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    ELPIDA DRAM SELECTION GUIDE Search Results

    ELPIDA DRAM SELECTION GUIDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM25LS2548DM/R Rochester Electronics LLC AM25LS2548 - Chip Select Address Decoder with Acknowledge Visit Rochester Electronics LLC Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy

    ELPIDA DRAM SELECTION GUIDE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ELPIDA

    Abstract: EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E0226E80 Ver.8.0 Date Published June 2002 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2001-2002 DRAM Selection Guide CONTENTS 1. SDRAM . 4


    Original     		PDF E0226E80 M01E0107 ELPIDA EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA

    pc2-5300

    Abstract: elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E0853E70 Ver.7.0 Date Published July 2006 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2006 DRAM Selection Guide CONTENTS 1. DDR2


    Original     		PDF E0853E70 240-pin 200-pin M01E0107 pc2-5300 elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE

    EDE2116ACBG

    Abstract: EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E1454E90 Ver.9.0 Date Published September 2009 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2009 DRAM Selection Guide CONTENTS 1. DDR3


    Original     		PDF E1454E90 240-pin M01E0706 EDE2116ACBG EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG

    EDE2116ACBG

    Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM Selection Guide CONTENTS 1. DDR3


    Original     		PDF E1610E30 240-pin M01E0706 EDE2116ACBG EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F

    Untitled

    Abstract: No abstract text available
    Text: 512Mb DDR II SDRAM Specification P3R12E2GEU/F P3R12E3GEU/F Deutron Electronics Corp. 8F, 68, Sec. 3, NanKing E. RD., Taipei 104, Taiwan, R.O.C. TEL: 886 -2-2517-7768 FAX: (886)-2-2517-4575 http://www.deutron.com.tw 512Mb DDRII Synchronous DRAM P3R12E2GEU/F


    Original     		PDF 512Mb P3R12E2GEU/F P3R12E3GEU/F P3R12E2/3GE/U 60-ball

    EDE5104ABSE

    Abstract: EDE5104ABSE-5A-E EDE5108ABSE EDE5116ABSE
    Text: PRELIMINARY DATA SHEET 512M bits DDR-II SDRAM EDE5104ABSE 128M words x 4 bits EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits) Description Features The EDE5104AB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks.


    Original     		PDF EDE5104ABSE EDE5108ABSE EDE5116ABSE EDE5104AB EDE5108AB 64-ball EDE5116AB 84-ball M01E0107 E0323E20 EDE5104ABSE EDE5104ABSE-5A-E EDE5108ABSE EDE5116ABSE

    EDE5104GBSA

    Abstract: EDE5104GBSA-5A-E EDE5108GBSA EDE5116GBSA
    Text: PRELIMINARY DATA SHEET 512M bits DDR-II SDRAM EDE5104GBSA 128M words x 4 bits EDE5108GBSA (64M words × 8 bits) EDE5116GBSA (32M words × 16 bits) Description Features The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks.


    Original     		PDF EDE5104GBSA EDE5108GBSA EDE5116GBSA EDE5104GB EDE5108GB 64-ball M01E0107 E0249E30 EDE5104GBSA EDE5104GBSA-5A-E EDE5108GBSA EDE5116GBSA

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR-II SDRAM EDE5104ABSA 128M words x 4 bits EDE5108ABSA (64M words × 8 bits) EDE5116ABSA (32M words × 16 bits) Description Features The EDE5104AB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks.


    Original     		PDF EDE5104ABSA EDE5108ABSA EDE5116ABSA EDE5104AB EDE5108AB 64-ball EDE5116AB 84-ball M01E0107 E0323E11

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR-II SDRAM EDE5104ABSA 128M words x 4 bits EDE5108ABSA (64M words × 8 bits) EDE5116ABSA (32M words × 16 bits) Description Features The EDE5104AB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks.


    Original     		PDF EDE5104ABSA EDE5108ABSA EDE5116ABSA EDE5104AB EDE5108AB 64-ball EDE5116AB 84-ball M01E0107 E0323E10

    EDE5104ABSE-5C-E

    Abstract: EDE5108ABSE EDE5116ABSE EDE5104ABSE
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104ABSE 128M words x 4 bits EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits) Description Features The EDE5104AB is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks.


    Original     		PDF EDE5104ABSE EDE5108ABSE EDE5116ABSE EDE5104AB EDE5108AB 64-ball EDE5116AB 84-ball M01E0107 E0323E30 EDE5104ABSE-5C-E EDE5108ABSE EDE5116ABSE EDE5104ABSE

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5104AESK 128M words x 4 bits EDE5108AESK (64M words × 8 bits) Description Features The EDE5104AE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108AE is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks.


