Untitled
Abstract: No abstract text available
Text: hlE D • 17313bS D D l^ lH 772 ■ B U B Or, Call Customer S em e al 1-800-546-6132 USA Only BURR-BROIilN CORP E r r - b r o w IS0113 n E 3 B B CO 1— y— o CO Low-Cost, High-Voltage, Internally Powered OUTPUT ISOLATION AMPLIFIER (/) H O 3 Q FEATURES
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17313bS
IS0113
IS0113
PWS750-1
IS0113s.
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MRF654
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF654 The R F Line 15 W 470 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r 12.5 V o lt UHF large-signal a m p lifie r app licatio n s in in d u stria l and co m m ercia l FM e q u ip m e n t ope ra tin g to 512 MHz.
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MRF654
MRF654
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MJ8503
Abstract: MJ8502 MJ8504 J8503
Text: MOTOROLA SC 1EE 0 § b3fc.72S4 O O f l i m ? ^ | XSTRS/R F MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s Data. S h e e t S .0 A M P ER E N P N SILIC O N PO W ER T R A N S IS T O R S SW ITCH M O D E S ER IES NPN S ILICO N POW ER T R A N SIS T O R S
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MJ8502
MJ8503
Time-25Â
YI45M.
T0-204AA
MJ8504
J8503
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Motorola transistors - bc548
Abstract: BC547 MOTOROLA BC547 BC548 BC546A BC546 bc547 collector base emitter bc546 motorola BC548A BC 547 data base
Text: BC546, A, B BC547, A, B, C BC548, A, B, C M A X I M U M R A T IN G S S ym b o l R a tin g 8C BC BC 5 4 6 547 54 8 U n it VcEO 65 Collector-Base Voltage VcBO 80 Em itter-Base Voltage vebo 6.0 Vdc C ollector Current - Continuous ic 100 mAdc Total Device D issipation @ T a = 25°C
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BC546,
BC547,
BC548,
O-226AA)
BC546
Motorola transistors - bc548
BC547 MOTOROLA
BC547
BC548
BC546A
bc547 collector base emitter
bc546 motorola
BC548A
BC 547 data base
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J4032
Abstract: J4033 MOTOROLA MJ4035 J4031 J4030 9BSC MJ4033
Text: I>F| b3L.725M OOfiGTDD 3 MOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC CX S TR S /R F 96D 8 09 00 T-J3~?3 PNP MOTOROLA MJ4030 MJ4031 MJ4032 SEMICONDUCTOR TECHNICAL DATA MJ4033 MJ4034 MJ4035 16 A M P E R E M ED IUM -POW ER C O M P L E M E N T A R Y S IL IC O N T R A N S IS T O R S
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MJ4030
MJ4031
MJ4032
MJ4033
MJ4034
MJ4035
J4032
J4033
MOTOROLA MJ4035
J4031
J4030
9BSC
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transistor j411
Abstract: MJ411 J410 mj411 transistor
Text: MOTOROLA SC XSTRS/R F H E D | b3b73S>. D O i l - lb ? 0 | / -/ J V J MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O L T A G E NPN SILICON T R AN SISTO R S 5 AM PERE . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.
