EMITTER SWITCHED BIPOLAR TRANSISTOR Search Results

EMITTER SWITCHED BIPOLAR TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini

EMITTER SWITCHED BIPOLAR TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
r21 diode Contextual Info: APTES45SK120CT1G Buck chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • Power factor corrector • AC and DC motor control • Switched Mode Power Supplies Features • Emitter Switched Bipolar Transistor® ESBT®	Original	APTES45SK120CT1G r21 diode	PDF
Contextual Info: APTES45SK120CT1G Buck chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • Power factor corrector • AC and DC motor control • Switched Mode Power Supplies Features • Emitter Switched Bipolar Transistor® ESBT®	Original	APTES45SK120CT1G	PDF
Contextual Info: APTES45DA120CT1G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage	Original	APTES45DA120CT1G	PDF
r21 diode Abstract: ESBT vrrm 400v if 20A ultra fast recovery diode #R3A Contextual Info: APTES45DA120CT1G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage	Original	APTES45DA120CT1G r21 diode ESBT vrrm 400v if 20A ultra fast recovery diode #R3A	PDF
power supply schematic diagram Abstract: 3 phase inverter schematic diagram SMPS SCHEMATIC DIAGRAM PFC smps design schematic diagram solar inverter smps Power Supply Schematic Diagram hv 1000 inverter schematic diagram 6 pin smps IC ESBT smps 450 W Contextual Info: ESBT Emitter Switched Bipolar Transistors July 2007 www.st.com/esbt The ESBT product family Based on an emitter switching concept, the new ESBT family of high-performance power actuators provides a simple, cost-effective solution for applications requiring	Original	O220FP-4L O247-4L SGESBT0707 power supply schematic diagram 3 phase inverter schematic diagram SMPS SCHEMATIC DIAGRAM PFC smps design schematic diagram solar inverter smps Power Supply Schematic Diagram hv 1000 inverter schematic diagram 6 pin smps IC ESBT smps 450 W	PDF
transformer egston Abstract: 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical Contextual Info: AN2844 Application note 15 W wide range SMPS for metering based on ESBT STC03DE220HV and L6565 PWM controller 1 Introduction This document describes a 15-W flyback switched mode power supply SMPS application that uses an emitter-switched bipolar transistor (ESBT™) switch (STC03DE220HV) and	Original	AN2844 STC03DE220HV L6565 STC03DE220HV) STEVAL-ISA057V1 transformer egston 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical	PDF
ignition driver Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies	Original	FJAFS1510A FJAFS1510A ignition driver fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps	PDF
Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies	Original	FJAFS1510A FJAFS1510A	PDF
fairchild power bjt Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver	Original	FJP2160D fairchild power bjt fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor	PDF
HV cascode smps Abstract: STC05DE120HV JESD97 flyback smps c05de Contextual Info: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance	Original	STC05DE120HV 150kHz 2002/93/EC O247-4L STC05DE120HV HV cascode smps JESD97 flyback smps c05de	PDF
APTES80DA120C3G Contextual Info: APTES80DA120C3G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 80A @ TC = 80°C Application • Power factor corrector Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage - High voltage rating - Ultra fast switching speed	Original	APTES80DA120C3G APTES80DA120C3G	PDF
Contextual Info: APTES80DA120C3G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 80A @ TC = 80°C Application • Power factor corrector Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage - High voltage rating - Ultra fast switching speed	Original	APTES80DA120C3G	PDF
HV cascode smps Abstract: JESD97 STC05DE120HV Contextual Info: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance	Original	STC05DE120HV 150kHz 2002/93/EC STC05DE120HV HV cascode smps JESD97	PDF
ST 358 Abstract: isotop bipolar JESD97 STE70IE120 E70IE120 Contextual Info: STE70IE120 Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 Ω Power Module Target data General features VCS ON IC RCS(ON) 1V 70A 0.014W • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance	Original	STE70IE120 STE70DE120 E70IE120 ST 358 isotop bipolar JESD97 STE70IE120 E70IE120	PDF

Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz	Original	STC06IE170HV STC06IE170HV O247-4L	PDF
Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz	Original	STC06IE170HV 2002/93/EC O247-4L STC06IE170HV	PDF
HV cascode smps Abstract: C06IE170HV JESD97 STC06IE170HV Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz	Original	STC06IE170HV O247-4L STC06IE170HV HV cascode smps C06IE170HV JESD97	PDF
Contextual Info: STC04IE170HP Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch, up to 150 kHz	Original	STC04IE170HP O247-4L STC04IE170HP	PDF
STC04IE170HV Abstract: C04IE170HV 12676 Contextual Info: STC04IE170HV Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz	Original	STC04IE170HV O247-4L STC04IE170HV C04IE170HV 12676	PDF
JESD97 Abstract: P12IE95F4 STP12IE95F4 o811 Contextual Info: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz	Original	STP12IE95F4 O220FP-4L STP12IE95F4 JESD97 P12IE95F4 o811	PDF
P12IE95F4 Abstract: STP12IE95F4 JESD97 Contextual Info: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz	Original	STP12IE95F4 O220FP-4L STP12IE95F4 P12IE95F4 JESD97	PDF
Contextual Info: STC04IE170HV Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features • VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz	Original	STC04IE170HV O247-4L STC04IE170HV	PDF
C04IE170HP Abstract: STC04IE170HP Contextual Info: STC04IE170HP Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch, up to 150 kHz	Original	STC04IE170HP O247-4L STC04IE170HP C04IE170HP	PDF
emitter switched bipolar transistor Abstract: C12IE90HV JESD97 STC12IE90HV Contextual Info: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz	Original	STC12IE90HV O247-4L STC12IE90HV emitter switched bipolar transistor C12IE90HV JESD97	PDF

EMITTER SWITCHED BIPOLAR TRANSISTOR Search Results

EMITTER SWITCHED BIPOLAR TRANSISTOR Result Highlights (5)

EMITTER SWITCHED BIPOLAR TRANSISTOR Datasheets Context Search

r21 diode

r21 diode

power supply schematic diagram

transformer egston

ignition driver

fairchild power bjt

HV cascode smps

APTES80DA120C3G

HV cascode smps

ST 358

HV cascode smps

STC04IE170HV

JESD97

P12IE95F4

C04IE170HP

emitter switched bipolar transistor