EPC2012 Search Results

Contextual Info: eGaN FET DATASHEET EPC2012 EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: EPC2012 eGaN FET DATASHEET EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure

s11 hall magnetic sensor

Contextual Info: WHITE PAPER: WP016 eGaN FET Small Signal RF Performance eGaN® FET Small Signal RF Performance EFFICIENT POWER CONVERSION Michael de Rooij, Ph.D., Executive Director of Applications Engineering and Johan Strydom, Ph.D., V.P., Applications, Efficient Power Conversion Corporation

EPC8004

Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been

Contextual Info: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article,

Contextual Info: 1 2 4 3 5 6 A A 7 - 12 Vdc J1 1 2 CON2 D3 BAV21 C10 1uF, 25V TP2 Keystone 5015 PWM1 1 2 CON2 J9 2 R1 10k 1 2 3 CON2 A B GND VDD 5 Y 1 C1 1uF, 25V C2 1uF, 25V 5 C11 1uF, 25V C12 0.22uF, 25V U6 U2 6 C6 100p VDD REG C8 0.22uF, 25V VREF 2 150V Max R11 Q1 BAS40LP

Si8410BB

Contextual Info: Figure 4: Waveforms for VIN = 150 V to 5 V/2 A 100kHz Buck converter CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9004 development board does not have any current or thermal protection on board.

EPC TRANSFORMER

Abstract: EPC-12-100 EPC56 transformer 230V to 12V 500mA EPC-10-90 EPC40 EPC-120-200 EPC1012 EPC-34 epcd
Contextual Info: EPC SERIES Miniature Plug in Power Transformers STYLE B STYLE C STYLE D STYLE E Mechanical Dimensions: EPC SERIES UNIT:mm 140 EPC SERIES Miniature Plug in Power Transformers œ PRIMARY 50/60Hz Power transformer-concentric or split winding construction Single 115V