    Original     		PDF EDE5104AESK EDE5108AESK EDE5104AE EDE5108AE 60-ball M01E0107 E0562E30

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AESK 128M words x 4 bits EDE5108AESK (64M words × 8 bits) Description Features The EDE5104AE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108AE is a 512M bits DDR2 SDRAM


    Original     		PDF EDE5104AESK EDE5108AESK EDE5104AE EDE5108AE 60-ball M01E0107 E0562E20

    DDR2-667

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM for HYPER DIMM EDE5108ABSE-BE, -AE 64M words x 8 bits Description Features The EDE5108AB is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks. It is packaged in 64-ball FBGA package. • 1.8V power supply


    Original     		PDF EDE5108ABSE-BE, EDE5108AB 64-ball M01E0107 E0540E11 DDR2-667

    DDR2-533

    Abstract: DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-400
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Description Features The EDE5116AFSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package. • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE EDE5116AFSE 84-ball M01E0107 E0705E20 DDR2-533 DDR2-667 EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-400

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Description Features The EDE5116AFSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package. • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE EDE5116AFSE 84-ball M01E0107 E0705E30

    E5116

    Abstract: DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Specifications Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E51 E5116 DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM for HYPER DIMM EDE2508ABSE-GE 32M words x 8 bits EDE2516ABSE-GE (16M words × 16 bits) Description Features The EDE2508ABSE is a 256M bits DDR2 SDRAM organized as 8,388,608 words × 8 bits × 4 banks. It is packaged in 60-ball FBGA (µBGA) package.


    Original     		PDF EDE2508ABSE-GE EDE2516ABSE-GE EDE2508ABSE 60-ball EDE2516ABSE 84-ball M01E0107 E0657E10

    DDR2-800

    Abstract: EDE2508ABSE-GE EDE2508ABSE-GE-E EDE2516ABSE-GE EDE2516ABSE-GE-E
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM for HYPER DIMM EDE2508ABSE-GE 32M words x 8 bits EDE2516ABSE-GE (16M words × 16 bits) Description Features The EDE2508ABSE is a 256M bits DDR2 SDRAM organized as 8,388,608 words × 8 bits × 4 banks. It is packaged in 60-ball FBGA (µBGA) package.


    Original     		PDF EDE2508ABSE-GE EDE2516ABSE-GE EDE2508ABSE 60-ball EDE2516ABSE 84-ball M01E0107 E0657E20 DDR2-800 EDE2508ABSE-GE EDE2508ABSE-GE-E EDE2516ABSE-GE EDE2516ABSE-GE-E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM EDE2504AASE 64M words x 4 bits EDE2508AASE (32M words × 8 bits) EDE2516AASE (16M words × 16 bits) Description Features The EDE2504AA is a 256M bits DDR2 SDRAM organized as 16,777,216 words × 4 bits × 4 banks.


    Original     		PDF EDE2504AASE EDE2508AASE EDE2516AASE EDE2504AA EDE2508AA 64-ball EDE2516AA 84-ball M01E0107 E0427E10

    EDE5104ABSE

    Abstract: EDE5104ABSE-4A-E EDE5104ABSE-5C-E EDE5108ABSE EDE5108ABSE-4A-E EDE5108ABSE-5C-E EDE5116ABSE
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5104ABSE 128M words x 4 bits EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits) Description Features The EDE5104ABSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108ABSE is a 512M bits DDR2 SDRAM


    Original     		PDF EDE5104ABSE EDE5108ABSE EDE5116ABSE EDE5104ABSE EDE5108ABSE 64-ball EDE5116ABSE 84-ball M01E0107 E0323E91 EDE5104ABSE-4A-E EDE5104ABSE-5C-E EDE5108ABSE-4A-E EDE5108ABSE-5C-E

    EDE1104AASE

    Abstract: EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE
    Text: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104AASE 256M words x 4 bits EDE1108AASE (128M words × 8 bits) Description Features The EDE1104AA is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AA is a 1G bits DDR2 SDRAM organized


    Original     		PDF EDE1104AASE EDE1108AASE EDE1104AA EDE1108AA 68-ball M01E0107 E0404E10 EDE1104AASE EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104ABSE 128M words x 4 bits EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits) Description Features The EDE5104AB is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks.


    Original     		PDF EDE5104ABSE EDE5108ABSE EDE5116ABSE EDE5104AB EDE5108AB 64-ball EDE5116AB 84-ball M01E0107 E0323E50

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM L EO EDE2504AASE 64M words x 4 bits EDE2508AASE (32M words × 8 bits) EDE2516AASE (16M words × 16 bits) Features The EDE2504AA is a 256M bits DDR2 SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDE2508AA is a 256M bits DDR2 SDRAM


    Original     		PDF EDE2504AASE EDE2508AASE EDE2516AASE E0427E11 M01E0107

    EDE2516ABSE-GE

    Abstract: EDE2516ABSE-GE-E DDR2-800 EDE2508ABSE-GE EDE2508ABSE-GE-E
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM for HYPER DIMM EDE2508ABSE-GE 32M words x 8 bits EDE2516ABSE-GE (16M words × 16 bits) Specifications Features • Density: 256M bits • Organization  8M words × 8 bits × 4 banks (EDE2508ABSE)  4M words × 16 bits × 4 banks (EDE2516ABSE)


    Original     		PDF EDE2508ABSE-GE EDE2516ABSE-GE EDE2508ABSE) EDE2516ABSE) 60-ball 84-ball 800Mbps EDE2516ABSE-GE EDE2516ABSE-GE-E DDR2-800 EDE2508ABSE-GE EDE2508ABSE-GE-E