EM 18 Search Results

Contextual Info: REVISION L TA B LE 4 END TO END "L" DV TO DV DV TO EM -TEX DV TO EM (-SEX) EM (-TEX) TO EM (-TEX) EM (-TEX) TO EM (-SEX) EM (-SEX) TO EM (-SEX) DV-N TO DV-N DV-N TO EM -N (-TEX) DV-N TO EM -N (-SEX) 1.150[28.21 ] 1.0 6 5[27 .05] 1.0 3 6[26 .31 ] .980(24.89]

853f

Abstract: 4007D 4011d MEM780P 4016P 4007F MEM855P mu-6-0103 855F MEM851P
Contextual Info: MOSFETs C/MOS & MULTIFET DEVICES COMPOSANTS MOSFÈTs C/MOS & MULTIFET MOSFETs C/MOS & MULTIFET BAUELEMENTE MULTIFET SW ITCHES ELECTRICAL CHARACTERISTICS No. Part Ho. # *M EM 780P * M EM 780D * M EM 780F JF*MEM 851P *M EM 851D *M EM 851F ‘ M EM 853P *M EM 853D

EM1C

Abstract: AM01 AM01A AM01Z EM01 EM01A EM01Z EM 1C
Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. AM01Z AM01 AM01A EM01Z EM01 EM01A EM 1Y EM 1Z EM 1 EM 1A EM 1B EM 1C 200 400 600 200 400 600 100 200 400 600 800 1000 IFSM (A) Tj (°C)

EM1C

Contextual Info: Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. AM01Z AM01 AM01A EM01Z EM01 EM01A EM 1Y EM 1Z EM 1 EM 1A EM 1B EM 1C 200 400 600 200 400 600 100 200 400 600 800 1000 IFSM

ASP Series samtec

Contextual Info: F -21 1-1 E R F 8 -0 2 0 -0 1 -L -D -E M 2 -T R E R M 8 -0 6 0 -0 1 -L -D -E M 2 -T R 0,80mm .0315" ERM 8-EM , ERF8-EM SERIES RUGGED EDGE MOUNT STRIPS ERM8-EM Board Mates: ERF8 ERM8-EM Cable Mates: ERCD, ERDP ERM8 ERF8-EM Board Mates: ERM8 ERF8-EM Cable Mates:

6cb6

Abstract: AMPLIFICADOR
Contextual Info: IBBAFE MINIWATT PENTODO para uso como amplificadora de R.F. em rádios e F.I. em televisáo. Aquecimento: indireto por A.C. ou D.C. alimentacáo em série Vf = 3,15 V I = 0,6 A Tempo de aquecimento : 11 ssgundos Dimensóes em mm mqxfl al S 83 6 j2 ff555Jjí

Contextual Info: KS58555B UNIVERSAL 15 MEMORY DIALER INTRODUCTION The KS58555B is 15 m em ory Tone/pulse sw itchable dialer with 32 digit redial m em ory. 16 digit indirect 10 m em ory and 16 digit direct 4 m em ory are possible. T h e Flash tim e is selectable on the keyboard.

Contextual Info: F-207 0,635mm Q2 EDGE MOUNT QFS-EM SERIES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?QMS-EM or www.samtec.com?QFS-EM Insulator Material: Liquid Crystal m Polymer Terminal & Ground Plane Material: Phosphor Bronze

S46 SMD

Abstract: SPG8640 EM6607 SPG8640AN EM6617 EM6620 EM6621 EM6622 EM6625 EM6640
Contextual Info: R EM MICROELECTRONIC - MARIN SA EME66xx Hardware Description EM66xx IN-CIRCUIT EMULATOR HARDWARE DESCRIPTION Version 2.8 October 2005 Copyright 2005, EM Microelectronic-Marin SA 1 www.emmicroelectronic.com EME66xx R Hardware Description Copyright © 2005, EM Microelectronic-Marin SA

diode IN 4007

Abstract: EM 4001 in 4007 in 4007 diode EM518 diode 1N 4001 diode 1N 4002 diode 4007 em 518 diode in 4007 datasheet
Contextual Info: 1N 4001 . 1N 4007, 1N 4007-1300 EM 513, EM 516, EM 518 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung -0.1 50…2000 V Plastic case Kunststoffgehäuse 5.1 -0.1 Type

SMD DIODE 513

Contextual Info: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V

1n 4007

Abstract: CA 4007 Gleichrichter
Contextual Info: 1N 4001 . 1N 4007, 1N 4007-1300 EM 513, EM 516, EM 518 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung -0.1 50…2000 V Plastic case Kunststoffgehäuse 5.1 -0.1 62.5 ±0.5

