EPITAXIAL MESA Search Results

Contextual Info: SENSITRON SEMICONDUCTOR 1C6622 TECHNICAL DATA DATASHEET 345, REV B SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Glass passivated Epitaxial Diode with Mesa Structure

Contextual Info: EPITAXIAL BASE - lCM UP TO 30A; VCEO UP TO 100V MAIN FEATURES • NPN and PNP types perfect complementary pairs ■ Medium switching speed ■ Medium fy (2 to 20 MHz) ■ High ruggedness THERMAL OXIDE P VAPOX Al GIAS! INTERNAL SCHEMATIC DIAGRAMS Epitaxial Base Technology is a general purpose low

GVD30422-001

Contextual Info: Preliminary Data - January 1999 GVD30400 SERIES SPRAGUE-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • Mesa Epitaxial Silicon Construction > Silicon Dioxide Passivated • Superior Wide Range Linear Characteristics

Contextual Info: Preliminary Data - January 1999 GVD30600 SERIES SPRAGIH-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS « Mesa Epitaxial Silicon Construction • Silicon Dioxide Passivated > Superior Wide Range Linear Characteristics

Contextual Info: MRS1504T3 Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

MARKING rgg smb

Contextual Info: MRS1504T3 Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

micrometrics vco

Abstract: MHV502
Contextual Info: Microwave Hyperabrupt Tuning Varactors Description The MicroMetrics MHV 500 series Microwave Hyperabrupt Tuning Varactors are silicon epitaxial mesa devices with high reliability glass passivation which ensures optimum VCO settling time and flat post tuning

MRS1504T3

Abstract: MRS1504T3G
Contextual Info: MRS1504T3 Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

MRS1504T3

Contextual Info: MRS1504T3 Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

MicroMetrics MHV 500 series

Abstract: MHV500 MHV513 MHV512 MHV503 MHV502 MHV501 MHV504 MHV507 "Tuning Varactors"
Contextual Info: Microwave Hyperabrupt Tuning Varactors Description The MicroMetrics MHV 500 series Microwave Hyperabrupt Tuning Varactors are silicon epitaxial mesa devices with high reliability glass passivation which ensures optimum VCO settling time and flat post tuning

Contextual Info: MRS1504T3 Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

Contextual Info: MRS1504T3G, NRVS1504T3G Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

NRVS1504

Abstract: MRS1504T3G
Contextual Info: MRS1504T3G, NRVS1504T3G Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

Contextual Info: MRS1504T3G, NRVS1504T3G Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

QW-R203-019

Abstract: MJE13007
Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

mje13003

Abstract: UTCMJE13003 transistor mje13003 MJE13003 transistor
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-126 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

transistor mje13003

Abstract: mje13003 MJE13003 transistor UTCMJE13003 QW-R203-017 equivalent mje13003 transistor Ic 1A datasheet NPN NPN Transistor 1.5A 700V
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

NTD408

Abstract: e100n HUMMER
Contextual Info: SEC SILICON DARLINGTON POWER TRANSISTOR NTD408 ELECTRON DEVICE LOW FREQUENCY AMPLIFIER AND LOW SPEED SW ITCHING NPN SILICON EPITAXIAL MESA DARLINGTON TRANSISTOR Industrial Use DESCRIPTIO N Suitable for hummer driver, pulse motor driver and relay driver applications.

PT 10000

Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

Ultrafast RECTIFIER DIODES ON Semiconductor DATA

Abstract: 1N5817 2N2222 2N6277 MURP20040CT URP20040CT
Contextual Info: MOTOROLA Order this document by MURP20040CT/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MURP20040CT Designer's Ultrafast Power Rectifier ULTRAFAST RECTIFIER 200 AMPERES POWERTAP II Package Features mesa epitaxial construction with glass passivation. Ideally suited

MJE13005

Abstract: mje-13005 QW-R203-018 PT 10000
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

RECTIFIER DIODES Motorola

Abstract: MRS1504T3
Contextual Info: MOTOROLA Order this document by MRS1504T3/D SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Standard Recovery Power Rectifier MRS1504T3 SMB Power Surface Mount Package STANDARD RECOVERY RECTIFIER 1.5 AMPERES 400 VOLTS Features mesa epitaxial construction with glass passivation.

Contextual Info: SILICON HYPERABRUPT JUNCTION TUNING VARACTOR This series of silicon m icrowave tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning up to Ku band.