NM27C512
Abstract: No abstract text available
Text: General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory EPROM . It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while providing excellent reliability.
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NM27C512
con0-530
ds010834
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TMS27C512
Abstract: TMS27C256 TMS320 TMS320C52
Text: Number 67 TMS320 DSP DESIGNERS NOTEBOOK Interfacing a TMS320C2x, ’C2xx, or ’C5x DSP to an 8-bit boot EPROM Contributed by Gary Przyborski, Advantor Corp. Design Problem Solution How do you interface a C2x, C2xx, or C5x DSP to an 8-bit boot EPROM?
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TMS320
TMS320C2x,
TMS27C256
TMS27C512
0X8000
00020h
TMS320C52
TMS320C52
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68HC705K1
Abstract: 68HC705KJ1 AN1238 68HC705 AN1240 HC05 MC68HC705KJ1 MC68HLC705KJ1 MC68HRC705KJ1
Text: 68HC705 KJ1 • Designed for robust noise immunity • 4.0 MHz standard internal operating frequency at 5.0 V • 1240 bytes of EPROM/OTPROM, including eight bytes for user vectors • Selectable EPROM security • 64 bytes of user RAM • Memory-mapped I/O registers
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68HC705
68HC705KJ1
MC68HC705KJ1
68HC705K1
68HC705KJ1
AN1238
AN1240
HC05
MC68HC705KJ1
MC68HLC705KJ1
MC68HRC705KJ1
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dallas nvram
Abstract: 74HC4053 DS5000FP DS5001FP DS5002FP
Text: APPLICATION NOTE 94 Application Note 94 Using the Secure Microcontroller with EPROM/ROM OVERVIEW The Soft Microcontroller family is designed to take advantage of the many features provided by NVRAM technology. Occasionally a designer may wish to use an EPROM or other non–battery backed technology for
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DS5000FP
DS5001FP
74HC4053
dallas nvram
DS5002FP
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68HC705J1A
Abstract: 68HC705 705J1A of 68HC705 "resistor set oscillator" dip AN1240 AD8402 AN1238 DS1620 MC68HC705J1A
Text: 68HC705 J1A • Designed for robust noise immunity • Up to 4.0 MHz internal operating frequency at 5.0 V • 1240 bytes of EPROM/OTPROM, including eight bytes for user vectors • Selectable EPROM security • 64 bytes of user RAM • Memory-mapped I/O registers
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68HC705
68HC705J1A
MC68HC705J1A
DS1620
AD8402
705J1A
of 68HC705
"resistor set oscillator" dip
AN1240
AN1238
DS1620
MC68HC705J1A
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J24AQ
Abstract: NMC27C16B NMC27C16BQ NMC27C16BQ150 NMC27C16BQ200 NMC27C16BQE150 NMC27C16BQE200
Text: General Description Features The NMC27C16B is a high performance 16K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation and low power consumption are important requirements.
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NMC27C16B
24-pin
reliabili0-530
ds009180
J24AQ
NMC27C16BQ
NMC27C16BQ150
NMC27C16BQ200
NMC27C16BQE150
NMC27C16BQE200
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DSP56300
Abstract: DSP56303PV80 APR27 AT28C16-25 DSP56000 DSP56301 DSP56303 QS3245 512Kx8-bit
Text: Freescale Semiconductor Application Note Interfacing EPROM and EEPROM Memory with the DSP56300 Family of Digital Signal Processors by Phil Brewer This application note describes how to interface electrically erasable and programmable read only memory EEPROM and
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DSP56300
24-Bit
24-Bit
DSP56301,
DSP56303
DSP56303PV80
APR27
AT28C16-25
DSP56000
DSP56301
DSP56303
QS3245
512Kx8-bit
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DSP56303PV80
Abstract: AT8C16 27 eprom programmer schematic DSP56300 APR27 AT28C16 AT28C16-25 DSP56000 DSP56303 QS3245
Text: Freescale Semiconductor Application Note APR27 Rev. 1, 10/2005 Interfacing EPROM and EEPROM Memory with the DSP56300 Family of Digital Signal Processors by Phil Brewer This application note describes how to interface electrically erasable and programmable read only memory EEPROM and
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APR27
DSP56300
24-Bit
24-Bit
DSP56303PV80
AT8C16
27 eprom programmer schematic
APR27
AT28C16
AT28C16-25
DSP56000
DSP56303
QS3245
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EPROM 27256
Abstract: eprom 27c256 28 PIN DIP 150 NS Vpp of 27256 eprom 27C256 NM27C256 6767
Text: General Description The NM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 120 ns access time over the full operating range.
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NM27C256
NM27C256,
ds010833
EPROM 27256
eprom 27c256 28 PIN DIP 150 NS
Vpp of 27256 eprom
27C256
6767
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interfacing eprom and eeprom
Abstract: 27 eprom programmer schematic 2kx8 EPROM DSP56300 0d108 DSP56301 DSP56302 DSP56303 DSP56000 atmel eeprom
Text: MOTOROLA Order by APR 27/D Motorola Order Number Rev. 0 , 4/05/99 Semiconductor Application Note by Phil Brewer 1 Overview This application note describes how to interface electrically erasable and programmable read only memory (EEPROM) and erasable programmable read only memory (EPROM)
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DSP56300
24-Bit
Office141
interfacing eprom and eeprom
27 eprom programmer schematic
2kx8 EPROM
0d108
DSP56301
DSP56302
DSP56303
DSP56000
atmel eeprom
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dallas 2502
Abstract: dallas ds2502 DS2502P eprom 6 pin BSS110 DS2502 DS2502S DS2502T DS2502V DS2502Y
Text: DS2502 DS2502 1Kbit Add–Only Memory FEATURES PIN ASSIGNMENT • 1024–bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory–lasered and tested 64–bit registration number (8–bit family code + 48–bit serial number
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DS2502
dallas 2502
dallas ds2502
DS2502P
eprom 6 pin
BSS110
DS2502
DS2502S
DS2502T
DS2502V
DS2502Y
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Untitled
Abstract: No abstract text available
Text: General Description The NM27LV020 is a high performance Low Voltage Electrical Programmable Read Only Memory. It is manufactured using Fairchild’s latest 0.8µ CMOS split gate AMG EPROM technology. This technology allows the part to operate at speeds as fast as 150 ns over industrial temperatures
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NM27LV020
for0-530
ds012329
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a6627
Abstract: DS1645Y 32-PIN DS1645EE 1024K
Text: DS1645EE DS1645EE Partitioned 1024K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of VCC • Data is automatically protected during power loss • Directly replaces 128K x 8 EPROM, EEPROM, or FLASH NC 1 32 VCC A16 2 31 WE A15 3 30 NC A12
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DS1645EE
1024K
DS1645Y
DS1645Y/AB
a6627
32-PIN
DS1645EE
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TMS27C512
Abstract: TMS27C256 TMS320C2X TMS320 TMS320C52 SPRA263
Text: TMS320 DSP DESIGNER’S NOTEBOOK Interfacing a TMS320C2x, ’C2xx, or ’C5x DSP to an 8-Bit Boot EPROM APPLICATION BRIEF: SPRA263 Gary Przyborski Digital Signal Processing Products Semiconductor Group Texas Instruments October 1995 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor
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TMS320
TMS320C2x,
SPRA263
TMS27C512,
0X8000
TMS27C512.
0X0000
TMS320C52
00020h
TMS27C512
TMS27C256
TMS320C2X
TMS320C52
SPRA263
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Untitled
Abstract: No abstract text available
Text: WSMAP162/WSMAP161 ADVANCE INFORMATION WAFERSCALE INTEGRATION, INC. HIGH-SPEED MAPPABLE MEMORY MAP KEY FEATURES Super Fast Access Time • Addressable Range — EPROM/SRAM: 40 ns (including decode) — Chip Select Outputs: 22 ns High Density UV Erasable EPROM
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WSMAP162/WSMAP161
MIL-STD-883C
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Architecture and features of TMS320XX
Abstract: TMS320XX WS*57c257 ws57c257 eprom ram 512k x 16 bits
Text: WSMAP162/WSMAP161 WAFERSCALE INTEGRA 770N, INC. ADVANCE INFORMATION HIGH-SPEED MAPPABLE MEMORY MAPm KEY FEATURES • Super Fast Access Time • Addressable Range — EPROM/SRAM: 40 ns (including decode) — Chip Select Outputs: 22 ns • High Density UV Erasable EPROM
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WSMAP162/WSMAP161
MIL-STD-S83C
WSMAP161-55P
WSMAP162/WSMAP161
Architecture and features of TMS320XX
TMS320XX
WS*57c257
ws57c257
eprom ram 512k x 16 bits
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Untitled