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b3b73S>
transistor j411
MJ411
J410
mj411 transistor
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photodyne 88xla
Abstract: MFOE1200
Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MFOE1200 Fiber Optics Infrared LED . d esig n ed fo r fib e r o p tics a p p lica tio n s re q u irin g h ig h p o w e r and fa s t response tim e . HERMETIC FAMILY FIBER OPTICS INFRARED LED Fast R esponse — > 7 0 M Hz B a n dw idth
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MFOE1200
F086600380
10A-01
88XLA
photodyne 88xla
MFOE1200
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EM- 546 motor
Abstract: EM- 546 stepper motor EM- 534 motor stepper motor em 95 stepper motor em em 400 stepper 0/EM- 534 motor em+483+stepper EM 546 stepper
Text: 1A H-bridge Stepper Motor Driver Features D escription The CS-3717A controls and drives one phase of a bipolar stepper motor with chopper control of the phase current. Current levels may be selected in three steps by means of two logic inputs which select one
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CS-3717A
CS3717A
CS-3717AN16
EM- 546 motor
EM- 546 stepper motor
EM- 534 motor
stepper motor em 95
stepper motor em
em 400 stepper
0/EM- 534 motor
em+483+stepper
EM 546 stepper
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MJ340
Abstract: EM- 546 motor MJ3042
Text: MOTORCLA SC 12E D I b3fci7254 QG0MC17,1 7 | XSTRS/R F r-33^ 9 MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARUNGTON 10 AMPERES POWER TRANSISTORS NPN SILICON HIGH VOLTAGE SILICON POWER DARUNGTONS . . . developed for line operated amplifier, series pass and switching
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b3fci7254
MJ3041
MJ3402
MJ3041,
MJ3042
MJ340
EM- 546 motor
MJ3042
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Motorola TE 2556
Abstract: MRF323
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF323 The RF Line 20 W - 4 0 0 M H z RF POWER TRANSISTO R NPN SILICO N RF POWER TRANSISTOR N PN S IL IC O N . . . d e s ig n e d p r im a r ily f o r w id e b a n d la rg e -sig n a l d r iv e r a n d p r e d r iv e r
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MRF323
Motorola TE 2556
MRF323
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MOTOROLA MJ4035
Abstract: MJ4032 MJ4030 MOTOROLA MJ4035 MJ4032 MOTOROLA TRANSISTOR BC 187 MJ4033 nd 043 transistor J4031 MJ4030
Text: MOTOROLA SC Í X S T R S / R F> 6367254 MOTOROLA SC Tb CXSTRS/R F D eT | t.3L.72SM OOfiGTDO 3 f 96D 8 0 9 0 0 — - r T - J 3 - J 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN MJ4030 MJ4031 MJ4032 MJ4033 MJ4034 MJ4035 16 AMPERE MEDIUM-POWER C O M PLEM EN TA RY
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MJ4030
J4031
MJ4032
MJ4033
MJ4034
MJ4035
MJ4033
MJ4031
MOTOROLA MJ4035
MJ4032
MJ4030 MOTOROLA
MJ4035
MJ4032 MOTOROLA
TRANSISTOR BC 187
nd 043 transistor
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2N3422
Abstract: 2N3442 2n4347 2N4327 C0440
Text: MOTOROLA SC XSTRS/R F 1EE D | b3b72SM G0â44b0 MOTOROLA r - 3 3 -/ 3 T | 2N3442 2N4347 SEMICONDUCTOR TECHNICAL DATA 5.0 AND 10 AMPERE POWER TRANSISTORS NPN SILICON HIGH-POWER INDUSTRIAL TRANSISTORS 1 2 0 ,1 4 0 V O L T S 1 0 0 ,1 1 7 W A T T S NPN silicon power transistors designed for applications in
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b3b72SM
2N3442
2N4347
2N4347
2N3442
2N3422
2N4327
C0440
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 4fc>E L>3L,?254 □ □ cî 4 0 ô c] MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 20 W - 175 MHz RF POWER T R A N SIST O R NPN SILICO N NPN S IL IC O N RF POWER T R A N SIST O R designed prim arily fo r wideband large signal am plifier stages in
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2N5683
Abstract: PNP 2N5684 2N5685 TQ-204M 419AR 2n5684 motorola 2N5683 motorola
Text: MOTOROLA SC 1 EE D I XSTRS/R F I t.3b?254 Q0ÖMS57 3 r-33-J3 r - 3 3 " / ^ PNP MOTOROLA 2N5683, 2N56S4 SEMICONDUCTOR NPN TECHNICAL DATA 2N5685, 2N5686 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS 60 -8 0 V O LT S
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r-33-J3
2N5683,
2N56S4
2N5685,
2N5686
2N5683
PNP 2N5684
2N5685
TQ-204M
419AR
2n5684 motorola
2N5683 motorola
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THT bsc 25
Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
Text: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS
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BUT15
THT bsc 25
but15
BM 1313 diode
2SC1020
NT 407 F TRANSISTOR
transistor 3405 npn
SV0200
M70 IBM
sm 0038
3408 diode
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Motorola 2N6080
Abstract: 2N6080 motorola 18310
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N6080 The RF Line 4.0 W - 175 MHz RF POWER T R A N SIST O R NPN SILIC O N RF POWER T R A N SIST O R NPN SILICON . . . designed for 12.5 V o lt V H F large-signal power amplifier applica tions required in military and industrial equipment operating to
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2N6080
Motorola 2N6080
2N6080
motorola 18310
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sem 2106
Abstract: bux13
Text: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.
