EPSILAM 10 Search Results

Contextual Info: N AtlER P H I L I P S / DI S C R E T E ObE.D • bb53^31 U □□ISIS? □ ■ PZ1418B15U PZ1721B12U P Z2024B 10U l 77- 3 3 ' 0 7 M ICRO W AVE POWER TR AN SISTO RS FOR BR O AD BAN D A M P LIFIE R S N-P-N transistors for use in common-base, class-B, wideband amplifiers under c.w. conditions in

Contextual Info: ^ PHILIPS international PZ1418B15U PZ1721B12U p Z2024B10U I 5bE J> m 7110flEb OGMbMbfl 25S •PHIN MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS T ^ -3 3 -O S N PN transistors for use in common-base, class-B, wideband amplifiers under CW conditions in military

Contextual Info: j N AMER P H I L I P S / D I S C R E T E DbE D • 0015137 J 3 ■ PZ1418B30U PZ1721B25U lPZ2024B20U T - 33 ''ll MICROWAVE POW ER TRANSISTORS FO R WIDEBAND A M P LIFIER S N-P-N transistors for use in common-base, class-B, broadband amplifiers under c.w. conditions in

PZ1418B30U

Abstract: PZ1721B25U PZ2024B20U
Contextual Info: N AMER PHILIPS/DISCRETE DbE D • LbSBTBl DD1S137 3 ■ " PZ1418B30U PZ1721B25U PZ2024B20U J T - 3 3 - U MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS N-P-N transistors for use in common-base, class-B, broadband amplifiers under c.w. conditions in m ilitary and professional applications.

transistor M7A

Abstract: philips 33m PZ1418B30U PZ1721B25U PZ2024B20U epsilam 10
Contextual Info: PZ1418B30U PZ1721B25U JÌ P Z 2 0 2 4 B 2 0 U PHILIPS INTERNATIONAL SbE D • 711GÛ2b DCmb47fl ITH ■ PHIN MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS NPN transistors fo r use in common-base, ciass-B, broadband am plifiers under CW conditions in

epsilam

Abstract: PZ1721B12U PZ1418B15U PZ2024B10U 7Z92941
Contextual Info: ObE .D N AMER PHI LIPS /D ISCR ET E [^ 5 3 ^ 3 1 A □□ISIS? □ • PZ1418B15U PZ1721B12U PZ2024B10U MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS N-P-N transistors fo r use in common-base, class-B, wideband am plifiers under c.w. conditions in m ilita ry and professional applications and intended to drive PZ1418B30U/PZ1721B25U/PZ2024B20U

epsilam 10

Abstract: 5308-2CC M151 SD1893-03 epsilam cdi ic
Contextual Info: SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS POUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL M151 hermetically sealed ORDER CODE

5308-2CC

Abstract: 6 pin cdi epsilam 10 epsilam InMarSat power M151 SD1893-03 cdi ic
Contextual Info: SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS P OUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL M151 hermetically sealed ORDER CODE

12W92

Abstract: 4.25mhz s0151 25CC M105 SD1511-08 SD1511-8 sd1151 SD11511-8 12w 92
Contextual Info: M í ^Products M l l f f / v f j-im -i r - S f Jl P rog resa P o w ered b y T e c h no log y 140 Com merce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 5 1 1-8 RF & MICROWAVE TRANSISTORS UHF PULSE POWER COMMON EMITTER 12W TYPICAL CW 15W TYPICAL PULSED

5308-2CC

Abstract: M151 SD1893
Contextual Info: H m ; t^tPa n 'r-tSj-» «rar». S f It P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive n Montgomeryville, rPA 18936-1013 Tel: 215 631-9840 iiiu iH u u n ic i y v iiiu , A M A A A SD1893 RF & MICROWAVE TRANSISTORS MARISAT APPLICATIONS • FREQUENCY

