ER 157 Search Results

XENPAK

Abstract: XENPAK DATA SHEET XENPAK-10GB-ER-AS XENPAK-10GB-ER
Contextual Info: XENPAK-10GB-ER-AS DATA SHEET 10GBASE-ER XENPAK Transceiver, 1550nm, SC Connectors, 40km over Single-Mode Fiber XENPAK-10GB-ER-AS Overview Agilestar's XENPAK-10GB-ER-AS 10GBd XENPAK optical transceiver is designed for Storage, IP network and LAN. It is a hot

10GBASE-E

Abstract: avalanche photodiode 1550nm sensitivity 10G PIN photodiode 10G avalanche photodiode
Contextual Info: 10G-XNPK-ER-AS DATA SHEET 10GBASE-ER XENPAK Transceiver, 1550nm, SC Connectors, 40km over Single-Mode Fiber 10G-XNPK-ER-AS Overview Agilestar's 10G-XNPK-ER-AS XENPAK optical transceiver is designed for Storage, IP network and LAN. It is a hot pluggable module in the Z-direction that is mainly usable in typical router/switch line card applications. The 10G-XNPK-ER-AS is a

10GBASE-ER

Abstract: XENPAK-10GB-ER
Contextual Info: 10GBASE-ER-AS DATA SHEET 10GBASE-ER XENPAK Transceiver, 1550nm, SC Connectors, 40km over Single-Mode Fiber XENPAK-10GB-ER Overview Agilestar's 10GBASE-ER-AS 10GBd XENPAK optical transceiver is designed for Storage, IP network and LAN. It is a hot pluggable module in the Z-direction that is mainly usable in typical router/switch line card applications. The 10GBASE-ER-AS is a

10Gb

Abstract: photodetector 1550nm pin 10gb photodiode 1550nm 10gb
Contextual Info: X2-10GB-ER-AS DATA SHEET 10GBASE-ER X2 Transceiver, 1550nm, SC Connectors, 40km over Single-Mode Fiber. X2-10GB-ER-AS Overview Agilestar's X2-10GB-ER-AS 10GBd X2 optical transceivers are designed for St orage, IP network and LAN, it is a hot pluggable module in

Contextual Info: DATA SHEET 10GBASE-ER XENPAK Transceiver, 1550nm, SC Connectors, 40km over Single-Mode Fiber SMC10GXEN-ER-AS Overview Agilestar's SMC10GXEN-ER-AS 10GBd XENPAK optical transceiver is designed for Storage, IP network and LAN. It is a hot pluggable module in the Z-direction that is mainly usable in typical router/switch line card applications. The SMC10GXEN-ER-AS is a

240950

Abstract: Intel487 SX intel overDrive SS1203 NTE cross a2jc
Contextual Info: in te l INTEL486 FAMILY OF MICROPROCESSORS LOW POWER VERSION DATABOOK Low Pow er Intel486™ SX C P U /ln te l4 8 7 TM SX MCP Low Pow er Intel486 DX CPU • Low er P ow er Dissipation — Dynamic Frequency Scalability ■ — Icc m ax Reduced to 1 5 0 mA a t 2 MHz

RSN 312 H 24

Abstract: LM 2545 2222 035 56101 ty 2553
Contextual Info: Aluminum Electrolytic Capacitors Power, Snap-in, Long Life, Standard PUM-SI-157 PSM-SI-056 PUL-SI-159 P ow er Ultra M iniature Snap-In P ow er Standard M iniature Snap-In P o w er Ultra Long Life Snap-In U s e f u l life 2500 h/85 C 12 000 h/85 C 2 500 h/105 C

2N5915

Abstract: 2N5914 VK20009-3B VK200093B ta7409 rca 632 rca power transistor 14-150 pf 424 VK200-093B C3097
Contextual Info: File No. 424 rotBÆ Solid State RF Pow er Transisto rs Division 2N5914 2N5915 H ig h -P o w er Silicon N -P -N O verlay Transistors 12.E>-Volt, High-Pow er T yp es F o r Class-C A m p lifie rs in

XENPAK

Abstract: XENPAK-10GB-ER
Contextual Info: DATA SHEET XENPAK-10GB-ER+-AS Overview Agilestar's XENPAK-10GB-ER+-AS XENPAK optical transceiver is designed for Storage, IP network and LAN. It is a hot pluggable module in the Z-direction that is mainly usable in typical router/switch line card applications. The XENPAK-10GB-ER+-AS is a

Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT501OJ VR soov44a o.-iooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT20M22JVR 200V 97A 0.022Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: APT10M07JVR A d van ced P o w er Te c h n o l o g y 100V 225A 0.007Q POWER MOS V‘ Pow er M OS V® is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: ER Cores ER 9,5 For compact transformers, preferably SMDs » Magnetic characteristics pei set If/A !t Ae - 1,58 13,3 8,41 120 i ! i l l / : \ W mm' mm mm' mm-1 -i \ Approx. weight 0,6 g/set n j £ Í . ER 9,5 cores Dimension .0“ Typ A. B 65 523 Mate­

Contextual Info: K FM RF2128P MICRO DEVICES MEDIUM POW ER LINEAR AM PLIFIER Typ ical A p plications • PCS Communication Systems • Commercial and Consum er Systems • 2.5G H z ISM Band Applications • Portable Battery Powered Equipment Product D escription r The R F2128P is a m edium -pow er, high-efficiency, linear

APT5012JNU2

Abstract: tl3060 rrmk 1
Contextual Info: A dvanced P o w er Te c h n o l o g y APT5012JNU2 500V 43A 0.12Í2 ISOTOP® PO W ER MOS IV N -C H A N N E L ENHANCEM ENT M ODE HIGH VOLTAGE POW ER M OSFETS MAXIMUM RATINGS Symbol V D SS All Ratings: T c = 25°C unless otherwise specified. Parameter UNIT

Contextual Info: • r R M ADVANCED A P T 10 0 5 0 J V R po w er Te c h n o l o g y 1000v i9a o.sooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

pv0402p

Abstract: 1002 ringer
Contextual Info: International IOR Rectifier Data Sheet No. 1.036C PV0402P Microelectronic HEXFET POW ER M O SFET PHOTOVOLTAIC RELAY P o w er ic Relay Single Pole, Normally Open + Ring Detector 0-400V, 120mA AC/DC General Description

Contextual Info: ¥ LM ▼ J^ r !n n M W W f W" PI74FCT157T/257T 25Q Series PI74FCT2157T/2257T Fast CMOS Quad 2-Input Multiplexer Product Features: • • Product Description: P I7 4 F C T 157/257/2157/2257T is pin com patible with bipolar FAST Series at a higher speed and low er pow er

I282

Contextual Info: SO LD ER SUFFIX CUSTO M ER TERMINAL RoH S L E A D P b -F R E E — LF3 Sn 1 00% Yes Yes .055 REF. [1.40] 00 1 .205 MAX. [5.20] UAV .276 MAX [7.00] LOT CODE & DATE CODE SOLDER SUFFIX INDICATES INDUCTANCE VALUE .157 [4.00] .098(2) [2.50] AREA REPRESENTS TERMINAL PAD DIMENSIONS

Contextual Info: • R A dvanced W .\A APT5010JVFR pow er Te c h n o lo g y " 500v POWER MOS V 44a 0.1 o o q FREDFET P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect,

8030J

Contextual Info: A P T 8030J V F R • R A dvanced W *Æ POW ER Te c h n o lo g y soov 2sa 0.300Q POWER MOS V FREDFET Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,

apt50m85jvr

Contextual Info: • R ADVANCED APT50M85JVR W /Æ P o w e r Techno lo g y soov soa o.ossq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

CPVS-ER11-1S-12P

Abstract: transistor 12p smd CBW095 12p smd ER11 3C92 3C96 CPVS-ER11-1S-10P
Contextual Info: FERROXCUBE DATA SHEET ER11/2.5/6 Planar ER cores and accessories Supersedes data of February 2002 2004 Sep 01 Ferroxcube Planar ER cores and accessories ER11/2.5/6 CORE SETS Effective core parameters SYMBOL PARAMETER handbook, halfpage VALUE UNIT Σ I/A core factor (C1)

Contextual Info: M ITEL DCR1375SBA Phase Control Thyristor SEMICONDUCTOR Supersedes Septem ber 1997 version, DS4654 - 2.2 DS4654 - 2.3 APPLICATIONS • High V oltage Pow er C onverters. ■ High V oltage Pow er Supplies. ■ M otor C ontrol. March 1998 KEY PARAMETERS V DRM