ENHANCE Search Results

3 phase ac sinewave phase inverter single ic

Abstract: U5J diode
Contextual Info: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One

Contextual Info: G T 1 5 J 1 0 2 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 1 0 ± 0 -3 . ¿ 3 .2 ± 0 .2 2 .7 ± 0 .2 . High Input Impedance . High Speed : t£=0.35iJs Max. . Lou Saturation Voltage : VcE(sat)"*.OV(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta«250C)

SMNS405A

Abstract: cms405 CMS408 CMS406
Contextual Info: CMS405, CMS406 4 MEGABYTE CMS407, CMS408 2 MEGABYTE DRAM MEMORY CARDS SMNS405A-JUNE1991-REVISED JANUARY 1993 * Credit Card Size 85.6 mm x 54 mm x 60-PIN MEMORY CARD (CONNECTOR VIEW 3.4 mm) Single 5-V Power Supply (±5% Tolerance) * Enhanced Page Mode Operation

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all

D945 TRANSISTOR

Abstract: d945
Contextual Info: UC1842A/3 A/4A/5 A UC2842A/3A/4A/5A UC3842A/3A/4A/5A U IM IT R O D E Current Mode PWM Controller DESCRIPTION Low Start Up Current <0.5mA Trimmed Oscillator Discharge Current Automatic Feed Forward Compensation Pulse-by-Pulse Current Limiting Enhanced Load Response Characteristics

LVC244

Contextual Info: I SN74LVC241 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS SGAS343 - MARCH 1994 DB, DW, OR PW PACKAGE TOP VIEW E P IC (Enhanced-Performance Implanted CMOS) Submicron Process Typical V q lp (Output Ground Bounce) < 0.8 V at Vc c = 3.3 V, TA = 25°C Typical V q HV (Output V qh Undershoot)

Contextual Info: SN74LVC540 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS JA N U A R Y 1993 • Space-Saving Package Option: Shrink Small-Outline Package DB Features EIAJ 0.65-mm Lead Pitch DB, DW, OR PW PACKAGE (TOP VIEW) • EPIC (Enhanced-Performance implanted CMOS) Submicron Process

TL054A1

Abstract: TL051 TL051 equivalent diode u1d 315
Contextual Info: TL05x, TL05XA, TL05xY ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS _ SLOS178 - FEBRUARY 1997 Direct Upgrades to TL07x and TL08x BiFET Operational Amplifiers Faster Slew Rate 20 V/|js Typ Without Increased Power Consumption • •

MG50H2YS1

Contextual Info: MG50H2YS1 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance : tf= 1 . 0/is Max. . High Speed trr = 0 . 5 y s ( M a x .) . Enhancement-Mode . Includes a Complete Half Bridge in one

5bti

Contextual Info: TPS7133QPW P, TPS713 3Y M IC R O P O W ER LO W -D R O P O U T LD O V O L T A G E R E G U L A T O R S SLVS101A-FEBRUARY 1 9 9 5 - REVISED AUGUST 1995 Thermally Enhanced Surface-Mount Package (PWP) PWP PACKAGE (TOP VIEW) High-Current (500-mA) LDO Regulator

Contextual Info: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •

Contextual Info: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode

Contextual Info: a d v a n c e in fo r m a 7to/vUT54ACS 191/UT54ACTS191 Radiation-Hardened Synchronous 4-Bit Up-Down Counters FEATURES • Single dow n/up count control line • Look-ahead circuitry enhances speed of cascades counters • Fully synchronous in count inodes

GT15Q101

Contextual Info: GT15Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm #3 2±0.2 MOTOR CONTROL APPLICATIONS. I5.9MAX . High Input Impedance . High Speed : tf= 0 . 5ys Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode I1AXIMUM RATINGS (Ta=25°C) SYMBOL

Contextual Info: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.

T5CD

Contextual Info: U M C U M 2661 Enhanced Programmable Communications Interface EPCI Features • Automatic serial echo mode (échoplex) ■ Local or remote maintenance loop back mode Baudrate: de to IM bps (1X clock) - de to 62.5K bps (16X clock) - de to 15.625K bps (64X clock)

GT50J102

Contextual Info: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.

CO2V

Contextual Info: SN74ALVC16600 18-BIT UNIVERSAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS JA N U A R Y 1993 Member of the Texas Instruments Widebus Family DGG OR DL PACKAGE TOP VIEW ÖEÄE [ LEAB [ A1 [ GND [ A2 [ A3 [ EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process

Contextual Info: SN74LVC16543 16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS 3CAS317A- NOVEMBER 1993 - REVISED OCTOBER 199S | • Member of the Texas Instruments Wldobua Family • EP/C™ Enhanced-Performance Implanted CMOS Submicron Process • Typical V q l p (Output Ground Bounce)

Contextual Info: SN74LVC841 10-BIT BUS-INTERFACE D-TYPE LATCH WITH 3-STATE OUTPUTS M ARCH 1993 OB, DW, OR PW PACKAGE TOP VIEW • Space-Saving Package Option: Shrink Small-Outline Package (DB) Features EIAJ 0.65-mm Lead Pitch • EPIC (Enhanced-Performance Implanted

GT60M101

Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0

Contextual Info: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)

Contextual Info: I SN74LVC158 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTOR/MULTIPLEXER SCAS342 - MARCH 1994 D, DB, OR PW PACKAGE TOP VIEW EPIC (Enhanced-Performance Implanted CMOS) Submicron Process Typical V q l p (Output Ground Bounce) < 0.8 V at Vc c = 3.3 V, TA = 25°C

Contextual Info: TO SH IBA GT10J301 GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1 5 .9 M A X m The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max.