ENERG Search Results

T1P121

Abstract: texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122
Contextual Info: TYPES TIP120, TIP121. TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR COM PLEM EN TARY USE WITH TIP125, TIP126, TIP127 65 W at 25°C Case Temperature • Min hpE ° f 1000 at 3 V , 3 A • 5 A Rated Collector Current • 50 mJ Reverse Energy Rating

2N5001

Abstract: TCA 875 MW-82 2N5149 2N4999
Contextual Info: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

2n6325

Abstract: 2N6323 on 5297 transistor 2N6322 2N6324 NS2N
Contextual Info: TYPES 2N6322 THRU 2N6325 N-P-N SILICON POWER TRANSISTORS TYPES 2N6322 THRU 2N6325 BULLETIN NO. DL-S 7211589, JANUARY HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS • 100-mJ Reverse-Energy Rating • 30-A Rated Continuous Collector Current

Contextual Info: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

SMD 0402

Contextual Info: 2381 553 2.6/MLV0402E3.3T Vishay BCcomponents SMD 0402 Multilayer Varistor FEATURES • Surface mount multilayer surge suppressor  Inherent bidirectional clamping  Excellent energy/volume ratio  Suitable for reflow soldering  Compliant to RoHS directive 2002/95/EC

12350

Abstract: PS-12350 24 volt 300 AH
Contextual Info: Rechargeable Sealed Lead-Acid Battery PS-12350 12 Volt 35 Amp. Hrs. Features: Absorbent Glass Mat AGM technology for superior performance. Valve regulated, spill-proof construction. Power/volume ration yielding unrivaled energy density. Recessed fold-down handles for safe and

STPM10

Abstract: STM8L152 an 17832 STM8L15 microcontroller schematic
Contextual Info: STEVAL-IPE012V1 Single-phase energy meter demonstration board using the STPM10 and STM8L15 Data brief Features • Accuracy: Class 1 with dynamic range 200:1 ■ Nominal voltage: 240 V ■ Nominal current : 5 A ITYP ■ Maximum current: 45 A (IMAX) ■ Operating range: 0.6 VBAT to 1.2 VBAT

SMARTRF05

Abstract: cc2541 CC2540EM SWRU297 heart rate sensor SMARTRF05 cc2540 C_1U_0402_X5R_K_6P3 CC2541EM CC2542 interface CC2540
Contextual Info: Bluetooth Low Energy CC2540 Development Kit CC2541 Evaluation Module Kit User’s Guide Document Number: SWRU301A Development Kit Part Number: CC2540DK, CC2541EMK SWRU301 TABLE OF CONTENTS 1. REFERENCES. 4

Contextual Info: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APRIL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output

Contextual Info: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

Contextual Info: Panasonic P o w er F -M O S F E T s 2SK2375 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown 5X ■ A pplications • • • • • Non-contact relay

Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

gpsu15b-8

Abstract: ul1185 18awg diode 66a IEC320-C8
Contextual Info: GS15B 7.2~15W AC-DC Single Output Desktop series Features : Universal AC input / Full range No load power consumption <0.5W Meet energy star level IV CEC for 5 ~ 48V Meet EISA 2007 (Energy Independence and Security Act) for 5 ~ 48V 2 pole AC inlet IEC320-C8

Contextual Info: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Metal-Oxide Varistor

Abstract: VARISTOR 64 NV73D2A Metal Varistor Data Sheet SMD MARKING CODE 2A smd transistor marking 1j NV73DL2BTTE68 NV73DL2BTTE27
Contextual Info: 1733 Reader's Spreads pg1-203:document 1/27/09 4:29 PM Page 189 NV73DL multilayer type metal oxide varistor automotive EU • SMD type metal oxide varistors • Ideal for countermeasures against ESD (Conforming to IEC61000-4-2) • High maximum energy type

MLV-0603

Contextual Info: 2381 553 3.6/MLV0603E3.3T Vishay BCcomponents SMD 0603 Multilayer Varistor FEATURES • Surface mount multilayer surge suppressor  Inherent bidirectional clamping  Excellent energy/volume ratio  Suitable for reflow soldering  Compliant to RoHS directive 2002/95/EC and in

TPIC6A595NE

Abstract: tpic6a595 SLIS005B
Contextual Info: TPIC6A595 POWER LOGIC 8ĆBIT SHIFT REGISTER SLIS005B − APRIL 1993 − REVISED MAY 2005 D D D D D D D Low rDS on . . . 1 Ω Typ Output Short-Circuit Protection Avalanche Energy . . . 75 mJ Eight 350-mA DMOS Outputs 50-V Switching Capability Devices Are Cascadable

IDC7328

Contextual Info: IDC-7328 Vishay Dale High Current, Surface Mount Inductors FEATURES • • • • • High energy storage Low resistance Tape and reel packaging for automatic handling Compliant to RoHS Directive 2002/95/EC Halogen-free according to IEC 61249-2-21 definition

MVSF2N02EL

Abstract: MVSF2N02ELT1G
Contextual Info: MGSF2N02EL, MVSF2N02EL Power MOSFET 2.8 Amps, 20 Volts, N−Channel SOT−23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.

SMF30AG

Abstract: SMF58AG SMF33AG SMF36AG SMF48AG SMF51AG SMF58A SMF5.0AT1 SMF5.0AT1g
Contextual Info: SMF5.0AT1G Series, SZSMF5.0AT1G Series 200 W Transient Voltage Suppressor SOD-123 Flat Lead Package The SMF5.0AT1G Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low zener impedance and

2955g

Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant

Contextual Info: CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to ‹ Higher Current Rating withstand high energy in the avalanche mode and switch ‹ Lower Rds on efficiently. This new high energy device also offers a ‹ Lower Capacitances

Contextual Info: 53 Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 53 Φ SERIES FEATURES — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

Contextual Info: 32ĭ SERIES DATA SHEET METAL OXIDE VARISTOR – 32ĭ SERIES FEATURE — — — — Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.