ENER Search Results

IC-524

Abstract: 74as
Contextual Info: SN 54AS881A, S N 74AS 8 8 1A ARITH M ETIC LOGIC UNITS/FUNCTION G ENERATORS D 2 6 6 1 , DECEMBER 1 9 8 2 - • Package Options Include Plastic "Small Outline" Packages, Both Plastic and Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs •

T1P121

Abstract: texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122
Contextual Info: TYPES TIP120, TIP121. TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR COM PLEM EN TARY USE WITH TIP125, TIP126, TIP127 65 W at 25°C Case Temperature • Min hpE ° f 1000 at 3 V , 3 A • 5 A Rated Collector Current • 50 mJ Reverse Energy Rating

2SC2230

Abstract: c2230a C2230
Contextual Info: SILICON NPN T R IP LE DIFFU SED T Y P E P C T P R O C E S S 2SC2230,2SC2230A HIGH VOLTAGE G ENERAL AM PLIFIER APPLICATIONS. CO LO R TV CLASS B S O U N D OUTPUT APPLICATIONS. • • High Voltage : VcEO = 180V (2SC2230A) High DC Current Gain. M A X IM U M RATINGS (Ta = 25°C)

2N5001

Abstract: TCA 875 MW-82 2N5149 2N4999
Contextual Info: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

Contextual Info: 2SA1954 TO SHIBA 2 S A 1 954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS G ENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current VCE (sat) d )= —15mV (Typ.) @ Iq = —10mA/ Iß = —0.5mA

2n6325

Abstract: 2N6323 on 5297 transistor 2N6322 2N6324 NS2N
Contextual Info: TYPES 2N6322 THRU 2N6325 N-P-N SILICON POWER TRANSISTORS TYPES 2N6322 THRU 2N6325 BULLETIN NO. DL-S 7211589, JANUARY HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS • 100-mJ Reverse-Energy Rating • 30-A Rated Continuous Collector Current

Contextual Info: TOSHIBA TENTATIVE G T 1 0 J3 1 1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd G eneration E n h anceme nt- Mode : tf= 0.30/iS M ax. H igh Speed Low S atu ratio n V oltage : V q e (s a t )= 2.7V (M ax.)

Contextual Info: TOSHIBA 2SC5376 T O SH IB A TRANSISTO R SILICON NPN EPITAXIAL TYPE 2SC5376 A U D IO FREQUENCY G ENERAL PURPOSE A M PLIFIER APPLIC ATIO NS Unit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIO NS 1.610.2 0.8 ± 0 . 1, • Low Collector Saturation Voltage : V c e sat (l) = 15mV (Typ.)

Contextual Info: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features eneral Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

SMD 0402

Contextual Info: 2381 553 2.6/MLV0402E3.3T Vishay BCcomponents SMD 0402 Multilayer Varistor FEATURES • Surface mount multilayer surge suppressor  Inherent bidirectional clamping  Excellent energy/volume ratio  Suitable for reflow soldering  Compliant to RoHS directive 2002/95/EC

12350

Abstract: PS-12350 24 volt 300 AH
Contextual Info: Rechargeable Sealed Lead-Acid Battery PS-12350 12 Volt 35 Amp. Hrs. Features: Absorbent Glass Mat AGM technology for superior performance. Valve regulated, spill-proof construction. Power/volume ration yielding unrivaled energy density. Recessed fold-down handles for safe and

STPM10

Abstract: STM8L152 an 17832 STM8L15 microcontroller schematic
Contextual Info: STEVAL-IPE012V1 Single-phase energy meter demonstration board using the STPM10 and STM8L15 Data brief Features • Accuracy: Class 1 with dynamic range 200:1 ■ Nominal voltage: 240 V ■ Nominal current : 5 A ITYP ■ Maximum current: 45 A (IMAX) ■ Operating range: 0.6 VBAT to 1.2 VBAT

SMARTRF05

Abstract: cc2541 CC2540EM SWRU297 heart rate sensor SMARTRF05 cc2540 C_1U_0402_X5R_K_6P3 CC2541EM CC2542 interface CC2540
Contextual Info: Bluetooth Low Energy CC2540 Development Kit CC2541 Evaluation Module Kit User’s Guide Document Number: SWRU301A Development Kit Part Number: CC2540DK, CC2541EMK SWRU301 TABLE OF CONTENTS 1. REFERENCES. 4

Contextual Info: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APRIL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output

Contextual Info: Panasonic P o w er F -M O S F E T s 2SK2375 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown 5X ■ A pplications • • • • • Non-contact relay

Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features eneral Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

gpsu15b-8

Abstract: ul1185 18awg diode 66a IEC320-C8
Contextual Info: GS15B 7.2~15W AC-DC Single Output Desktop series Features : Universal AC input / Full range No load power consumption <0.5W Meet energy star level IV CEC for 5 ~ 48V Meet EISA 2007 (Energy Independence and Security Act) for 5 ~ 48V 2 pole AC inlet IEC320-C8

Contextual Info: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features eneral Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

ul1185 18awg

Abstract: diode 66a GS15A-1P1J GS15A-3P1J GS15A-4P1J GS15A-6P1J GS15A-8P1J IEC320-C14
Contextual Info: GS15A 7.2~15W AC-DC Single Output Desktop series Features : Universal AC input / Full range No load power consumption <0.5W Meet energy star level IV CEC for 5 ~ 48V Meet EISA 2007 (Energy Independence and Security Act) for 5 ~ 48V 3 pole AC inlet IEC320-C14

Metal-Oxide Varistor

Abstract: VARISTOR 64 NV73D2A Metal Varistor Data Sheet SMD MARKING CODE 2A smd transistor marking 1j NV73DL2BTTE68 NV73DL2BTTE27
Contextual Info: 1733 Reader's Spreads pg1-203:document 1/27/09 4:29 PM Page 189 NV73DL multilayer type metal oxide varistor automotive EU • SMD type metal oxide varistors • Ideal for countermeasures against ESD (Conforming to IEC61000-4-2) • High maximum energy type

MLV-0603

Contextual Info: 2381 553 3.6/MLV0603E3.3T Vishay BCcomponents SMD 0603 Multilayer Varistor FEATURES • Surface mount multilayer surge suppressor  Inherent bidirectional clamping  Excellent energy/volume ratio  Suitable for reflow soldering  Compliant to RoHS directive 2002/95/EC and in

TPIC6A595NE

Abstract: tpic6a595 SLIS005B
Contextual Info: TPIC6A595 POWER LOGIC 8ĆBIT SHIFT REGISTER SLIS005B − APRIL 1993 − REVISED MAY 2005 D D D D D D D Low rDS on . . . 1 Ω Typ Output Short-Circuit Protection Avalanche Energy . . . 75 mJ Eight 350-mA DMOS Outputs 50-V Switching Capability Devices Are Cascadable

IDC7328

Contextual Info: IDC-7328 Vishay Dale High Current, Surface Mount Inductors FEATURES • • • • • High energy storage Low resistance Tape and reel packaging for automatic handling Compliant to RoHS Directive 2002/95/EC Halogen-free according to IEC 61249-2-21 definition

MVSF2N02EL

Abstract: MVSF2N02ELT1G
Contextual Info: MGSF2N02EL, MVSF2N02EL Power MOSFET 2.8 Amps, 20 Volts, N−Channel SOT−23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.