AWM style 2789 VW-1
Abstract: TDA 0200
Text: HARTING Cable Assemblies People | Power | Partnership HARTING worldwide Transforming customer wishes into concrete solutions The HARTING Technology Group is skilled in the fields of electrical, electronic and optical connection, transmission and networking, as well as in manufacturing, mechatronics and
|
Original
|
PDF
|
MO/21
AWM style 2789 VW-1
TDA 0200
|
Untitled
Abstract: No abstract text available
Text: P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 0.155 3.94 0.130(3.30) FEATURES • For surface mounted applications in order to optimize board space. 0.083(2.11) 0.075(1.91)
|
Original
|
PDF
|
E210467
2002/95/EC
|
ST EZ 711 253
Abstract: ST EZ 725
Text: P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 0.155 3.94 0.130(3.30) FEATURES • For surface mounted applications in order to optimize board space. 0.083(2.11) 0.075(1.91)
|
Original
|
PDF
|
E210467
2002/95/EC
RB500V-40
ST EZ 711 253
ST EZ 725
|
SMBJ8.5CA
Abstract: marking code MF marking code KP marking code nt marking WM SMBJ15A SMBJ11CA DK marking code SMBJ15 SMBJ18* GS
Text: MCC SMBJ5.0 THRU SMBJ170CA omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features l For surface mount applicationsin or der to optimize boar d space l L ow pr ofil e package l Fast response time: typical less than 1.0ps from 0 volts to
|
Original
|
PDF
|
SMBJ170CA
DO-214AA
MIL-STD-750,
SMBJ130C
SMBJ130CA
SMBJ150C
SMBJ150CA
SMBJ160C
SMBJ160CA
SMBJ8.5CA
marking code MF
marking code KP
marking code nt
marking WM
SMBJ15A
SMBJ11CA
DK marking code
SMBJ15
SMBJ18* GS
|
wm bn bm 04
Abstract: SMBJ8.5CA SMBJ11CA SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ16CA SMBJ6.5A SMBJ160CA
Text: MCC SMBJ5.0 THRU SMBJ170CA omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features l For surface mount applicationsin or der to optimize boar d space l L ow pr ofil e package l Fast response time: typical less than 1.0ps from 0 volts to
|
Original
|
PDF
|
SMBJ170CA
DO-214AA
DO-214AA
MIL-STD-750,
10/10vision:
SMBJ170C
SMBJ130C
SMBJ130CA
SMBJ150C
SMBJ150CA
wm bn bm 04
SMBJ8.5CA
SMBJ11CA
SMBJ170A
SMBJ17A
SMBJ14CA
SMBJ16CA
SMBJ6.5A
SMBJ160CA
|
SMBJ8.5CA
Abstract: SMBJ11CA SMBJ8.0A marking code mf mcc kd smbj marking code DX wm bn bm 04 SMBJ130A SMBJ170A SMBJ130CA
Text: MCC TM Micro Commercial Components SMBJ5.0 THRU SMBJ170CA omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features l For surface mount applicationsin or der to optimize boar d space l L ow pr ofil e package
|
Original
|
PDF
|
SMBJ170CA
DO-214AA
MIL-STD-750,
SMBJ130C
SMBJ130CA
SMBJ150C
SMBJ150CA
SMBJ160C
SMBJ160CA
SMBJ8.5CA
SMBJ11CA
SMBJ8.0A
marking code mf
mcc kd
smbj marking code DX
wm bn bm 04
SMBJ130A
SMBJ170A
SMBJ130CA
|
P6SMBJ10
Abstract: P6SMBJ10A P6SMBJ11 P6SMBJ11A P6SMBJ12 P6SMBJ220
Text: P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.0 to 220 Volts PEAK PULSE POWER 600 Watts SMB/DO-214AA Unit: inch mm FEATURES • For surface mounted applications in order to optimize board space. .155(3.94) .130(3.30) • Low profile package
|
Original
|
PDF
|
SMB/DO-214AA
P6SMBJ10
P6SMBJ10A
P6SMBJ11
P6SMBJ11A
P6SMBJ12
P6SMBJ220
|
P6SMBJ10
