EM 513 DIODE Search Results

em 518 diode

Abstract: em 513 diode diode em 513 diode 1600 rectifier
Contextual Info: EM 513, EM 516, EM 518 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A

em 518 diode

Abstract: em 513 diode diode em 513 diode 513 diode 518 EM518
Contextual Info: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

Contextual Info: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

diode em 513

Abstract: em 518 diode
Contextual Info: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

SMD DIODE 513

Contextual Info: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V

IN 4004 diodes

Abstract: IN4007 IN 5408 IN 4007 IN4004 IN4003 IN-4001 by 228 v IN5402 IN4001
Contextual Info: h LGSAGrlBB RECTIFIER DIODES Mains frequency diodes Type us Case JEDEC 1.0 <5.0 DO-15 If a v If s m (A) (A) VF (V) IN 4001 IN 4002 IN 4003 IN 4004 IN 4005 IN 4006 IN 4007 BY 133 EM 513 EM 516 50 100 200 400 600 800 1000 1300 1600 1800 1.1 50 <1.2 1.0 50

keyboard to DTMF

Abstract: "tone generator" PCD3315P PCD3315T S028 two Tone generator dtmf
Contextual Info: Philips Sem iconductors ^ bb53^EM □ 0 7 cì]i51 Repertory pulse dialler with redial ' NAPC/PHILIPS SEMICOND flTb WSIC3 O bjective specification PCD3315/512; PCD3315/513 b3E D — FEATURES ^ • • DTMF tone/pause 70/70 or 100/100 ms PCD3315/512 • Redial

FCD836

Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 C o u p le d C h a ra c te ris tic s M ax R a ting s @ T * = 25°C T ra n s is to r D e vice No. O u tp u t PD •c mW mA v CEO V M in C u rre n t T ra n s fe r Ratio Diode Vf? V 'f mA v iSO kV ic ^ F % @>F mA @ Vc e V FCD830D<2> Trans 250 25 30 3.0 60

FCD836

Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Device No. Output PD mW Transistor •c v CEO mA V Diode Vf? V 'f mA v iSO kV Min Current Transfer Ratio ic ^ F @>F @V c e % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30

FCD836

Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Transistor Device No. Output PD •c v CEO mW mA V Min Current Transfer Ratio Diode Vf? V 'f v iSO ic ^ F @>F @ Vc e mA kV % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30

mst 702 lf

Abstract: OLD232 INFRARED DIODES OLD232-2 light emitting diode general 910nm
Contextual Info: OKI electronic components OLP232-2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232-2 is a high-output GaAIAs infrared light em ission m icro-diode sealed w ith a glass lens in a highly reliable metal can on a TO-46 type stem . Its light em ission w a v e peaks at 910 nm.

FCD836

Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Transistor PD Device No. Output mW •c v CEO mA V Min Current Transfer Ratio Diode Vf? V 'f v iSO ic ^ F @>F @ Vc e mA kV % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30

Contextual Info: EM513 thru EM518 Pb Free Plating Product Pb EM513 thru EM518 1.0 Ampere DO-41 Package High Voltage Silicon Diode DO-41 Unit: inch mm Features • Low leakage • Low forward voltage drop • High current capability .034(.86) .028(.71) 1.0(25.4)MIN. Low cost

Contextual Info: O K I electronic OLD232-2 components GaAIAs Infrared Light Emitting Diode G EN ERAL DESCRIPTION The OLD232-2 is a high-output GaAIAs infrared light emission micro-diode sealed with a glass lens in a highly reliable metal can on a TO-46 type stem . Its light emission wave peaks at 910 nm.

DIODE RK 69

Abstract: BA rx transistor 111-BA ba rx varistor 741 CD 741 741 CN abb combiflex rtxe em 513 diode
Contextual Info: RTXE Component blocks COMBIFLEX 1MRK 513 019-BEN Page 1 Issued: September 2004 Revision: A Data subject to change without notice SE820256 Features • Requires no extra space. • For use in protection and control systems • To be mounted at the rear of the terminal

am29701

Abstract: AM27S06 AM27S07 AM27S06ADC AM27S06ADM AM27S06AFM AM27S06APC AM27S07ADC AM27S07ADM AM27S07AFM
Contextual Info: Am27S06 • Am27S07 Non-Inverting Schottky 64-Bit Random Access Memories D IS T IN C T IV E C H A R A C TER IS TIC S F U N C T IO N A L DESCRIPTIO N • • • • The A m 2 7 S 0 6 and Am 27S 07 are 6 4 -b it R A M s b u ilt using S c h o ttk y diode clam ped transistors in c o n ju n c tio n w ith in ternal EC L c irc u itry

20N60C3DR

Contextual Info: X HGTG20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as

Contextual Info: > « fc ç ô M Preliminary Specification m a n A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V 2.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, M ultilayer Metalization with a Diffusion

PMD 1000

Abstract: PMD19D100
Contextual Info: S E H T EC H CORP 5ÔE D • filB'ïlB'i Q Q 0 3 EÔ 0 0Tb « S E T 300 WATT 50 AM P CONTINUOUS, 100 AM P PEAK ABSOLUTE MAXIMUM RATINGS SYM BO L PARAM ETER M AXIM U M UNITS Vdc O Collector Emitter Voltage PM D18D, PM 019 D 80 PMD18D, PMD19D100 f 80 100 Collector Base Voltage

BD 650

Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Contextual Info: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

ABB racif

Abstract: 004-BEN 111-BA RK 723 007 capacitor trip unit 1MRK 514 001-BEN abb combiflex combiflex varistor 741 c32 circuit breaker
Contextual Info: Relay accessories and components COMBIFLEX 1MRK 513 004-BEN Page 1 Issued July 1998 Changed since June 1997 Data subject to change without notice SE 82 02 64 Features (SE 82 02 94) • Modular size or component block • For use in protection and control systems

SDL-5311-G

Abstract: SDL5311G1 SDL-5301 SDL-5311-G1 SDL-5301-G1 SDL Laser diode SDL5301G1 diode em 513 sdl diode laser SDL-5300
Contextual Info: -ÿ L 5 I »¡¡•■I & conn S E R I E n m S LOW COST 100/50mWCW SINGLE MODE GaAIAs LASER DIODES Key Features High power in a diffraction limited, single spatial mode beam is provided by the low Diffraction Limited Beam TEM00 Single Transverse Mode cost SDL-5300 series laser diodes. The index

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG75N1AS1 HIGH P O W E R S W I T C H I N G APP L I C A T I O N S . Unit in m m . H i g h Input Impe d a n c e 5 3± 0.5 . High S p e e d : tf= 0. 7fis Max. ( l £ = 75A) . Low Saturation Voltage : V ^ e ( s a t ) = 5 .O V ( M a x . )

tlp721gb

Abstract: tlp721 MARKING TLP721F
Contextual Info: TLP721 GaAs IRED & PHOTO-TRANSISTOR T L P 7 2 1 O FFIC E M A C H IN E . H O U S E H O L D USE E Q U IP M E N T . S O L ID ST A T E R ELA Y. S W IT C H IN G P O W E R SUPPLY. The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic