Untitled
Abstract: No abstract text available
Text: VS Vision Syst em s Gm bH / Part Num ber 3873 ● ● ● ● ● ● ● ● ● ● Fe a t u r e s VIA Nano 1.3GHz VX800 chipset, 800/500MHz FSB 1 GB DDR2 SDRAM Express Card 34 slot USB interface HD Audio, speaker and microphone HDD/SSD drive bay 2 x Giga LAN
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VX800
800/500MHz
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EM4-EM34
Abstract: philips EM 34 EM34 em 34 philips EM 34 Scans-0017889
Text: PHILIPS EM 34 TUNING INDICATOR with two systems of different sensitivity INDICATEUR D'ACCORD avec deux systèmes de sensibilité différente ABSTIM1IANZEIGER0HRE mit zwei Systemen verschiedener Emp findlichkeit Heating : indirect by A.C. or D.C. series or parallel supply
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7R02789
EH4-BM34
7R02790
EM4-EM34
philips EM 34
EM34
em 34 philips
EM 34
Scans-0017889
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BFR64
Abstract: multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 BFQ34
Text: N AMER PHILIPS/DISCRETE asE d m bb53i3i aoi?ciT? a B FQ 34 is recommended for new design BFR64 T - 3 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N m ulti-em itter transistor in a capstan envelope. The transistor has extrem ely good intermodulation properties and high power gain.
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BFQ34
BFR64
7z72605
BFR64
multi-emitter transistor
BFR64 DATA
vk200 philips
vk200 coil
VK-200-10
7Z7Z609
Transistor D 798
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Untitled
Abstract: No abstract text available
Text: Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N -channel enhancem ent m ode fie ld -e ffe d pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies
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BUK456-1
BUK456
-100B
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philips EM 34
Abstract: EM 4
Text: lM4l PHILIPS TUNING INDICATOR with two systems of different sens itivity INDICATEUR D ’ACCORD avec deux systèmes de sensibili té différente ABSTIMMANZEIGERÖHRE mit zwei Systemen von verschie dener Empfindlichkeit Dimensions in mm Dimensions en mm
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10Abmessungen
philips EM 34
EM 4
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PNP TRANSISTOR marking pr
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 08 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 30 V).
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BF824
SCA63
115002/00/03/pp8
PNP TRANSISTOR marking pr
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BGY241 UHF amplifier module P relim inary specification Philips Sem iconductors 1999 A p r 16 PHILIPS Philips Semiconductors Preliminary specification UHF amplifier module BGY241 FEATURES PINNING - SOT482B • 3.5 V nominal supply voltage
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BGY241
BGY241
OT482B
SCA63
127107/00/02/pp11
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BGY241 UHF amplifier module P relim inary specification Philips Sem iconductors 1999 M ar 25 PHILIPS Philips Semiconductors Preliminary specification UHF amplifier module BGY241 FEATURES PINNING - SOT482B • 3.5 V nominal supply voltage
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BGY241
BGY241
OT482B
SCA63
127107/00/02/pp11
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTION H igh-voltage, high-speed planar-passivated npn pow er sw itching tra n sisto r in a plastic fu ll-p a ck envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor
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BUJ304AX
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N50E
Abstract: PHP33N10E
Text: Philips S em iconductors Product specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N -channel enhancem ent m ode field-effect pow er tra n sisto r in a plastic envelope featuring stable blocking voltage, fast sw itching and high therm al cycling perform ance
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PHP33N10
N50E
PHP33N10E
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transistor marking 2d ghz
Abstract: BFG41OW
Text: DISC RETE S E M IC O N D U C TO R S BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification
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BFG410W
125104/00/04/pp12
transistor marking 2d ghz
BFG41OW
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BFG403W
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors
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BFG403W
125104/00/04/pp12
BFG403W
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bcw 95 transistor
Abstract: transistor NPN 3474 transistor bc 209 npn bc 301 transistor
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING • Low curren t max. 100 mA
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BCW60
BCW61
SCA63
115002/00/03/pp8
bcw 95 transistor
transistor NPN 3474
transistor bc 209 npn
bc 301 transistor
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"MARKING CODE P5"
Abstract: BFG425W
Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors
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BFG425W
125104/00/04/pp12
"MARKING CODE P5"
BFG425W
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X FEATURES PINNING • High power gain DESCRIPTION
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BFG505;
BFG505/X
BFG505
SCA60
125104/00/03/pp16
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SFE10.52MJA10
Abstract: 8745H
Text: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source
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TDA8745
711Dfl2ti
0101E00
SFE10.52MJA10
8745H
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SOT422A
Abstract: BLS3135-65
Text: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES
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BLS3135-65
OT422A
SOT422A
BLS3135-65
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transistor bc 649
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 17 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 FEATURES PINNING • Low curren t max. 100 mA
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BC856;
BC857
BC847.
BC857B
BC857C
SCA63
115002/00/03/pp8
transistor bc 649
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NFM61 SP
Abstract: tekelec TA 355 TEKELEC te 358
Text: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1998 Nov 19 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature
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BLV2045N
BLV2045N
OT39QA
SCA60
/printrun/ed/pp10
NFM61 SP
tekelec TA 355
TEKELEC te 358
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2114 LC
Abstract: L381
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BCV63; BCV63B NPN general purpose double transistors Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN general purpose double transistors
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BCV63;
BCV63B
BCV63B
T143B
BCV64B.
SCA65
115002/00/03/pp8
2114 LC
L381
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RZ3135B15W
Abstract: RZ3135B30W
Text: -L_L N AMER ObE PHILIPS/DISCRETE D bbS3T31 DDlS5ti3 a RZ3135B15W RZ3135B30W PULSED POWER TRANSISTORS FOR S-BAND RADAR N-P-N transistors fo r use in common-base pulsed power amplifiers fo r S-band radar 3,1 to 3,5 G H z . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich
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RZ3135B15W
RZ3135B30W
RZ3135B30W
7Z88S11
RZ3135B15W
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741 LEM
Abstract: AM/amplifier LEM 741
Text: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1999 A p r 23 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature
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BLV2045N
BLV2045N
OT39QA
SCA63
741 LEM
AM/amplifier LEM 741
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LM 886 IC chip
Abstract: TEKELEC te 358
Text: DISCRETE SEMICONDUCTORS BLV2045N UHF power transistor P relim inary specification Philips Sem iconductors 1998 O ct 01 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um te m perature
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BLV2045N
BLV2045N
OT39QA
LM 886 IC chip
TEKELEC te 358
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AV73
Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Text: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s
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BAV73
117027/00/01/pp8
AV73
Js SMD MARKING CODE SOT23
sot23 package marking AV
smd DIODE code marking kA
SMD IC marking 632
lm 9805
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