Abstract: P6SMBJ10A P6SMBJ11 P6SMBJ220
Text: P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief
|
Original
|
PDF
|
E210467
2002/95/EC
DO-214AA
MIL-STD-750
P6SMBJ10
P6SMBJ10A
P6SMBJ11
P6SMBJ220
|
Untitled
Abstract: No abstract text available
Text: P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief
|
Original
|
PDF
|
E210467
2002/95/EC
DO-214AA
MIL-STD-750
|
DIN 50014
Abstract: cny18 TFK 4 232 CNY18 -IV cny 76 TFK CNY 18 IV cny18 tfk
Text: «Sr CNY18 Optoelektronisches Koppelelement Optically Coupled Isolator Aufbau Construction Emitter: D etektor: G aAs-Lum ineszenzdiode Silizium-NPN-Epitaxial-Planar-Fototransistor Anwendungen: Galvanische Trennung von Strom kreisen, rückw irkungsfreier Schalter
|
OCR Scan
|
PDF
|
CNY18
DIN 50014
cny18
TFK 4 232
CNY18 -IV
cny 76
TFK CNY 18 IV
cny18 tfk
|
SOT230
Abstract: 234 optocoupler CNX62A BS415 BS7002 T30 transistor
Text: Product specification P h ilip s Sem icon du ctor« High-voltage optocoupler CNX62A FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of A C and DC Insulation 3750 V (RMS and
|
OCR Scan
|
PDF
|
CNX62A
CNX62A
OT230
SQT230
E90700
Z2406J
fab53Â
SOT230
234 optocoupler
BS415
BS7002
T30 transistor
|
SI 9503
Abstract: No abstract text available
Text: mmmm DIP 14 KJ I CJ B 3 • mm Q io i g • N t j oo Í o > > > i C c £ 5 > > Í ■Í 6 .4± o.2 : mm Q g T cn 2 > fX " cü o c £ ? } ? £ £ 5 £ } £ ■Í 5= 1 ? i» £ .£ t ip 0 .5 1 M IN 4 .7 M A X 2 .8 M IN I?s 1 6.4 i I DIP22 Oí DIP20 : mm uiui : 73
|
OCR Scan
|
PDF
|
DIP22
DIP20
QFP64-B2
QFP64-B3
QFP64-C2
QFP64-EI
QFP80-CK2)
QFP80-C2
QFPI00-C2
QFP64-G
SI 9503
|
2SC3847
Abstract: 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947
Text: FUJITSU MICROELECTRONICS 31E D B 3 7 4 c]7t.5 D 0 1 b b 4 S 4 Q FMI r January 1990 Edition 1.1 - — - 3 3 FUJITSU PRODUCT PROFILE 2SC3947 Silicon High Speed Power Transistor 2SC3947 50 0 V , 5A A B S O L U T E M A X IM U M R A T IN G S Parameter Sym bo l
|
OCR Scan
|
PDF
|
D01fc
2SC3947
2SC3947
2SC3842
2SC3843
2SC3844
2SC3845
2SC3846
2SC3847
|
transistor NEC B 617
Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and
|
OCR Scan
|
PDF
|
2SC5010
2SC5010
transistor NEC B 617
nec 2035 744
zo 607 p 408
7749 transistor
ic 151 811
transistor 3568
|
|
|
Untitled
Abstract: No abstract text available
Text: ADV MICRO MEMORY I 57C4500-40/50/65/80 IM E D I 0557520 002022^ 2 • a High Density First-in First-out FIFO 256x9 CMOS Memory Advance Information ¡3 DISTINCTIVE CHARACTERISTICS o § Retransmit capability Expandable In both width and_depth Increased noise Immunity for XI - CMOS
|
OCR Scan
|
PDF
|
57C4500-40/50/65/80
256x9
57C4500
|
X85C
Abstract: BDX 71 bdx85 3ALF bdx85b BDX86B X85B
Text: fZ T ^ 7 # S C S -T H O M S O N * ^ ( a & lO T ( g M S B D X 8 5 /8 5 A /8 5 B /8 5 C B D X 8 6 / 8 6 A /8 6 B /8 6 C POWER DARLINGTONS DESCRIPTION The BDX 85, BDX 85A, BDX 85B and BDX 85C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun
|
OCR Scan
|
PDF
|
|
S219P
Abstract: ep 1387
Text: TELEFUNKEN ELECTRONIC 17E 1> fl^SOQ^b OOOflSflE 0 IAL66 S 219 P TStUllFMI^IN electronic CrMtn* Technotog*s - Silicon Photo PIN Diode P-Type Applications: T-Ml'53 Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's. -Detector for optical communication, e. g. for optical-fiber transmission systems and