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BUX13
AN415A)
sem 2106
bux13
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EM- 546 motor
Abstract: No abstract text available
Text: HIGH-CURRENT HALF-BRIDGE M OTOR DRIVER Designed for use as a general-purpose motor driver, the UDN and UDQ2943Z half-bridge drivers combine high-current sink and source drivers with logic stages, level shifting, diode transient protection, and a voltage regulator for single-supply operation. Capable of operating
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UDQ2943Z
WP-024
EP-053
EP-055
05D433A
EM- 546 motor
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MCM6208P25
Abstract: MXM pinout MXM pin assignment
Text: MO TO R O L A SC C N E M O R Y / A S I C MOTOROLA 51E D • b 3 b 7 2 5 1 0 Ü Ô 3 73 S TTb IMO T3 m SEMICONDUCTOR ■ TECHNICAL DATA MCM6208 64K x 4 Bit Fast Static RAM The MCM6208 is fabricated using Motorola’s high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or tim
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MCM6208
300-mil
Numbers--MCM6208P15
MCM6208P20
MCM6208P25
MCM6208J15
MCM6208J20
MCM6208J25
MXM pinout
MXM pin assignment
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transistor 335
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 25 W P E P - 3 0 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTORS .d esigne d primarily for applications as a high-power linear amplifier from 2.0 to 75 MHz. • Specified 28 Volt. 30 M H z Characteristics —
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MRF401
transistor 335
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R 4bE D F b3b?2S4 o o m i n 7 " F 3 3 -C Í7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6080 The RF Line 4.0 W - 175 MHz R F POW ER T R A N S IS T O R N P N S IL IC O N R F P O W E R T R A N S IS T O R NPN SILICON designed fo r 12.5 V o lt V H F large-signal pow er a m plifie r a pplica
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2N6080
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MTD3N08L
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 14E 0 I t3fci7254 DOTDMll S | MOTOROLA Order this data sheet by MTD3N08L/D • p w ig ap w jj. E SEMICONDUCTOR u w T i. I-. - 3 7 - 0 ' TECHNICAL DATA MTD3IM08L Designer's Data Sheet P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode
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t3fci7254
MTD3N08L/D
MTD3IM08L
MTD3N08L
MTD3N08L
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BUT14
Abstract: SAF 1092 2sc 3402 transistor HN 554 transistor 100-C 3399 transistor motorola darlington power transistor TRANSISTOR 2SC 635
Text: MOTOROLA SC XSTRS/R F la E D | 33t3755 M OOflMaM1! fa | MOTOROLA S E M IC O N D U C T O R BUT14 TECHNICAL DATA 25 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 850 VOLTS
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33t3755M
BUT14
BUT14
SAF 1092
2sc 3402 transistor
HN 554 transistor
100-C
3399 transistor
motorola darlington power transistor
TRANSISTOR 2SC 635
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CM2025
Abstract: w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440
Text: MOTOROLA SC XSTRS/R F 15E D I b3b?a54 G O û lflâ B 5 I 7 ^ 3 3 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA NPN SILICON POWER METAL TRANSISTOR . designed for high speed, high current, high power applications. NPN SILICON POWER METAL TRANSISTOR 20 A M P E R E S
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AN415A)
CM2025
w65 transistor
npn, transistor, sc 109 b
T3D 34
BUV11N
transistor 3-440
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