EQUIVALENT OF 1AM Search Results

LMBT3904LT1G

Abstract: equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

1AM marking transistor

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

marking code SOD

Abstract: schottky marking code A6
Contextual Info: Z2PK106 1Amp Low VF Schottky Barrier Diode 60V - Z2PAK OUTLINE DIMENSIONS FEATURES Case : Z2PAK Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability

Z1PK104

Contextual Info: Z1PK104 1Amp Low VF Schottky Barrier Diode 40V - Z1PAK OUTLINE DIMENSIONS FEATURES * Halogen-free type Unit : mm Case : Z1PAK * Compliance to RoHS product 0.05 Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF

SOD123 A10

Abstract: SOD-123 a10
Contextual Info: Z2PK110 1Amp Low VF Schottky Barrier Diode 100V - Z2PAK OUTLINE DIMENSIONS FEATURES * * * * * * Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability

z3pk1045

Abstract: zpak
Contextual Info: Z2PK115 1Amp Low VF Schottky Barrier Diode 150V - Z2PAK OUTLINE DIMENSIONS FEATURES Case : Z2PAK Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

transistor marking 1am

Contextual Info: TO SH IB A RN1412,RN1413 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN 1Am 17 1 3v r m g uRm N u -m 1u A•■ u m u 'm m Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. + 0.5 3.5-as ■ I 0.ÍÍ5

dp07dp

Abstract: LT100 1AM Y
Contextual Info: u im TECHNOLOGY _LTlO O l Precision O peration al Am plifier D C S C R IP TIO n FCRTURCS • Guaranteed L o w Offset Voltage T h e L T 1 0 0 1 significantly a d v a n c e s the s ta te -o f-th e - LT10 0 1AM 1 5|iV m ax LT1001C 60|iV m ax

GREENCONN

Abstract: GSEB263-30 EIA-364-13B SCSI-68 EIA-364-D 364D EIA-364-31 GSEB263 GSEB263-A02 31pin D connector
Contextual Info: REV. 02 LOCAS. DESCRIPTION & £ m # t B & 3 -p DATE i n « DRAWN 2 0 0 8 .8 .1 8 tf Specifications C urrent Rating: 1Amp Insulation Resistance: 1000M Min. D ielectric W ithstanding: 300VV\AC C o n ta ct Resistance: 20 m Max. O perating Temperature:-4CV\C to + 1 0 5 ‘ C

DIGITAL GATE EMULATOR USING 8085

Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
Contextual Info: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S

ul 94 v2

Contextual Info: TH I S DRAW I NG IS UNPUBLI S HE D. C O P Y RI G HT 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION R 1G H T S 20 LOC RE V I S I ONS D I ST RESERVED. LTR DESCR I PTION E C R - 0 9 - 0 I I 60 I AU 3.25 . 1 OF A 24.26 c /2\ 0.76 •^3- /3\

HSMS-0002

Abstract: HSMS-0003 5082-0024 5082-0087 5082-2713 5082-0097
Contextual Info: HÉULETT-PACKARDn C MP N T S HEWLETT PACKARD 5 OE D 4H475A4 SCHOTTKY BARRIER CHIPS FOR HYBRID INTEGRATED CIRCUITS OOOSSTf l 5082-0009 5082-0013 5082-0023 5082-0024 5082-0029 5082-0041 5082-0087 5082-0097 S 5082-9891 HS MS-0001 HSMS-0011 HSMS-0002 HSMS-0012

Contextual Info: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x

Contextual Info: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x

Contextual Info: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x

tle20741

Abstract: TLE2071 TLE2071ACD TLE2071AID TLE2071AMFK TLE2071AMJG TLE2071CD TLE2071ID TLE2071MFK TLE2426
Contextual Info: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x

Contextual Info: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x

Contextual Info: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x

Contextual Info: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x

TLE20741

Contextual Info: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x

Contextual Info: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x

Contextual Info: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x

Contextual Info: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x