|
OCR Scan
|
PDF
|
IAL66
S219P
ep 1387
|
MA702C
Abstract: MA776C MA740A 715C MA709C MA747 MAF355 MA776
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-OA1 /iA302, mA310, mA714C/E/L L -O A 2 MA307 L-OA3 mA308, mA308A NC vMetal Can and Mini-Dip Connection Shown L -O A 4 MÄ702C L -O A 5 mA 7 0 9 C IN F R E Q C O M P L-OA6 M Ä725C/E n c K F T TAB V- Metal Can and Mini-Dip
|
OCR Scan
|
PDF
|
mA302,
mA310,
mA714C/E/L
mA307
MA709C
mA308,
mA308A
725C/E
mA318,
MAF355,
MA702C
MA776C
MA740A
715C
MA709C
MA747
MAF355
MA776
|
0808M
Abstract: 0808L VN0808M BSR67 VN0808L equivalent VN0808L 2N6661 2n666
Text: WZW* VN0808L ELECTRICAL CHARACTERISTICS Siliconix incorporated t a = 2 S °C u n le s s o th e rw is e n o te d P A R A M E T E R S /T E S T C O N D IT IO N S D raln-S o u rce Breakdown Voltage V q s = 0 , I q = 10 jxA Sym bol M in . T yp . M ax. V(BR)DSS
|
OCR Scan
|
PDF
|
VN0808L
0808L
0808M
O-237
VN0808M
BSR67
VN0808L equivalent
VN0808L
2N6661
2n666
|
67F100
Abstract: idf22f
Text: O K I semiconductor MSM6240_ D O T M A T R IX LCD C O N TR O LLER G EN ER A L DESCRIPTION The O KI MSM6240GS is a CMOS Si-gate LSI to co ntro l large size d ot m a trix LCD in characters and graphics. Three kinds o f display modes are provided; Semi-graphic mode. Full-graphic m ode arid Character mode.
|
OCR Scan
|
PDF
|
MSM6240_
MSM6240GS
80/line
MSM5260GS,
MSM6240GS.
MSM6240
67F100
idf22f
|
603 57F
Abstract: pin diagram of serial lcd display 16x2 6240G
Text: O K I Semiconductor MSM6240 D O T M A T R IX L C D C O N T R O L LE R GENERAL DESCRIPTION The M SM 6240G S is a C M O S Si-gate LSI to control a large dot m atrix LC D for characters and graphics. T h ree kinds o f display m odes are provided; Sem i-graphic m ode, Fu ll-graphic m ode and
|
OCR Scan
|
PDF
|
MSM6240
6240G
5260G
603 57F
pin diagram of serial lcd display 16x2
|
358 ez 830
Abstract: EZ 711 253 lz do-214aa smb marking mp DM 311 BG E210467 STAD-MAY25 DM 311 BG 43 ev 2816 P6SMBJ26CA
Text: Q u a l it y C. P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE | 5.0 to 220 Volts I E S t i i l l l l d i i i i i f f l U I 600 W atts I Unit; Inch mm) Recongnized File # E210467 • For surface mounted applications in order to optimize board space.
|
OCR Scan
|
PDF
|
SMB/DO-214AA
E210467
2002/95/EC
DO-214AA
MIL-STD-750
SMB/DO-214AA
0106MAX
65MAX)
050MIN
27MIN)
358 ez 830
EZ 711 253
lz do-214aa
smb marking mp
DM 311 BG
E210467
STAD-MAY25
DM 311 BG 43
ev 2816
P6SMBJ26CA
|
2SK1067
Abstract: high power amp 100mhz 1w
Text: SANYO SEMICONDUCTOR CORP ESE D 7^707^ O O G t m 2SK1067 3 T -3 I-2 S 2057 N-Channel M O S Silicon FET FM Tuner, VHF-Band a _ a _ i : _ i . : _ 2719 F e a tu r e s •Low noise N F = 1.8dB typ f=100M H z • H igh power gain P G = 27dB typ(f= 100MHz)
|
OCR Scan
|
PDF
|
2SK1067
T-31-25
100MHz)
035pF
2SK1067-applied
100nA
high power amp 100mhz 1w
|
BCY 59
Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58
Text: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver
|
OCR Scan
|
PDF
|
Q60203-
BCY 59
BCY 12
BCY58X
BCY 85
BCY59
BCY59X
BCY58
BCY58-VIII
Ucesat
BCY 58
|