EM- 102 MOTOR Search Results

MC10H102

Abstract: MC10H105 ECL10KH
Contextual Info: E C L 10KH High-Speed Em itter-Coupled Logic Fam ily M C 10H 102/Q uad 2-Inp ut NOR Gate M C 10H 105/T rip le 2 -3 -2 Input O R/N O R Gate Ordering Inform ation Features/B enefits • Propagation delay, 1 ns typical PART NUMBER • Power dissipation 25 mW/gate

SKM 300 GA 102 D

Abstract: si 13003 br hc 13003 ml 13003 skm300ga122d semikron diode 200a DDD3717 DDG371B GA102 SKM 300 CIRCUIT
Contextual Info: 013bb71 □□□3710 Iflfl * S E K G S1E D S EM IK R D N SEPIIKRON INC Absolute Maximum Ratings Symbol Values 102 D Conditions1> 1000 1200 1000 1200 300/200 600/400 ±20 1750 -5 5 . . .+150 2 500 Class F 55/150/56 VcES Rge = 20 k iî VCGR Ic Tease = 2 5 / 8 5 ° C

motors

Abstract: EM3030
Contextual Info: 18.01.2011 16:34 Seite 135 Informationen Antriebstechnik_2011_01_18_Finale_DE_:Vorlage VarioDrive C ECI-Motor 144 BG-Motor Getriebemotoren BCI-Motor 140 AC-Motoren Kondensatormotoren Beschreibung 137 135 Vertretungen Spaltpolmotoren VARIODRIVE Compact VARIODRIVE

EM- 102 motor

Contextual Info: 27.05.2011 10:40 Seite 135 Information Antriebstechnik_2011_05_27_Finale_EN_:Vorlage VarioDrive C ECI motor 144 BG motor Gear motors BCI motor 140 AC motors Capacitor motors Specifications 137 135 Representatives Shaded-pole motors VARIODRIVE Compact VARIODRIVE

un224

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0224 Silicon PNP epitaxial planar type (4 elements) Silicon NPN epitaxial planar type (4 elements) Unit: mm For motor drive 0.2+0.1 –0.0 0.4±0.1 M Di ain sc te

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 1 0 2 + 0.3 i_ i A 1I d i \ 8 ' { n —• L i

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE Q M 100TX1-H APPLICATION Inverters, Servo drives, DC motor controllers, CVCF, NC equipment, Welders OUTLINE DRAW ING & C IRCUIT DIAG RAM D im ensions in mm Feb. 1999 ♦ MITSUBISHI

Contextual Info: MITSUBISHI IGBT MODULES CM150DY-12H HIGH POWER SWITCHING USE FLAT BASE, INSULATED TYPE APPLICATION AC & DC motor controls, General purpose inverters, UPS, CVCF, Welders, Servo controls, NC, Robotics, Cutting tools, Induction heating. A MITSUBISHI ELECTRIC

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM D im ensions in mm Feb. 1999 A MITSUBISHI ELECTRIC

teg 105 kpa

Abstract: mpx4101
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPX4101 SERIES In teg rated Silicon Pressure Sensor M anifold Absolute Pressure Sensor O n-Chip Signal Conditioned, Tem perature Com pensated and C alibrated INTEGRATED PRESSURE SENSOR 15 to 102 kPa 2.18 to 14.8 psi

Motors

Abstract: M2E 068-BF07-17 M2E 068-DF
Contextual Info: Technology Shaded Pole Motors VARIODRIVE EM 21 Rated speed Rated current Rated torque Mass Hz min-1 mA Ncm kg 6.2 230 50 2100 60 0.28 0.20 8 31 24 1 9.5 230 50 2200 90 0.46 0.25 12 35 32 2 1.5 12.0 230 50 2300 100 0.7 0.32 18 41 38 3 2.0 13.5 230 50 2350 120

circuit motor forward reverse control

Abstract: Matsushita Relay Technical Information Power MOSFETs Application Notes dc motor forward reverse control "Power MOSFET" Gate Drive Characteristics Japanese Transistor Data Book SC-63 POWER MOSFET Rise Time power relay N-channel mosfet
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3277 Silicon N-channel power MOSFET Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.5±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator

BCY59IX

Abstract: bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii
Contextual Info: MOTORCLA SC XSTRS/R IE E D I F b3b?2S4 00flt.4bfc, T T-M-Äl BCY58 -VII, -Vili, -IX, -X BCY59-VII, -Vili, -IX, -X M A X IM U M R A T IN G S Sym bol BCY 58 BCY 59 Collector-Emitter Voltage VC E O 32 45 Vdc Collector-Emitter Voltage R B E = 10 O hm s VcES

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM75DY-12H APPLICATION AC & DC motor controls, General purpose inverters, UPS, CVCF, Welders, Servo controls, NC, Robotics, Cutting tools, Induction heating. MITSUBISHI ELECTRIC

MC14046 application

Abstract: DIODE 2FL 20U mc14046 2FL 20U u 107 MC74HC4046A MOTOROLA MC74HC4046A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HC4046A P h a se -Lo ck e d Loop High-Performance Silicon-Gate CMOS 3 The MC574HC4046A is similar in function to the MC14046 Metal gate CMOS device. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.

Contextual Info: MITSUBISHI IGBT MODULES CM100DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

MRF544

Contextual Info: M OT OR OL A SC XSTRS/R F 4bE D b3h7ES4 GQTMTMM fl « f l O T b MOTOROLA • I SEMICONDUCTOR I TECHNICAL DATA M R F544 M RFC 544 The RF Line NPN Silicon H ig h Frequency T ra n sisto rs |q = 4 0 0 m A . . . d e s ig n e d f o r h ig h - fr e q u e n c y a n d m e d iu m a n d h ig h r e s o lu tio n c o lo r v id e o

c 458 c transistor

Abstract: transistor UIE
Contextual Info: r z 7 S C S -T H O M S O N ^ 7# G FAST NPN SWITCHING TRANSISTOR • VERY LOW SATURATION VOLTAGE ■ FAST TURN-OFF AND TURN-ON DESCRIPTION High speed transistor suited for low voltage applica­ tions. High frequency and efficiency converters switching regulators motor control.

Contextual Info: MITSUBISHI IGBT MODULES CM75DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Tc Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

WY transistor

Abstract: wy 84 MCM67Q709A MCM67Q909 MCM69D536 MCM69D618
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MCM69D536/D SEMICONDUCTOR TECHNICAL DATA MCM69D536 Freescale Semiconductor, Inc. 32K x 36 Bit Synchronous Dual I/O, Dual Address SRAM The MCM69D536 is a 1M–bit static random access memory, organized as 32K

Contextual Info: MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

Contextual Info: MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

ax16 diode

Abstract: MCM63D736A
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM63D736A/D SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. 128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM MCM63D736A The MCM63D736A is a 4M–bit static random access memory, organized as

TRW53602

Abstract: 1826s12 TRW53102 53602 PE 1938 TRW53202
Contextual Info: M OTOROLA SC XSTRS/R F 15E 0 | b3t,72S4 00flfi4GS ü I MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA T R W 53102 Se rie s The RF Line M icrowave Linear Power Transistors . . . d e sig n e d p rim arily fo r w ide b and , large -signal output an d driver am plifier sta g e s in