Irf 1540 N RC snubber thyristor design ST303C
Contextual Info: Bulletin I25186 rev. A 05/94 ST303C.L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC B-PUK 515A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt

303CL

Abstract: modified sine wave power inverter 303C ST303C 1e4d
Contextual Info: ST303CLPbF Series Vishay High Power Products Inverter Grade Thyristors Hockey PUK Version , 515 A FEATURES • • • • • • • • • • • TO-200AC (B-PUK) PRODUCT SUMMARY IT(AV) Metal case with ceramic insulator All diffused design Center amplifying gate

Contextual Info: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

303CL

Abstract: 60598-1 I25237 TSM 30 CK 1200
Contextual Info: Bulletin I25237 10/06 ST303CLPbF SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC B-PUK All diffused design Center amplifying gate Guaranteed high dV/dt 515A Guaranteed high dI/dt

Contextual Info: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

Contextual Info: ST303CLPbF Series Vishay High Power Products Inverter Grade Thyristors Hockey PUK Version , 515 A FEATURES • • • • • • • • • • • TO-200AC (B-PUK) PRODUCT SUMMARY IT(AV) Metal case with ceramic insulator All diffused design Center amplifying gate

AN-994

Abstract: C-150 IRF530S IRGS6B60KD IRGSL6B60KD
Contextual Info: PD - 95229 IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

AN-994

Abstract: C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD
Contextual Info: PD - 95229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

C-150

Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
Contextual Info: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 95229C IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

A12Q

Contextual Info: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

Contextual Info: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGB6B60KDPBF

Abstract: AN-994 C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRF53
Contextual Info: PD - 95229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.