ENERGY ABSORPTION OF DIODE Search Results

125OC

Abstract: XB01SB04A2BR diode 0.2 V 1A
Contextual Info: XB01SB04A2BR Schottky Barrier Diode 1A, 40V Type ! ! ! ! September 29, 2003 Ver. 4 ! APPLICATIONS " Rectification of compact DC/DC converter " Surge absorption caused by counter force of compact motors " Energy-saving for notebook PCs, hand-set " Protection against reverse connection of battery

125OC

Abstract: XB01SB04A2BR diode 0.2 V 1A
Contextual Info: XB01SB04A2BR Schottky Barrier Diode 1A, 40V Type ! ! ! ! September 29, 2003 Ver. 4 ! APPLICATIONS " Rectification of compact DC/DC converter " Surge absorption caused by counter force of compact motors " Energy-saving for notebook PCs, hand-set " Protection against reverse connection of battery

Contextual Info: ZV Series — Low Voltage Leaded Varistors Description The ZV Series of low voltage leaded multilayer varistors MLVs is designed to protect sensitive electronics devices operating in the low voltage region against high voltage / current surges. They offer excellent transient energy absorption due to improved energy volume

K1430

Abstract: M074
Contextual Info: ZV Series — Low Voltage Leaded Varistors Description The ZV Series of low voltage leaded multilayer varistors MLVs is designed to protect sensitive electronics devices operating in the low voltage region against high voltage / current surges. They offer excellent transient energy absorption due to improved energy volume

Contextual Info: ZV / ZVY Series — Low Voltage Leaded Varistors Description The ZV Series of low voltage leaded multilayer varistors MLVs is designed to protect sensitive electronics devices operating in the low voltage region against high voltage / current surges. They offer excellent transient energy absorption due to improved energy volume

Contextual Info: ZV / ZVY Series — Low Voltage Leaded Varistors Description The ZV Series of low voltage leaded multilayer varistors MLVs is designed to protect sensitive electronics devices operating in the low voltage region against high voltage / current surges. They offer excellent transient energy absorption due to improved energy volume

marking code BBH

Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
Contextual Info: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these

Varistor

Abstract: triac varistor varistor application mov surge surge protection energy absorption of diode varistor 4
Contextual Info: FEATURES * Wide operating voltages ranging from 5Vrms to 1000Vrms 6Vdc to 1465Vdc . * Fast response time of less than 25nS, instantly clamping the transient over voltage. * High surge current handling capability. * High energy absorption capability. * Low clamping voltages, providing better surge protection

GTA 15

Contextual Info: GASTUBE ARRESTER Gas tube arrester GTA is a surge absorber featuring low capacitance and high surge absorption energy. lt consists of a sealed tube in which inert gas is injected and electrodes which are set at fixed intervals. The simple structure and the dimensional accuracy offer high

Contextual Info: GASTUBE ARRESTER Gas tube arrester GTA is a surge absorber featuring low capacitance and high surge absorption energy. lt consists of a sealed tube in which inert gas is injected and electrodes which are set at fixed intervals. The simple structure and the dimensional accuracy offer high

Contextual Info: GASTUBE ARRESTER Gas tube arrester GTA is a surge absorber featuring low capacitance and high surge absorption energy. lt consists of a sealed tube in which inert gas is injected and electrodes which are set at fixed intervals. The simple structure and the dimensional accuracy offer high

Contextual Info: §1. Operating Principles 1.1 Operating Principles of Laser Diodes LDs , Infrared Emitting Diodes (IREDs) and Photodiodes (PDs) 1.1.1 Emitting Principles E ach electron in an atom or m olecule has a specific discrete energy level, as show n in figure 1-1. T he

shockley diode

Abstract: diode shockley shockley diode application shockley diode datasheet GA07 Sharp Semiconductor Lasers Quantum Effect Devices 121017 GA04
Contextual Info: Effect of Free-Carrier Absorption on Performance of 808 nm High-Power Laser Diodes K A Bulashevich1,2 , V F Mymrin2 , and S Yu Karpov2,3 1 2 3 Ioffe Physico-Technical Institute, RAS, St.Petersburg, 194021 Russia Soft-Impact, Ltd., P.O.Box 83, St.Petersburg, 194156 Russia

principles

Contextual Info: Section 1 Operating Principles 1.1 O p eratin g P rin cip les o f L aser Diodes LDs , Infrared Em itting Diodes (IREDs) and Photodiodes (PDs) 1.1.1 Emitting Principles Each electron in an atom or molecule has a specific discrete energy level, as shown in figure 1-1. The

