ELECTRICAL CIRCUIT NF 2500 Search Results

LT5554

Abstract: LTC5540 LT5578 LTC5543 LTC5542 LT5570 LT5557 LT5568
Contextual Info: LTC5543 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.4dB at 2500MHz IIP3: 24.5dBm at 2500MHz Noise Figure: 10.2dB at 2500MHz 17.5dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption

MB15F03SL

Abstract: MB15F86UL NC11 TSSOP-20
Contextual Info: Jun. 2001 Edition 2.0 ASSP Fractional-N PLL Frequency Synthesizer MB15F86UL n DESCRIPTION The Fujitsu MB15F86UL is Fractional-N Phase Locked Loop PLL frequency synthesizer with fast lock up funcional. The Fractional-N PLL operating up to 2500*MHz and the integer PLL operating up to 600MHz are integrated on a chip.

LGA-16 land pattern

Abstract: lga16 land pattern LGA16 L3G3250A LGA-16 tray data for lga16 L3G3250ATR Gyroscope technical data ST LGA-16
Contextual Info: L3G3250A MEMS motion sensor: three-axis analog gyroscope Preliminary data Features • Two selectable full scales 625/2500 dps ■ Embedded self-test ■ Wide supply voltage range: 2.4 V to 3.6 V ■ Embedded power-down and sleep mode ■ Embedded low-pass filter

abb press pack igbt

Abstract: 5SNA ABB 240 IGBT abb
Contextual Info: VCE IC = = 2500 V 700 A IGBT Press pack 5SNA 0700D250003 • • • • • • • Doc. No. 5SYA1504-02 Apr.01 Low on-state voltage drop Integrated heat sink Short Circuit rated Highly rugged switching SOA Low forward voltage High Voltage, high current capability

Contextual Info: RF2878 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER Package Style: SOT 5-Lead Features      Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.5V to 5.0V Power Supply 150MHz to 2500MHz Operation Applications

Contextual Info: RF2878 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT 5-Lead Features „ „ „ „ „ Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.5V to 5.0V Power Supply 150MHz to 2500MHz Operation

nf 0036 diode

Abstract: CM400DY-50H
Contextual Info: MITSUBISHI HVIGBT MODULES CM400DY-50H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H ● IC . 400A ● VCES . 2500V

CM1200HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HB-50H ● IC . 1200A ● VCES . 2500V

CM800HA-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HA-50H ● IC . 800A ● VCES . 2500V

CM1200HA-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HA-50H ● IC . 1200A ● VCES . 2500V

Contextual Info: QIS2510001 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Single Discrete IGBT 100 Amperes/2500 Volts A C D H E E (3) G F G (2) B C (BASE) E (1) J Q P N Description: Powerex Single Non-isolated Discrete is designed specially for

THS4060

Abstract: IC 351 SKIM
Contextual Info: SKiM 351 GD 063 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 600 600 350 / 280 700 / 560 ± 20 926 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

c1217

Abstract: transistor C1215 CONEXANT transistor D292 C1215 C1216 C1218 C1242 C300 CX65003
Contextual Info: CX65003 1400 - 2500 MHz Linear Power Amplifier Driver Conexant’s CX65003 Microwave Monolithic Integrated Circuit MMIC power amplifier driver offers a desirable combination of features that provide superb performance and ease of use in a low-cost Surface-Mounted Technology (SMT)

Contextual Info: TQ9132-BN Data Sheet Wide Band Power Amplifier Gain Block Features Functional Block Diagram IN 3 6 OUT • • • • • • GND 4 5 GND Applications VDD 1 8 GND GND 2 7 GND TQ9132B Product Description The TQ9132 amplifier is a 500-2500 MHz amplifier capable of providing

Contextual Info: Surface Mount Monolithic Amplifier 50Ω, NE W! MNA-6 500 to 2500 MHz Features • • • • • • • • • 3V & 5V operation micro-miniature size .120"x.120" no external biasing circuit required high isolation, up to 33 to 55 dB typ. wide bandwidth, 500 to 2500 MHz

Contextual Info: Surface Mount Monolithic Amplifier 50Ω, NE W! MNA-2 500 to 2500 MHz Features • • • • • • • • • CASE STYLE: DQ849 PRICE: $1.90 ea. QTY. 30 3V & 5V operation micro-miniature size .120"x.120" no external biasing circuit required high isolation, up to 28 to 43 dB typ.

LQW18ANR10G00D

Abstract: GRH708 SC706 SC70-6 ZAMP002 ZAMP002H6TA ZAMP002H6TC 100PF capacitor
Contextual Info: ZAMP002 800-2500MHz MMIC WIDEBAND AMPLIFIER Medium Power, 22dB Gain, Wide Dynamic Range DESCRIPTION The ZAMP002 is an low current high performance RF amplifier designed for L band and IF applications. Although the ZAMP002 has been designed primarily for DBS applications the ZAMP002 is capable of

E1715

Abstract: TQ9132
Contextual Info: S E M I C 0 N D U C T O R , IN C W ' RELESS COMMUNI CA T I ONS TQ9132 50 mW Driver Amplifier t/i Features The TQ9132 A m p lifie r is part of TriQuint's RFIC B uilding Block fam ily. It is an 800 2500 MHz am plifier capable of providing moderate output power 50 m W for a wide

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-21 500 to 2500 MHz Features • • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 20 dB typ. wide bandwidth, 500 to 2500 MHz

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-28 500 to 2500 MHz Features • • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 18 dB typ. wide bandwidth, 500 to 2500 MHz

PL-077

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-23 500 to 2500 MHz Features • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 18 dB typ. wide bandwidth, 500 to 2500 MHz

ed98

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-28 500 to 2500 MHz Features • • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 18 dB typ. wide bandwidth, 500 to 2500 MHz

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-22 500 to 2500 MHz Features • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 20 dB typ. wide bandwidth, 500 to 2500 MHz

BX 330 transistor

Contextual Info: SIEMENS ICs for Communications Mixer DC - 2.5 GHz and Vector Modulator 80 - 800 MHz PMB 2207 Version 1.0 Preliminary Specification 08.95 T2207-XV10-S1 -7600 PMB 2207 Revision History: Current Version: 08.95 P revious V ersion: Page in previous V ersion Page