EPITAXIAL VARACTOR Search Results

bxy27

Abstract: 2ghz diode BXV27 Frequency Doubler use diode "Varactor Diode" IBB865I varactor ghz power varactor diode 1GHz varactor diode filter
Contextual Info: SILICON PLANAR EPITAXIAL VARACTOR DIODE BXY27 Silicon planar epitaxial varactor diode exhibiting step recovery characteristics, especially suitable for use in frequency multiplier circu its up to 'S' band output frequency. It is a diffused silicon device and is mounted in a sm all double-ended ceram ic-m etal

"Varactor Diode"

Abstract: BXY32 varactor diode X-band x5 frequency multiplier
Contextual Info: BXY32 SILICON PLANAR EPITAXIAL VARACTOR DIODE T E N T A T IV E D A TA Silicon planar epitaxial varactor diode exhibiting step recovery characteristics, especially suitable for high order frequency multiplier circuits up to X-band output frequency. It is a diffused silicon device and is mounted in a small double-ended ceram ic-m etal

varactor diode X-band

Abstract: b0930 varactor ghz x-band varactor diode "Varactor Diode" BXY29 mullard power varactor
Contextual Info: SILICON PLANAR EPITAXIAL VARACTOR DIODE BXY29 T E N T A T IV E DATA Silicon planar epitaxial v a ra cto r diode exhibiting step reco v ery c h a ra c te ris tic s , esp ecially su itable fo r high ord er frequency m ultiplier circu its-u p to X-band output

GVD30422-001

Contextual Info: Preliminary Data - January 1999 GVD30400 SERIES SPRAGUE-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • Mesa Epitaxial Silicon Construction > Silicon Dioxide Passivated • Superior Wide Range Linear Characteristics

Contextual Info: Preliminary Data - January 1999 GVD30600 SERIES SPRAGIH-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS « Mesa Epitaxial Silicon Construction • Silicon Dioxide Passivated > Superior Wide Range Linear Characteristics

MSD700

Abstract: MSD703 MSD710 MSD706 MSD702 MSD701 MSD720 MSD731 MSD732 MSD705
Contextual Info: Multiplier Devices: MSD 700 Series Multiplier Devices Step Recovery Diodes Description The MicroMetrics MSD 700 series Step Recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications.

micrometrics vco

Abstract: MHV502
Contextual Info: Microwave Hyperabrupt Tuning Varactors Description The MicroMetrics MHV 500 series Microwave Hyperabrupt Tuning Varactors are silicon epitaxial mesa devices with high reliability glass passivation which ensures optimum VCO settling time and flat post tuning

MicroMetrics MHV 500 series

Abstract: MHV500 MHV513 MHV512 MHV503 MHV502 MHV501 MHV504 MHV507 "Tuning Varactors"
Contextual Info: Microwave Hyperabrupt Tuning Varactors Description The MicroMetrics MHV 500 series Microwave Hyperabrupt Tuning Varactors are silicon epitaxial mesa devices with high reliability glass passivation which ensures optimum VCO settling time and flat post tuning

MSD700

Abstract: MSD710 MSD701 step recovery diode msd700 srd MSD724 MSD735 MSD706 MSD732 MSD705
Contextual Info: Multiplier Devices Multiplier Devices: MSD 700 Series Step Recovery Diodes Description The MicroMetrics MSD 700 series Step Recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications.

AT6021

Contextual Info: AT6021 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: The AT6021 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

UP Converters

Abstract: GC3204 Microwave Generator
Contextual Info: GC3202 – GC3208 TM POWER GENERATION Harmonics Generator Varactors RoHS Compliant KEY FEATURES The GC3200 series of harmonic generator varactors uses a single epitaxial silicon die. Strict material and process controls result in high reproducibility. A

Contextual Info: SILICON HYPERABRUPT JUNCTION TUNING VARACTOR This series of silicon m icrowave tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning up to Ku band.

gc15002-00

Abstract: GC15005
Contextual Info: GC15001 – GC15013 TUNING DIODES Frequency Linear Tuning Varactors TM RoHS Compliant KEY FEATURES A Frequency Linear Tuning Varactor FLTVAR is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications.

AT6020

Contextual Info: AT6020 SILICON ABRUPT JUNCTION TUNING VARACTOR PACKAGE STYLE 15 DESCRIPTION: The AT6020 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

GC15000

Abstract: TM 937 GC15001 GC15001-00 GC15002-00 GC15003-00 GC15004-00 GC15013 GC15002
Contextual Info: GC15001 – GC15013 TUNING DIODES Frequency Linear Tuning Varactors TM RoHS Compliant KEY FEATURES A Frequency Linear Tuning Varactor FLTVAR is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications.

Contextual Info: GC3202 – GC3208 TM POWER GENERATION Harmonics Generator Varactors RoHS Compliant K EY FEAT U RES The GC3200 series of harmonic generator varactors uses a single epitaxial silicon die. Strict material and process controls result in high reproducibility. A

varactor diode parameter

Abstract: tuning varactor CT25 Q62702-B70 BBY33
Contextual Info: Silicon Tuning Varactor ● BBY 33 BB-2 Tuning varactor in passivated Mesa technology epitaxial design Type Marking Ordering Code Pin Configuration Package1) BBY 33 BB-2 – Q62702-B70 Cathode: black dot, heat sink C1 Maximum Ratings Parameter Symbol Values

AT9019-10

Contextual Info: AT9019-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT9019-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

AT6019-10

Contextual Info: AT6019-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT6019-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

AT6017-10

Contextual Info: AT6017-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT6017-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

DH724

Abstract: DH730 DH732
Contextual Info: TUNING VARACTOR Silicon hyperabrupt junction tuning varactor SILICON HYPERABRUPT JUNCTION TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for VHF linear electronic tuning.

Contextual Info: Tuning Varactors FREQUENCY LINEAR TUNING VARACTORS DESCRIPTION APPLICATIONS A Frequency Linear Tuning Varactor FLTVAR TM is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications. These diodes feature ceramic glass or thermal oxide

AT9017-10

Contextual Info: AT9017-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT9017-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

ct60

Abstract: symbol of varactor diode and equivalent circuit varactor diode notes "Tuning Varactor" varactor APPLICATION AT6021M JC500
Contextual Info: AT6021M SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 15 The ASI AT6021M is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship