EMIC Search Results

Si9959

Abstract: SI9910 AN90 siliconix
Contextual Info: SA Member S ioflthei cT o nGroupi x AN90-5 emic Low-Voltage Motor Drive Designs Using N-Channel Dual MOSFETs in Surface-Mount Packages Jim H am den Two basic M O SFET configurations are used in low-voltage m otor drives — the n-channel half-bridge and the p- and n-channel com plem entary half-bridge. T he

C1429-2

Abstract: smd transistor ISS
Contextual Info: T EMIC BUD725D S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features Monolithic integrated C-E-free-wheel diode • Very low switching losses • • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology

SMP30N10

Abstract: P N-Channel D-S MOSFET
Contextual Info: ^ EMIC SMP30N10 Sem i co n d u c t or s N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) I d (A) r DS(on) ( ^ ) 0.060 100 30 D O TO-220AB o .J l DRAIN connected to TAB o GD S s Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

Contextual Info: ^ EMIC U2891B-B S e m i c o n d u c t o r s 2.5-GHz Quadrature Up-Converter Description The U2891B-B is a silicon monolithic integrated circuit, manufactored using EMIC emiconductors’ advanced UHF process. This integrated circuit consists of a 500-MHz I/Q

1N48 diode

Abstract: diode in34a IN34A DIODE 1N54 1N34 DIODE diode 1n34 1N34 1N48 1N38A 1Ns4
Contextual Info: CRIMSON S EMICONDUCTOR INC ' TT 2514096 CRIMSON EMICONDUCTOR 99 D 0 0 3 4 9 D » e | 2514EHL. □ 0 0 0 34 e] □ INC 7"' O / - o 7 t GERMANIUM DIODE TYPE PEAK REVERSE V O LTAG E AVERAGE F.ORW ARD CURRENT M IN IM U M FO R W A R D CURRENT A T 1 VO LT M A X IM U M

Contextual Info: QS74FCT163373 sa ^ High Speed CMOS 3.3V ITY QS74FCT163373 16-Bit Transparent Latches S emiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Pin and function compatible with T.l. Widebus and IDT Double-Density™ families • CMOS power levels: <1 |j.W typical standby

NA51W

Abstract: NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322
Contextual Info: NB311,312,313 NPN , NB321,3 2 2 ,323(PNP) NATL SEUICOND {DISCRETE} 6501130 NATL ifl EMICOND, (DISCRETE) 28C National emiconductor r - 35601 n - 2 , } 3 ^ 0 - 7 NB311, 312, 313 (NPN) * , NB321, 3 2 2,3 N P ) 1,5ArnP com plem entary pow er drivers 2 ,3 23(P

Contextual Info: 60 Amp High Voltage SCHOTTKY BARRIER RECTIFIERS D a ta Sheet emiconductor Mechanical Dimensions Description .050 Typ Features • HIGH CURRENT CAPABILITY WITH LOW Vr ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS ■ MEETS UL SPECIFICATION 94V-0

Contextual Info: Data Sheet 16 Amp SCHOTTKY BARRIER RECTIFIERS emiconductor i § Mechanical Dimensions Description JEDEC T0-220AC .150 A-. I i .350 .240 i— H - .200 .390 {4—» .107 Features • HIGH CURRENT CAPABILITY WITH LOW V r ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION

Contextual Info: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM General Description The M M 74H C 245A 3-STATE bidirectional buffer utilizes advanced silicon-gate C M O S technology, and is intended for tw o-w ay asynchronous com m unication between data buses. It has high drive current outputs w hich enable high

Contextual Info: A I R C H I L D “ ay. 19 ,8 . 1 R e v is e d A u g u s t 1 9 9 9 EMICONDUCTGRTM 74F381 4-Bit Arithmetic Logic Unit General Description Features T h e 7 4F 381 p e rfo rm s th re e a rith m e tic a n d th re e lo g ic o p e r­ • L o w in p u t lo a d in g m in im iz e s d riv e re q u ire m e n ts

Contextual Info: Revised June 1999 EMICONDUCTGRTM 74LVT162244 • 74LVTH162244 Low Voltage 16-Bit Buffer/Line Driver with 3-STATE Outputs and 25Q Series Resistors in the Outputs technology to achieve high speed operation sim ilar to 5V A B T w hile m aintaining a low pow er dissipation.

Contextual Info: pRevised ebm7,1 ?9l1999 o July EMICONDUCTGRTM 74LVXC3245 8-Bit Dual Supply Configurable Voltage Interface Transceiver with 3-STATE Outputs General Description Features The LVXC3245 is a 24-pin dual-supply, 8-bit configurable voltage interface transceiver suited for PCMCIA and other

Contextual Info: A I R C H I L D p PriM9H8!! i QQQ Revised A ugust 1999 EMICONDUCTGRTM 74F537 1-of-10 Decoder with 3-STATE Outputs Two input enables, active HIGH E2 and active LO W E-|, are General Description The 74F537 is one-of-ten decoder/dem ultiplexer with four active HIGH BCD inputs and ten m utually exclusive o ut­

function of IC CD4538

Abstract: CD4538
Contextual Info: February 1984 Revised February 1999 EMICONDUCTGRTM General Description The MM74HC4538 high speed monostable multivibrator one shots is implemented in advanced silicon-gate CMOS technology. They feature speeds comparable to low power Schottky TTL circuitry while retaining the low power

Contextual Info: S e p te m b e r 1 9 8 3 R e v is e d F e b ru a ry 199 9 EMICONDUCTGRTM MM74HC08 Quad 2-Input AND Gate General Description A ll in p u ts a re p ro te c te d fro m d a m a g e d u e to s ta tic d is ­ c h a rg e b y in te rn a l d io d e c la m p s to V q q a n d g ro u n d .

Contextual Info: EClamp2384K ESD/EMI Protection for Color LCD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2384K is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic equipment. This state-of-the-art device utilizes solid-state

2522p

Contextual Info: EClamp2522P USB Upstream Port Filter and TVS For EMI Filtering and ESD Protection PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2522P is an easily implemented solution for protection and termination of low speed or full speed Universal Serial Bus USB ports. Each device will

USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection

Abstract: ECLAMP2122S sot-23 marking code 352 marking code YW DIODE
Contextual Info: EClamp2122S USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection PROTECTION PRODUCTS - EMIClamp Description Features The EClamp 2122S is combination EMI filter and line termination device with integrated TVS diodes for use on USB 2.0 interfaces. This device utilizes solid-state

Contextual Info: EClamp2454P ESD/EMI Protection for Color LCD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2454P is a L-C low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic

Contextual Info: EClamp2376K ESD/EMI Protection for Color LCD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2376K is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic

Contextual Info: EClamp0504T Low Profile EClamp 4-Line ESD protection PROTECTION PRODUCTS - EMIClamp® Description Features The EClamp 0504T is designed to protect sensitive electronics from damage or latch-up due to ESD. This stateof-the-art device utilizes solid-state silicon-avalanche

ca3078

Contextual Info: blE T> • HARRIS SEniCOND SECTOR 4302271 0DMb233 752 H H A S HARRIS 8 EMICONOUCTOR March1993 Micropower Operational Amplifier Features Description • • • • • Low Standby P o w e r. AsLowAs700nW The CA3078 and CA3078A are high gain monolithic

Contextual Info: QuickSwitch Products Quau" S emiconductor , In c . q s 38oo High-Speed CMOS 10-Bit QuickSwitch with Precharged Outputs FEATURES/BENEFITS DESCRIPTION • 5Q. bidirectional switches connect inputs to outputs • Zero propagation delay • Undershoot clamp diodes on all switch