EPROM 64K X 16 Search Results

EPROM 2764-25

Abstract: SEEQ EPROM 2764-25 2764-25 SEEQ eprom intel eprom Intelligent algorithm
Contextual Info: 82005 MILITARY DRAWING 64K U V EPROM Technology, Incorporated _ May 1988 SEEQ's 82005 is a military drawing compliant, 21-volt programming, 65,532-bit 8192 x 8 , ultraviolet erasable EPROM. The 64K EPROM is fabricated and tested in

Contextual Info: NM27LV210 1,048,576-Bit 64K x 16 Low Voltage EPROM SEMICONDUCTOR TM NM27LV210 1,048,576-Bit (64K x 16) Low Voltage EPROM General Description Features The NM27LV210 is a high performance Low Voltage Electrical Programmable read only memory. It is manufactured using

27C210

Abstract: 27C220 27C240 NM27C210
Contextual Info: NM27C210 1,048,576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM27C210 is a high performance Electrically Programmable UV erasable ROM (EPROM). It contains 1,048,576 bits configured as 64K x 16 bit. It is offered in both erasable versions for

27C220

Abstract: 27C210 27C240 NM27C210
Contextual Info: NM27C210 1,048,576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM27C210 is a high performance Electrically Programmable UV erasable ROM (EPROM). It contains 1,048,576 bits configured as 64K x 16 bit. It is offered in both erasable versions for

A276308-70

Abstract: A276308L-70 1N914 A276308 A276308-55 A276308-90 A276308L-55 a276308l
Contextual Info: A276308 Preliminary 64K X 8 OTP CMOS EPROM Document Title 64K X 8 OTP CMOS EPROM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 17, 1998 Preliminary 0.1 Change program verify mode VCC from 6.25V to VCC December 16, 1998 PRELIMINARY

Contextual Info: NM27C210 1,048,576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM 27C210 is a high performance Electrically Program mable UV erasable ROM (EPROM). It contains 1,048,576 bits config­ ured as 64K x 16 bit. It is offered in both erasable versions for

27C1100

Abstract: 27c1024-55 27C1024 MX27C1100 ups vh 2000 27C110 27C1024 equivalent MX27C1024QC-55
Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin out • 128K x 8 or 64K x 16 organization(MX27C1100, ROM • • • • • Operating current: 40mA • Standby current: 100uA • Package type:

A276308AL-70

Abstract: A276308A-70 1N914 A276308A A276308A-55 A276308A-90 A276308AL-55
Contextual Info: A276308A 64K X 8 OTP CMOS EPROM Document Title 64K X 8 OTP CMOS EPROM Revision History History Issue Date Remark 0.0 Initial issue March 24, 2000 Preliminary 0.1 Change Program Verify VCC to 6.25V March 14, 2001 1.0 Final spec release December 17, 2001 Rev. No.

27c1024

Abstract: 27C1024 equivalent EPROM sop 40 EPROM 40PIN 27C1100 MX27C1100
Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)

Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)

32-PIN RAD-PAK FLAT PACKAGE

Contextual Info: 27C512T 512K 64K x 8-Bit OTP EPROM A5-A9 1024 x 1022 Memory Matrix x-Decoder A12-A16 I/O0 Y- Gating Input Data Control I/O15 Y - Decoder CE OE A0-A4 A10-A11 PGM VCC VPP VSS H H : High Threshhold Inverter FEATURES: DESCRIPTION: • 64K x 8-bit OTP EPROM organization

AMD 8051AH

Abstract: 8751H/8753H
Contextual Info: 8751H/8753H Single-Chip 8-Bit Microcontroller MILITARY INFORMATION • • • • Military Temperature Range - -5 5 to + 125°C Tc 4 K x 8 EPROM (8751); 8 K x 8 EPROM (8753) 128x8 RAM 64K bytes Program Memory space 64K bytes Data Memory space • • •