Abstract: No abstract text available
Text: WSMAP168 ADVANCE INFORMATION WAFERSCALE INTEGRA TION, INC. HIGH SPEED MAPPABLE MEMORY MAP KEY FEATURES Super Fast Access Time Addressable Range — EPROM/SRAM: 40 ns (including decode) — Chip Select Outputs: 22 ns — Fast Chip Select Output: 17 ns
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WSMAP168
MIL-STD-883C
MIL-8TD-883C
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Untitled
Abstract: No abstract text available
Text: s CY7C281A CY7C282A PRELIMINARY :.~ igs£= * CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable
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CY7C281A
CY7C282A
300-mil
600-mil
28-pin
7C281A
7C282A
1024-word
600-mil-wide
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WS57C257
Abstract: TMS320XX Waferscale Integration WS*57c257 AP1684 2K EPROM 3231F 4k prom A327A
Text: WSMAP168 ADVANCE INFORMATION WAFERSCALE INTEGRATION, INC. HIGH SPEED MAPPABLE MEMORY MAP KEY FEATURES Super Fast Access Time Addressable Range — EPROM/SRAM: 40 ns (including decode) — Chip Select Outputs: 22 ns — Fast Chip Select Output: 17 ns — 2M Bytes or 1M Words
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WSMAP168
WSMAP168-40X
WSMAP168-40XMB
MIL-STD-883C
WSMAP168-45C
WSMAP168-45CMB
WSMAP168-45J
WSMAP168-45X
WSMAP168-45XM
WS57C257
TMS320XX
Waferscale Integration
WS*57c257
AP1684
2K EPROM
3231F
4k prom
A327A
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intel embedded microcontroller handbook
Abstract: No abstract text available
Text: in y 8XC52/54/58 CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER Com m ercial/Express 87C52/80C52/80C32/87C54/80C54/87C58/80C58 •S e e Table 1 for Proliferation Options • 6 Interrupt Sources ■ High Performance CHMOS EPROM/ ROM/CPU ■ Programmable Serial Channel with:
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8XC52/54/58
87C52/80C52/80C32/87C54/80C54/87C58/80C58
16-Bit
8K/16K/32K
80032-StanÂ
80C52-Standard,
87C52/80C52/80C32
87C52/80C52/80C32
87C52-20/80C52-20/80C32-20
87C54/80C54
intel embedded microcontroller handbook
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2360 JRC
Abstract: JRC 2360
Text: 87C196KR, 87C196JV, 87C196JT, 87C196JR, and 87C196CA Advanced 16-Bit CHMOS Microcontrollers Automotive Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ -4 0 °C to +125 °C Ambient High Performance CHMOS 16-Bit CPU Up to 48 Kbytes of On-Chip EPROM
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87C196KR,
87C196JV,
87C196JT,
87C196JR,
87C196CA
16-Bit
Channel/10-Bit
4fl2bl75
2360 JRC
JRC 2360
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JRC 2360
Abstract: 2360 JRC jrc 2360 supply AN87C196CA 87C196CA AN87C196KR 80C196KB 87C196JR 87C196JT 87C196JV
Text: inU 87C196KR, 87C196JV, 87C196JT, 87C196JR, and 87C196CA Advanced 16-Bit CHMOS Microcontrollers Automotive Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ -4 0 °C to +125 °C Ambient High Performance CHMOS 16-Bit CPU Up to 48 Kbytes of On-Chip EPROM
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87C196KR,
87C196JV,
87C196JT,
87C196JR,
87C196CA
16-Bit
Channel/10-Bit
482bl75
JRC 2360
2360 JRC
jrc 2360 supply
AN87C196CA
AN87C196KR
80C196KB
87C196JR
87C196JT
87C196JV
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Untitled
Abstract: No abstract text available
Text: CY7C281A CY7C282A PRELIMINARY CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP
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CY7C281A
CY7C282A
300-mil
600-mil
28-pin
7C281A
7C282A
1024-word
600-mil-wide
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Untitled
Abstract: No abstract text available
Text: DALLAS DS1982 1Kbit Add—Only Touch M6mory se m ic o n d u c to r SP EC IA L FEA TU RES COMMON TOUCH MEMORY FEATU RES • 1024-bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory-lasered and tested 64-bit registra
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1024-bits
64-bit
48-bit
256-bit
2bl413D
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