Contextual Info: m mmPJ Prouvas M m ic r o s e m i 140 Commerce Drive Montgomeryviile, PA 18936-1013 Tel: <215> 631-9840 SD1868 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FR E Q U EN C Y 1.6-1 ,£5GHi PO W ER OU'!' 30W PO W ER GAIN S.7uB 28 0V V O L 'A G t

44w TRANSISTOR

Abstract: BV 1351 24V epsilam 10 mb 8936 M147 TCC1417-25 sd1066 1029f 1417-25
Contextual Info: H * : I f/ lv f T»j-m ! fII P ro g re s s P o w e re d b y T ec h no log y "*4 Commerce Drive Montgom ery ville, PA 18936-1013. Tel: 215 631-9840 TC C 1417-25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.4 1.7GHz POWER OUT

SD1891

Abstract: baw 92 S98S MIS1 5308-2CC ATC100 M151
Contextual Info: m m m RF Products M m ic r o s e m i P ro g re s s P o w e re d b y T ec h no log y 140 Com merce Drive Montgomery ville, PA 18936-1013 Tel: 215 631-9840 SD1891 RF & MICROWAVE TRANSISTORS MARISAT APPLICATIONS FREQUENCY I.65GHz POWER OUT 3.0W POWER GAIN I I ,5dB

SD1887

Abstract: transistor 2Fn M147 TCC2023-16
Contextual Info: H M «-» J IV II C r O S e m i Progress Powered by Technology 140 Commerce Drive M ontgom eryville, PA 1 8936-1013. Tel: 215 631-9840 T C C 20 2 3 -1 6 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 2.0-2.3GHz POWER OUT 16.0W

Contextual Info: SGS-THOMSON S D 1 8 9 3 -0 3 It L I C T G » RF & MICROW AVE TR AN SISTO RS 1.6 GHZ SATCOM APPLIC ATIO N S . 1.65 GHz • 28 VOLTS . OVERLAY DIE GEOMETRY . GOLD METALLIZATION * HIGH RELIABILITY AND RUGGEDNESS ■ P o u t = 10 W MIN. WITH 11.0 dB GAIN . COMMON BASE

Contextual Info: / = 7 S G S - T H O M S O N SD1542 ^ 7 / . M Œ m iIêTM M IKêS RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS . 600 WATTS typ. IFF 1030/1090 MHz . 550 WATTS (min.) DME 1025 - 1150 MHz • 5.6 dB MIN. GAIN

Contextual Info: 5 7 . SGS-THOMSON SD1893-03 lu RF & MICROWAVE TRANSISTO RS 1.6 GHZ SATCOM APPLICATIONS 1.65 GHz 28 VO LTS O VER LAY DIE G EOM ETRY GO LD M ETALLIZATIO N HIGH RELIABILITY AND RUG GEDNESS P o u t = 10 W MIN. W ITH 11.0 dB GAIN COM M ON BASE PIN CON NECTION D E S C R IP T IO N

RX1214B170W

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEA TU R ES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK R E F E R E N C E DATA

epsilam

Abstract: PZ1418B15U PZ1721B12U PZ2024B10U
Contextual Info: JI _ - PHILIPS PZ1418B15U PZ1721B12U PZ2024B10U SbE J> INTERNATIONAL • 7110flEb OOMbMbfl E55 ■ P H I N MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS T ^ ^ 3 -O S NPN transistors for use in common-base, class-B, wideband amplifiers under CW conditions in military

RX1214

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor Microwave performance up to Tmb = 25 °C in a common-base class C

MX1011B200Y

Abstract: SC15 transistor list
Contextual Info: Philips Semiconductors Product specification Microwave power transistor MX1011B200Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, 10% duty factor Microwave performance up to T mb = 25 °C in a common base class C

RX1214B

Abstract: erie 1250-003
Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor RX1214B170W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor narrowband amplifier.

microwave transistor S- parameter

Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 us pulse width, duty factor 10% • Diffused emitter ballasting resistors improve ruggedness MFt 011B900Y QUICK REFERENCE DATA

atc100a101kp

Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK REFERENCE DATA