ELPIDA 152-BALL POP Search Results

E1751E20

Abstract: EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L
Contextual Info: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-MQ 256M words  8 bits, 2133Mbps EDJ2116DEBG-MQ (128M words  16 bits, 2133Mbps) EDJ2108DEBG-JQ (256M words  8 bits, 1866Mbps) EDJ2116DEBG-JQ (128M words  16 bits, 1866Mbps) Specifications Features

samsung i2s

Abstract: C91C ELPIDA mobile DDR B817 c200h ARM926EJ-S C920 C924 OMAP5912 d438 transistor
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231B December 2003 − Revised March 2004 PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to

transistor C930

Abstract: TRANSISTOR J 5804 AMD 9850 B414 KB transistor d438 arm c840 7038 c930 pin config ELPIDA mobile DDR sensor 3414
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231B December 2003 − Revised March 2004 PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to

TRANSISTOR J 5804

Abstract: p20n10 transistor d438 DATASHEET OF IC 741C machine vision camera price 28Fxxx sensor 3414 C91C C920 C924
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231B December 2003 − Revised March 2004 PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to

EDJ1108DBSE

Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1108DBSE 128M words x 8 bits EDJ1116DBSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization ⎯ 16M words × 8 bits × 8 banks (EDJ1108DBSE) ⎯ 8M words × 16 bits × 8 banks (EDJ1116DBSE)

ELPIDA DDR3

Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1108DJBG 128M words x 8 bits EDJ1116DJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks (EDJ1108DJBG)  8M words × 16 bits × 8 banks (EDJ1116DJBG)

Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1108DBSE 128M words x 8 bits EDJ1116DBSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization ⎯ 16M words × 8 bits × 8 banks (EDJ1108DBSE) ⎯ 8M words × 16 bits × 8 banks (EDJ1116DBSE)

EDJ1108DJBG-DJ-F

Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1108DJBG 128M words x 8 bits EDJ1116DJBG (64M words × 16 bits) • Density: 1G bits • Organization 16M words × 8 bits × 8 banks (EDJ1108DJBG) 8M words × 16 bits × 8 banks (EDJ1116DJBG) • Package 78-ball FBGA (EDJ1108DJBG)

ELPIDA DDR3

Abstract: EDJ2116DEBG-DJ-F EDJ2108DEBG-GN bc4 bt ELPIDA DDR3 2G ELPIDA DDR3 User
Contextual Info: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG 256M words x 8 bits EDJ2116DEBG (128M words × 16 bits) Specifications Features • Density: 2G bits • Organization:  32M words × 8 bits × 8 banks (EDJ2108DEBG)  16M words × 16 bits × 8 banks (EDJ2116DEBG)

EDJ2116DEBG-DJ-F

Abstract: edj2116debg EDJ2116DEBG-GN-F ELPIDA DDR3 EDJ2108DEBG ELPIDA DDR3 2G
Contextual Info: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG 256M words x 8 bits EDJ2116DEBG (128M words × 16 bits) Specifications Features • Density: 2G bits • Organization:  32M words × 8 bits × 8 banks (EDJ2108DEBG)  16M words × 16 bits × 8 banks (EDJ2116DEBG)

ELPIDA DDR3

Abstract: ELPIDA DRAM selection guide ELPIDA DDR3 User
Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1108DJBG 128M words x 8 bits EDJ1116DJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks (EDJ1108DJBG)  8M words × 16 bits × 8 banks (EDJ1116DJBG)

EDJ1108DBSE

Abstract: EDJ1116DBSE-DJ-F EDJ1108DBSE-GN-F EDJ1116DBSE EDJ1108DBSE-DJ-F EDJ1116DBSE-GN-F ELPIDA DDR3 EDJ1108 EDJ1116DBSE-DJ 78-Ball
Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1108DBSE 128M words x 8 bits EDJ1116DBSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks (EDJ1108DBSE)  8M words × 16 bits × 8 banks (EDJ1116DBSE)

Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR3 SDRAM EDJ5316DBBG 32M words x 16 bits Specifications Features • Density: 512M bits • Organization: 4M words × 16 bits × 8 banks • Package: 96-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.5V ± 0.075V

ELPIDA DDR3

Abstract: DDR3 jedec
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR3 SDRAM EDJ5316DBBG 32M words x 16 bits Specifications Features • Density: 512M bits • Organization: 4M words × 16 bits × 8 banks • Package: 96-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.5V ± 0.075V

MT29C4G48MAZAPAKQ-5

Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

MT29F4G08ABA

Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
Contextual Info: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

G86 770 A2

Abstract: nvidia g86-730 u4614 ICS9LPR363DGLF g86 630 a2 thyristor t24 CX20549-12Z NB8P-SE-256M max8736a benq m23 AT
Contextual Info: 5 4 3 PCB STACK UP D 2 1 PB2/PB2A BLOCK DIAGRAM LAYER 1 : TOP LAYER 2 : SGND1 LAYER 3 : IN1 LAYER 4 : SVCC LAYER 5 : IN2 LAYER 6 : IN3 LAYER 7 : SGND2 LAYER 8 : BOT 01 PCI DEVICES IRQ ROUTING PCI DEVICE IDSEL# REQ# / GNT# Interrupts AD17 REQ0# / GNT0# INT A/B#

Quanta AT8

Abstract: quanta u36 max8774 MCP51 MAX8774 AMD socket s1 C51M CX20549 max8774 pwm Samsung R418 kb3920
Contextual Info: 1 2 PCB STACK UP LAYER 1 : TOP RUN POWER SW LAYER 2 : SGND1 A 3 4 AC/BATT CONNECTOR PG 36,37 BATT CHARGER LAYER 3 : IN1 5 6 PG 38 PG 34 DC/DC +3VSUS +5VSUS LAYER 4 : IN2 DDRII 667mhz DDRII-SODIMM1 LAYER 5 : VCC PG 5 LAYER 7 : SGND2 DDRII 667mhz HT Link PCI-E

MT29C4G48MAZBBAKQ-48 IT

Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)

kb3926

Abstract: RTM875T-606 RTM875 G3-64 820p fcbga G966-25 cntr cd1 100 1p0 Quanta AT3 at3 block diagram KB3920 KB3926 AT5 C833
Contextual Info: 1 2 PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND1 A 3 04-06-08-12-F- 4 0402 footprint 0603 footprint 0805 footprint 1206 footprint 1% tolerance 5 6 7 8 AT3 BLOCK DIAGRAM CPU THERMAL SENSOR CPU Merom LAYER 3 : IN1 01 14.318MHz A PAG 5 LAYER 4 : IN2 478P uPGA /35W

me4856

Abstract: kb3926 KB3926 AT5 C833 Quanta at5 FBM2125 HM330-T TPS51116REGR kb3926 d2 0805 footprint me3424 quanta
Contextual Info: 1 2 PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND1 A 3 04-06-08-12-F- 4 0402 footprint 0603 footprint 0805 footprint 1206 footprint 1% tolerance 5 6 7 8 01 AT5 BLOCK DIAGRAM CPU THERMAL SENSOR CPU Merom LAYER 3 : IN1 14.318MHz A PAG 5 LAYER 4 : IN2 478P uPGA /35W

MT29F4G08ABA

Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAPŒ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,

MT29F4G08ABA

Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,

KB3920

Abstract: kb3926 mcp67m quanta at1 DQ15 Discrete Nvidia MCP67 kb3926 d3 GFX27M rtl8211b MCP67d
Contextual Info: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2