Physics and Technology

Abstract: physics pn junction diode structure
Contextual Info: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors

SOD87

Abstract: SOD87 footprint Diode zener smd d8 Zener diode smd marking 18 diode snubber sod-87 Diode zener smd SOD87 zener smd marking 2x flyback snubber marking D9 zener diode
Contextual Info: Philips Semiconductors Philips Semiconductors continues to lead the way in cutting-edge package options which meet demands for ever greater performance from continually smaller housings.With the SOD87 SMD diode power package, designers now have the ultimate combination of

Sharp Semiconductor Lasers

Abstract: gaseous lasers cladding mode strip
Contextual Info: Operating Principles of Laser Diodes x x x x “LASER” IS an acronym for “Light Amplification by Stimulated Emission of Radiation. ” A laser is a device which uses one of a large number of solid, liquid, or gaseous materials to generate light and ampllfy it through the process of

K30 varistor

Abstract: varistor k30 CN2220K30G CN2220S14BAUTOE2G2 CT0603L25HSG
Contextual Info: Ceramic transient voltage suppressors Selection procedures Date: August 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

feature of ic UM 66

Abstract: wo02 Trench MOS Schottky Rectifier um 66 ic "A low barrier Schottky metal was used" 40L15CT 65PQ015 80CPT015 wo-02
Contextual Info: Increased Efficiency and Improved Reliability in “ORing” functions using Trench Schottky Technology Davide Chiola, Stephen Oliver, Marco Soldano International Rectifier, El Segundo, USA. As presented at PCIM Europe, 2002 Abstract – Presented in this paper are the characteristics of the first Trench MOS Schottky Diode released to

Contextual Info: Mid-IR Products Introduction Mid-Infrared Light Emitting Diodes and Photodiodes Light emitting diodes LEDs and Photodiodes (PDs) are semiconductor devices. LED or PD heterostructure is formed by sequential epitaxy of semiconductor layers on the surface of a crystal

VARISTOR s14 K50

Abstract: varistor s10 k50 VARISTOR K50 Siemens varistor family 4032 K50 K40 varistor Z5U Metal Oxide Varistor S20 K50 Varistor cu3225 VARISTOR s14 K40
Contextual Info: General Technical Information General technical information 1.1 Introduction Despite its many benefits, one of the few drawbacks of semiconductor technology is the vulnerability of solid-state devices to overvoltages. Even voltage pulses of very low energy can produce interference and damage, sometimes with far-reaching consequences. So, as electronics makes its

varistor s20 k250

Abstract: K250 varistor siemens K250 varistor S18K250 s18k b25k250 varistor k250 S18 Metal Varistor Siemens varistor family airbag
Contextual Info: Application and Selection 2.1 Overvoltage types and sources O vervoltages are distinguished according to where they originate. 2.1.1 Internal overvoltages Internal overvoltages are those overvoltages that originate in the actual system which is to be pro­

hOW TO READ varistor VALUE

Abstract: "Surge Arresters" pspice SIOV-B40K275 VAR0374-N varistor S20 61000-4-X B40K275 LS50 S14K150 VAR0249-A
Contextual Info: Selection Procedure 2 Selection procedure 2.1 Overvoltage types and sources Overvoltages are distinguished according to where they originate. 2.1.1 Internal overvoltages Internal overvoltages are those overvoltages that originate in the actual system which is to be protected, e. g. through

hOW TO READ varistor VALUE

Abstract: Z 151 VARISTOR B80 epcos VARISTOR B40K275 SIOV-B40K275 VAR0374-N VAR0271-J VARISTOR LS50 VAR0131-X
Contextual Info: SIOV metal oxide varistors Selection procedure Date: December 2007 Data Sheet  EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.