Untitled
Abstract: No abstract text available
Text: SN65472-EP www.ti.com SLRS061 – SEPTEMBER 2013 DUAL PERIPHERAL DRIVER Check for Samples: SN65472-EP FEATURES 1 • • • • • • • Characterized for Use up to 300 mA High-Voltage Outputs No Output Latch-Up at 55 V After Conducting 300 mA Medium-Speed Switching
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SN65472-EP
SLRS061
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Untitled
Abstract: No abstract text available
Text: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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LM2902-EP
SGLS335A
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LM2902KV-EP
Abstract: LM2902 15-V 2902KAE LM2902KAVMDREP
Text: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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LM2902-EP
SGLS335A
LM2902KV-EP
LM2902
15-V
2902KAE
LM2902KAVMDREP
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Untitled
Abstract: No abstract text available
Text: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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LM2902-EP
SGLS335A
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Untitled
Abstract: No abstract text available
Text: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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LM2902-EP
SGLS335A
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Untitled
Abstract: No abstract text available
Text: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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LM2902-EP
SGLS335A
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LM2902KV-EP
Abstract: 15-V LM2902
Text: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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LM2902-EP
SGLS335A
LM2902KV-EP
15-V
LM2902
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ss32 control pack
Abstract: No abstract text available
Text: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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TPS75003-EP
SGLS311
300-mA
ss32 control pack
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CDRH8D43-150
Abstract: c15 dms ldo
Text: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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TPS75003-EP
SGLS311
300-mA
CDRH8D43-150
c15 dms ldo
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ss32 control pack
Abstract: No abstract text available
Text: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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TPS75003-EP
SGLS311
300-mA
ss32 control pack
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ss32 control pack
Abstract: control pack ss32
Text: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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TPS75003-EP
SGLS311
300-mA
ss32 control pack
control pack ss32
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ss32 control pack
Abstract: do214ab CDRH6D38 CDRH8D43 Si2323DS SS32 TPS75003 TPS75003-EP TPS75003MRHLREP EN298
Text: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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TPS75003-EP
SGLS311
300-mA
ss32 control pack
do214ab
CDRH6D38
CDRH8D43
Si2323DS
SS32
TPS75003
TPS75003-EP
TPS75003MRHLREP
EN298
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Untitled
Abstract: No abstract text available
Text: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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TPS75003-EP
SGLS311
300-mA
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Untitled
Abstract: No abstract text available
Text: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C
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TPS75003-EP
SGLS311
300-mA
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AM1011-500
Abstract: M198 SGS-THOMSON 435
Text: AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY SIXPAC HERMETIC METAL/CERAMIC PACKAGE EMITTER SITE BALLASTED OVERLAY GEOMETRY REFRACTORY/GOLD METALLIZATION
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AM1011-500
AM1011-500
M198
SGS-THOMSON 435
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cii 117 q
Abstract: ic 5657
Text: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA
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IRGP4078DPbF
IRGP4078D-EP
IRGP4078D-EPbF
O-247AC
O-247AD
JESD47F)
cii 117 q
ic 5657
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100A6
Abstract: IRGP4078DPBF
Text: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA
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IRGP4078DPbF
IRGP4078D-EP
IRGP4078DPbF/EP
O-247AC
O-247AD
JESD47F)
100A6
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81450M
Abstract: MSC81450M
Text: MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 450 W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL S038
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MSC81450M
81450M
MSC81450M
81450M
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SEIKO
Abstract: cmos SENSOR 15um 8 pin IC 1038 ic 0808 pin diagram PHOTO SCS seiko 64 s chip
Text: S-8603AWI rev.1.01 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR The S-8603AWI is a suitable linear image sensor for a multichip-type contact image sensor with a resolution of 8 dots per mm. This IC integrates a 64dots photo-transistor array and a CMOS scanning circuit.
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S-8603AWI
S-8603AWI
64dots
Figure-10
SEIKO
cmos SENSOR 15um
8 pin IC 1038
ic 0808 pin diagram
PHOTO SCS
seiko 64 s chip
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n4300
Abstract: 2n1718 XB401 2N1720 XB412 T0117 transistor t05 XB411 2N3375 2N4128
Text: Silicon Power Transistors Type Case No. C o 11 Toase = 25°C V CBO V O o > > "tn o o w u w Typical Performance Maximum Ratings at V EBO ^C DC V A f Ptot W MHz V CC V P IN W pOUT W nC % *T MHz c OB pF sc/oc3 VH F NPN 2N3866 T039 EP 55 30 4 400 28 0-1 1*2 45
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N3866
XB401
2N3375
XB404
XB408
XB409
2N4128
T0117
2N3418
2N3419
n4300
2n1718
2N1720
XB412
transistor t05
XB411
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n4300
Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
Text: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.
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TIXS12
TIXS13
1200t
2N696
2N697
2N698
2N1507
2N1613
2N1711
2N3418
n4300
32Vj
2N1719
2N4000
2N696 TEXAS INSTRUMENTS
transistor t05
XB412
2N3419
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BDS940
Abstract: BOS938 lem HA BDS934 BDS936 BDS938 BDS942 USB002 smd transistors 458
Text: Philips Component« BDS934/936/938/940/942 Datasheet status Product specification date of Issue April 1991 PNP silicon epitaxial base power transistors PINNING -SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors
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BDS934/936/938/940/942
OT223)
BDS933/935/
BDS934
BDS936
BDS938
BDS940
BDS942
BOS938
lem HA
USB002
smd transistors 458
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2SC3018
Abstract: NPN Silicon Epitaxial Planar Transistor High volt
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3018 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2 S C 3 0 1 8 is a silicon NPN epitaxial planar typ e tra n sisto r desig OUTLINE DRAWING Dimensions in mm ned fo r 7 .2 V o lts VHF pow er am plifiers applications. FEATURES
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2SC3018
2SC3018
NPN Silicon Epitaxial Planar Transistor High volt
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2sc2904 TRANSISTOR
Abstract: 2SC2904 hf amplifier 100w T-40
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EP ITA X IA L PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2 S C 2 9 0 4 is a silicon N P N epitaxial planar type transistor Dimensions in mm sp e cific a lly designed fo r high pow er a m plifiers in H F band. R1 FEATURES
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2SC2904
2SC2904
2sc2904 TRANSISTOR
hf amplifier 100w
T-40
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