Y1031

Abstract: equivalent transistor 2 SA 1469 tqfp 10x10 tray SO24 package m 4953 metal detector plans EM6503 EM6504 SO18 Package EM6517
Contextual Info: EM MICROELECTRONIC - MARIN SA EM65XX EM65XX Datasheet MFP versions of EM66XX Mask Rom EM Microelectronic-Marin SA Tel +41 32 755 51 11 Fax +41 32 755 54 03 http://www.emmicroelectronic.com Copyright 2005, EM Microelectronic-Marin SA 1 www.emmicroelectronic.com

Contextual Info: E R F 8 -0 2 0 -0 1 -L -D -E M 2 -T R RUGGED EDGE MOUNT STRIPS ERM8-EM Board Mates: c d t /i o ERF8 ERM8-EM Cable Mates: PLATING OPTION P N POSITIONS ER M 8Q per row DnEM 2 OTHER OPTION ERCD, ERDP ERF8-EM Board Mates: -L ERM8 ERF8-EM Cable Mates: ERCD, ERDP

Contextual Info: F-205-1 -EM2 H SEC8-130-01-SM -D-EM 2 ,80mm HI-SPEED SOCKET SPECIFICATIONS HSEC8-EM SERIES Mates with 1,60mm .062" cards Mates with: 1,6mm thick cards, EEDP For complete specifications see www.samtec.com?HSEC8-EM Insulator Material: Liquid Crystal Polymer

EM6503

Abstract: EM6504 EM6505 EM6517 EM6520 EM6521 EM6522 EM65XX EM6523 SO18 Package
Contextual Info: EM MICROELECTRONIC - MARIN SA EM65XX EM65XX Datasheet MFP versions of EM66XX Mask Rom EM Microelectronic-Marin SA Tel +41 32 755 51 11 Fax +41 32 755 54 03 http://www.emmicroelectronic.com 03/02 REV. H/447 Copyright  2002, EM Microelectronic-Marin SA

X8C43

Contextual Info: BiCMOS CURRENT MODE PWM CONTROLLER TC18C43 TC28C43 TC38C43 ABSOLUTE MAXIMUM RATINGS* Supply V o lta g e .18V Maximum Chip T em perature. 150°C Storage T em pe rature .-65 °C to +150°C

Contextual Info: JBBBF DRALORIC Inhaltsverzeichnis S o m m a ire Index Typ Kurven: Lastm inderung, Obertem peratur Lackierte Drahtdrehw iderstände Lackierte Drahtdreh w iderstände Z em en tierte Drahtdrehw iderstände Z em en tierte Drahtdrehw iderstände Z em en tierte Drahtdrehw iderstände

Contextual Info: O500, O300 Nova categoria de desempenho em tecnologia de sensores ópticos Excelência em desempenho em dois tamanhos. NextGen O300/O500 O nome Baumer sempre foi sinônimo de inovação. Nossos novos­­sensores ópticos fazem parte desta tradição e agora estão

Contextual Info: Memory IC 16kbit serial ferroelectric memory BR 24C F16F The BR24CF16F is a non-volatile ferroelectric m em ory developed for use in ROHM’s non-volatile m em ory technolo­ gy and ferroelectric technology. Using a ferroelectric m em ory enables faster w riting speeds than EEPROM and flash

188es board

Abstract: AMD k86
Contextual Info: A m 186 EM an d A m 188™ EM Advanced Micro Devices High-Performance, 80C186- and 80C188-Compatible, 16-Bit Embedded Microcontrollers DISTINCTIVE CHARACTERISTICS • E86™ fami ly 80C186- and 80C188-com patible m icrocontrollers with enhanced bus interface

Contextual Info: F -2 0 4 MEC1 -1 30-02-S-D-EM 1 M EC1-108-02-L-D-EM 2-NP For complete specifications see www.samtec.com "MEC1 -EM Insulator Materia Black LCP Contact Material Phosphor Bronze Current Rating: Testing Now! Operating Temp Range: -.i ^ in . -65°C to +105°C w ith '

Contextual Info: ííStandex Europe: +49 / 7731 8399 0 I Em ail: info@ m eder.com Ite m N o.: US A: +1 / 508 295 0771 I Em ail: salesusa@ m eder.com 2500001206 Asia: + 8 5 2 /2 9 5 5 1682 I Em ail: salesasia@ m eder.com Item : ELECTRONICS M11/B6 magnet Special Product Data

K-Line L line

Abstract: pin diagram of ic 8088 TLE8088EM K-line interface circuit tle8 24 pin K-line K-line interface internal block diagram of 8088 interface K-Line K-Line transceiver
Contextual Info: TLE 8088 EM Engine management IC for Small Engines Data Sheet Rev 1.0, 2012-10-01 Automotive Power TLE 8088 EM Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3