MX27C1100

Contextual Info: Introduction Selection Guide MX27C1100/27C1024 1M-BIT 128K x 8/64K x 16 CMOS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin out) • 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/85/100/120/150 ns

8751H

Abstract: ta 8751h 8753H variable oscillator Z1P21 4kx8 eprom
Contextual Info: 8751H/8753H Single-Chip 8-Bit Microcontroller MILITARY INFORMATION • • • • M ilitary Tem perature Range - - 5 5 to + 125°C Tc 4 K x 8 EPROM (8751); 8 K x 8 EPROM (8753) 1 2 8 x 8 RAM 64K bytes Program M em ory space 64K bytes Data M em ory space

M27C210

Contextual Info: inte M27C210 1M 64K x 16) WORD-WIDE HIGH-SPEED CMOS EPROM • JEDEC Approved EPROM Pinout — 40-Pin DIP ■ Fast Programming — Quick-Pulse Programming ■ Complete Upgrade to Higher Densities Algorithm ■ Versatile EPROM Features — CMOS and TTL Compatibility

x27c

Contextual Info: B k J B := . • E S ■ W f c r s i Wè ê ë ê MX27C1 100/27C1 024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • • Operating current: 40mA 64K x 16 organization MX27C1024, JEDEC pin out • Standby current: 100uA • 128K x 8 or 64K x 16 organization(M X27C1100,

Contextual Info: NM27C520 524,288-Bit 64K x 8 Multiplexed Addresses/Outputs OTP CMOS EPROM General Description Features The NM27C520 is a high performance 512K CMOS one-time programmable read only memory (EPROM) manufactured using Fairchild's proprietary CMOS AMG EPROM technology for an

NM27LV210

Abstract: V44A
Contextual Info: NM27LV210 1,048,576-Bit 64K x 16 Low Voltage EPROM General Description Features The NM27LV210 is a high performance Low Voltage Electrical Programmable read only memory. It is manufactured using Fairchild’s latest EPROM technology. This technology allows the

Contextual Info: NM27C520 524,288-Bit 64K x 8 Multiplexed Addresses/Outputs OTP CMOS EPROM General Description Features The NM 27C520 is a high performance 512K CM OS one-time programmable read only memory (EPROM) manufactured using Fairchild's proprietary CMOS AMG EPROM technology for an

27L512 eprom

Contextual Info: ADVANCED INFORMATION MX27L512 512K-BIT [64K x 8] CMOS EPROM FEATURES • 64K x 8 organization • Completely TTL compatible • Wide voltage range, 2.7V to 3.6V • Operating current: 10mA@ 3.6V, 5MHz • +12.5V programming voltage • Standby current: 10uA

M27G512

Abstract: 27G512
Contextual Info: January 1998 S E M IC O N D U C T O R FM27C512-L 524,288-Bit 64K x 8 Low Power Fast EPROM General Description The FM27C512 is a low-power 512Kbit, 5V-only one-timeprogrammable (OTP) read-only memory (EPROM), orga­ nized into 64K words with 8 bits per word. Any byte can be

Contextual Info: January 1998 S E M IC O N D U C T O R FM 27LV512-L 524,288-B it 64K x 8 Low Voltage, Low Pow er EPROM General Description The FM27LV512 is a low voltage, low-power 512Kbit, 3.3Vonly one-time-programmable (OTP) read-only memory (EPROM), organized into 64K words with 8 bits per word.

MX27L512MC-12

Abstract: MX27L512MC12 IN3064 MX27L512
Contextual Info: Introduction ADVANCED INFORMATION MX27L512 512K-BIT 64K x 8 CMOS EPROM FEATURES • • • • • • • • • 64K x 8 organization Wide voltage range, 2.7V to 3.6V +12.5V programming voltage Fast access time: 120/150/200/250ns Totally static operation

Contextual Info: 27C512 Microchip 512K 64K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C512 is a CMOS 512K • High speed performance bit (electrically) P rogramm able Read Only Memory. The — 90ns access tim e available device is organized into 64K words by 8 bits (64K bytes).